公开(公告)号：US20200278084A1

公开(公告)日：2020-09-03

申请号：US16803467

申请日：2020-02-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Naohiro FURUYA ,  Shinichi KAWAGUCHI

IPC: F17C7/00 ,  F17C13/04

Abstract: There is provide a gas supply method including: preparing a gas container filled with an easy-to-liquefy gas; and supplying the easy-to-liquefy gas from the gas container to a processing container in which a substrate process is performed using the easy-to-liquefy gas, via a gas supply path, wherein a pressure and a temperature of the easy-to-liquefy gas are controlled such that in the gas supply path, the pressure of the easy-to-liquefy gas decreases in a step-by-step manner and the temperature of the easy-to-liquefy gas increases from the gas container toward the processing container.

公开(公告)号：US20180369881A1

公开(公告)日：2018-12-27

申请号：US15779894

申请日：2016-10-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Toshiki HINATA ,  Kazuya DOBASHI ,  Kyoko IKEDA ,  Shuji MORIYA

IPC: B08B9/00 ,  H01L21/67 ,  H01L21/687 ,  H01L21/02

CPC classification number: B08B9/00 ,  B08B5/02 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45563 ,  C23C16/45589 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/68764

Abstract: According to the present invention, a substrate processing apparatus has a chamber (1), a stage (4) for holding a substrate (W) to be processed in the chamber (1), and a nozzle part (13) from which a gas cluster is blasted onto the substrate (W) to be processed, and has a function for processing the substrate (W) to be processed by the gas cluster. Cleaning of the inside of the chamber (1) is performed by: placing a prescribed reflecting member (dW, 60) in the chamber (1), blasting a gas cluster (C) onto the reflecting member (dW, 60), and applying the gas-cluster flow reflected by the reflecting member (dW, 60) onto a wall section of the chamber (1) to remove particles (P) adhered to the wall section of the chamber (1).

公开(公告)号：US20220143655A1

公开(公告)日：2022-05-12

申请号：US17585274

申请日：2022-01-26

Applicant: TOKYO ELECTRON LIMITED ,  IWATANI CORPORATION

Inventor： Kazuya DOBASHI ,  Takehiko ORII ,  Yukimasa SAITO ,  Kunihiko KOIKE ,  Takehiko SENOO ,  Koichi IZUMI ,  Yu YOSHINO ,  Tadashi SHOJO ,  Keita KANEHIRA

IPC: B08B5/02 ,  B08B7/00 ,  H01L21/67

Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

公开(公告)号：US20140373783A1

公开(公告)日：2014-12-25

申请号：US14484598

申请日：2014-09-12

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ikuo SAWADA ,  Masato MORISHIMA ,  Yukimasa SAITO

IPC: C23C16/513

CPC classification number: C23C16/513 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/50 ,  C23C16/509 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32568 ,  H01L31/1824 ,  Y02E10/545 ,  Y02P70/521

Abstract: A film forming device forms a thin film on a substrate by reacting reaction gases in a process vessel. Electrode portions each oriented vertically are arranged to be spaced from each other in a horizontal direction. By applying high-frequency powers having different phases to adjacent electrode portions, a strong plasma generation space is formed above the substrate placed on a mounting table, while a weak plasma generation space is formed in the gap between the electrode portions and the substrate. A first reaction gas is supplied to the strong plasma generation space and a second reaction gas that forms the thin film by reacting with the active species of the first reaction gas is supplied to the weak plasma generation space. The reaction gases in the weak plasma generation space are discharged through exhaust channels.

Abstract translation: 成膜装置通过使处理容器中的反应气体反应而在基板上形成薄膜。 垂直取向的电极部分在水平方向上彼此间隔开。 通过对相邻电极部分施加具有不同相位的高频电力，在放置在安装台上的基板的上方形成强等离子体产生空间，同时在电极部分和基板之间的间隙中形成微弱的等离子体产生空间。 将第一反应气体供应到强等离子体产生空间，并且通过与第一反应气体的活性物质反应形成薄膜的第二反应气体被供给到弱等离子体产生空间。 弱等离子体产生空间中的反应气体通过排气通道排出。

公开(公告)号：US20210107041A1

公开(公告)日：2021-04-15

申请号：US16496714

申请日：2018-02-09

Applicant: TOKYO ELECTRON LIMITED ,  IWATANI CORPORATION

Inventor： Kazuya DOBASHI ,  Takehiko ORII ,  Yukimasa SAITO ,  Kunihiko KOIKE ,  Takehiko SENOO ,  Koichi IZUMI ,  Yu YOSHINO ,  Tadashi SHOJO ,  Keita KANEHIRA

IPC: B08B5/02 ,  H01L21/67 ,  B08B7/00

Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.

公开(公告)号：US20180355465A1

公开(公告)日：2018-12-13

申请号：US15781242

申请日：2016-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yukimasa SAITO ,  Toshiki HINATA ,  Kazuya DOBASHI ,  Kyoko IKEDA ,  Shuji MORIYA

IPC: C23C14/02 ,  C23C16/02 ,  H01L21/304 ,  C23C14/56 ,  C23C14/50 ,  H01L21/687 ,  H01L21/02

CPC classification number: C23C14/022 ,  C23C14/02 ,  C23C14/505 ,  C23C14/564 ,  C23C16/02 ,  H01L21/02041 ,  H01L21/302 ,  H01L21/304 ,  H01L21/68714

Abstract: A substrate cleaning apparatus that cleans a processing target substrate by blasting the gas clusters to the processing target substrate. The apparatus includes: a chamber configured to accommodate the processing target substrate; a rotary stage configured to rotatably support the processing target substrate in the chamber; an blasting unit configured to blast the gas clusters to the processing target substrate supported by the rotary stage; a driving unit configured to scan a gas cluster-blasted position on the processing target substrate; an exhaust port configured to evacuate the chamber; and a control mechanism configured to control a scattering direction of particles by controlling a rotation direction of the processing target substrate by the rotary stage and a scanning direction of the gas cluster-blasted position, thereby suppressing re-adhesion of the particles to the processing target substrate.