公开(公告)号：US20230326724A1

公开(公告)日：2023-10-12

申请号：US18209030

申请日：2023-06-13

Applicant: Tokyo Electron Limited

Inventor： Yusuke HAYASAKA ,  Shuhei YAMABE ,  Naoki TAMARU ,  Keisuke YOSHIMURA ,  Kyo TSUBOI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32522 ,  H01J37/32715 ,  H01J37/32743 ,  H01L21/67069 ,  H01J37/32834 ,  H01J37/32495 ,  H01J2237/334 ,  H01J2237/002

Abstract: A plasma processing apparatus is for performing plasma processing in a depressurizable inner space. The apparatus includes a chamber having therein an inner space, a supporting table provided in the inner space and configured to support a substrate to be mounted thereon, one or more first members included in the chamber or separate from the chamber and partially exposed to a depressurized environment including the inner space, and one or more second members included in the chamber or separate from the chamber, each being in contact with a corresponding one of said one or more first members, and partially disposed in an atmospheric pressure environment. The apparatus further includes one or more feeders each of which is configured to supply a coolant to a cavity formed in a corresponding one of said one or more second members.

公开(公告)号：US20220384154A1

公开(公告)日：2022-12-01

申请号：US17804027

申请日：2022-05-25

Applicant: Tokyo Electron Limited

Inventor： Yusuke HAYASAKA ,  Atsushi SASAKI ,  Kazuya MATSUMOTO ,  Shingo TAKAHASHI ,  Koichi NAGAMI

IPC: H01J37/32

Abstract: In a disclosed plasma processing apparatus, an electrostatic chuck provided in a chamber includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region including a second electrode provided therein. A first feed line connects the first electrode and a bias power supply generating a pulse of a voltage applied to the first electrode to each other. A second feed line connects the second electrode and the bias power supply or another bias power supply generating a pulse of the voltage applied to the second electrode to each other. The second feed line includes one or more sockets and one or more feed pins. The one or more feed pins have flexibility in a radial direction thereof and are fitted into the one or more sockets.

公开(公告)号：US20210272779A1

公开(公告)日：2021-09-02

申请号：US17272771

申请日：2019-08-23

Applicant: Tokyo Electron Limited

Inventor： Yusuke HAYASAKA ,  Takehiro TANIKAWA ,  Shuhei YAMABE ,  Yuki MACHIDA ,  Jun Young CHUNG

IPC: H01J37/32

Abstract: A plasma processing apparatus according to an exemplary embodiment includes a chamber, a member, and a heater. Plasma is generated in an internal space of the chamber. The member is partially located in the internal space of the chamber. The heater is configured to heat the member. The member extends outward from the internal space of the chamber and is exposed to a space outside the chamber.

公开(公告)号：US20150114564A1

公开(公告)日：2015-04-30

申请号：US14527464

申请日：2014-10-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshinori KITABATA ,  Yusuke HAYASAKA ,  Kazuya MATSUMOTO

IPC: H01L21/677 ,  H01L21/67

Abstract: In a substrate processing apparatus of the present disclosure, a bearing member includes a decaying mechanism provided with a connecting shaft inserted therein and configured to decay radicals or ions; a first member configured to cover the decaying mechanism; and a second member disposed at the connecting shaft and provided with the connecting shaft inserted therein while being in contact with a sealing member. Further, an end of the first member and an end of the second member are connected to be engaged with each other, an invasion path is formed to allow the radicals to invade from the connected portion of the end of the first member and the end of the second member, and the invasion path is formed to be folded back in an extending direction of the connecting shaft. The sealing member is made of a material having a tensile strength larger than 12.1 MPa.

Abstract translation: 在本公开的基板处理装置中，轴承部件包括设置有插入其中的连接轴的衰减机构，其构造为使自由基或离子衰变; 构造成覆盖衰减机构的第一构件; 以及第二构件，其设置在连接轴处并且设置有与密封构件接触的插入其中的连接轴。 此外，第一构件的端部和第二构件的端部被连接以彼此接合，形成侵入路径以允许自由基从第一构件的端部的连接部分入侵，并且第二构件的端部 第二构件和侵入路径形成为在连接轴的延伸方向上折回。 密封构件由拉伸强度大于12.1MPa的材料制成。