公开(公告)号：US20180355465A1

公开(公告)日：2018-12-13

申请号：US15781242

申请日：2016-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Toshiki HINATA ,  Kazuya DOBASHI ,  Kyoko IKEDA ,  Shuji MORIYA

IPC: C23C14/02 ,  C23C16/02 ,  H01L21/304 ,  C23C14/56 ,  C23C14/50 ,  H01L21/687 ,  H01L21/02

CPC classification number: C23C14/022 ,  C23C14/02 ,  C23C14/505 ,  C23C14/564 ,  C23C16/02 ,  H01L21/02041 ,  H01L21/302 ,  H01L21/304 ,  H01L21/68714

Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.

公开(公告)号：US20190006207A1

公开(公告)日：2019-01-03

申请号：US16114743

申请日：2018-08-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu AMIKURA ,  Toshiki HINATA

IPC: H01L21/67 ,  H01J37/32 ,  C23C16/44 ,  C23C16/455

Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.

公开(公告)号：US20160189987A1

公开(公告)日：2016-06-30

申请号：US14971708

申请日：2015-12-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Manabu AMIKURA ,  Toshiki HINATA

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  C23C16/4404 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/45587 ,  H01J37/32449 ,  H01J2237/0268 ,  H01J2237/16 ,  H01L21/67017 ,  H01L21/6719

Abstract: A substrate processing apparatus includes a processing container configured to air-tightly accommodate substrates, a plurality of mounting stands configured to mount the substrates, a process gas supply part configured to supply a process gas to the mounting stands, an exhaust mechanism configured to evacuate an interior of the processing container, a partition wall configured to independently surround the mounting stands with a gap left between the partition wall and each of the mounting stands, and cylindrical inner walls configured to independently surround the mounting stands with a gap left between each of the inner walls and each of the mounting stands. Slits are formed in the inner walls. The process gas in the processing spaces is exhausted via the slits. The inner walls include partition plates for bypassing the process gas so that the process gas does not directly flow into the slits.

Abstract translation: 一种基板处理装置，包括：配置为气密地容纳基板的处理容器;被配置为安装基板的多个安装支架;配置成向所述安装台供给处理气体的处理气体供给部;排气机构， 处理容器的内部，分隔壁，被配置为独立地围绕安装台，间隔留在分隔壁和每个安装台之间，并且圆筒形内壁被构造成独立地围绕安装台，其间留有间隙 内壁和每个安装架。 狭缝形成在内壁上。 处理空间中的处理气体经由狭缝排出。 内壁包括用于旁路工艺气体的隔板，使得工艺气体不直接流入狭缝。

公开(公告)号：US20180369881A1

公开(公告)日：2018-12-27

申请号：US15779894

申请日：2016-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Toshiki HINATA ,  Kazuya DOBASHI ,  Kyoko IKEDA ,  Shuji MORIYA

IPC: B08B9/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: B08B9/00 ,  B08B5/02 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45563 ,  C23C16/45589 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/68764

Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).