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公开(公告)号：US20150137103A1
公开(公告)日：2015-05-21
申请号：US14566755
申请日：2014-12-11
Inventor： Hideo Hosono , Yoshitake TODA , Setsuro ITO , Satoru WATANABE , Naomichi MIYAKAWA , Kazuhiro ITO , Toshinari WATANABE
CPC classification number: H01L51/5012 , H01B1/08 , H01L51/5072 , H01L51/5092 , H01L51/56
Abstract: A light emitting device including an organic electroluminescence element is provided. The light emitting device may be a display device or a lighting device. The organic electroluminescence element includes an anode, a light emitting layer, and a cathode that are arranged in this order. An electron injection layer is arranged between the light emitting layer and the cathode. The electron injection layer is made of an amorphous C12A7 electride.
Abstract translation: 提供了包括有机电致发光元件的发光器件。 发光装置可以是显示装置或照明装置。 有机电致发光元件包括依次布置的阳极，发光层和阴极。 在发光层和阴极之间配置电子注入层。 电子注入层由无定形C12A7电极制成。
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公开(公告)号：US20170186984A1
公开(公告)日：2017-06-29
申请号：US15460455
申请日：2017-03-16
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY , TOKYO INSTITUTE OF TECHNOLOGY , Asahi Glass Company, Limited
Inventor： Hideo HOSONO , Yoshitake TODA , Satoru WATANABE , Toshinari WATANABE , Kazuhiro ITO , Naomichi MIYAKAWA , Nobuhiro NAKAMURA
IPC: H01L51/42 , H01L31/032 , H01J37/34 , C23C14/08 , C23C14/34
CPC classification number: H01L51/4233 , C23C14/08 , C23C14/086 , C23C14/3407 , C23C14/3414 , C23C14/352 , H01J37/3429 , H01L31/0324 , H01L51/5072 , H01L51/5092 , H01L51/5096 , H01L2031/0344 , H01L2251/303 , H01L2251/306 , Y02E10/549 , Y02P70/521
Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.
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3.发明申请C12A7 ELECTRIDE THIN FILM FABRICATION METHOD AND C12A7 ELECTRIDE THIN FILM 审中-公开C12A7电镀薄膜制造方法和C12A7电镀薄膜公开(公告)号：US20150093583A1
公开(公告)日：2015-04-02
申请号：US14567047
申请日：2014-12-11
Inventor： Hideo HOSONO , Yoshitake TODA , Katsuro HAYASHI , Setsuro ITO , Satoru WATANABE , Naomichi MIYAKAWA , Toshinari WATANABE , Kazuhiro ITO
CPC classification number: H01B1/08 , C04B35/44 , C04B35/62645 , C04B2235/3208 , C04B2235/664 , C23C14/08 , C23C14/082 , C23C14/3414 , C23C14/35 , H01L51/5221
Abstract: A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm−3 to 2.3×1021 cm−3.
Abstract translation: C12A7电极薄膜制造方法包括使用由具有电子密度的结晶C12A7电极制成的靶，在氧分压小于0.1Pa的气氛下通过气相沉积在基板上形成无定形C12A7电极薄膜的步骤 在2.0×1018cm-3至2.3×1021cm-3的范围内。
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公开(公告)号：US20170186989A1
公开(公告)日：2017-06-29
申请号：US15460426
申请日：2017-03-16
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY , TOKYO INSTITUTE OF TECHNOLOGY , Asahi Glass Company, Limited
Inventor： Hideo HOSONO , Yoshitake TODA , Nobuhiro NAKAMURA , Naomichi MIYAKAWA , Satoru WATANABE , Toshinari WATANABE
CPC classification number: H01L51/5092 , H01L27/3244 , H01L27/3276 , H01L27/3281 , H01L51/0096 , H01L51/5012 , H01L51/5048 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5203 , H01L51/56 , H01L2251/5392 , H01L2251/558 , H05B33/06 , H05B33/26
Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 kΩ to 100 MΩ.
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5.发明申请PRODUCTION METHOD OF ELECTROCONDUCTIVE MAYENITE COMPOUND HAVING HIGH ELECTRON DENSITY, AND TARGET 有权具有高电子密度的电极性MAYENITE化合物的生产方法和目标公开(公告)号：US20150136593A1
公开(公告)日：2015-05-21
申请号：US14567478
申请日：2014-12-11
Applicant: ASAHI GLASS COMPANY, LIMITED
Inventor： Kazuhiro ITO , Satoru WATANABE , Toshinari WATANABE , Naomichi MIYAKAWA
IPC: H01J37/34
CPC classification number: H01J37/3426 , C01F7/164 , C01P2006/40 , C01P2006/80 , C04B35/44 , C04B35/6261 , C04B35/6455 , C04B37/021 , C04B2235/3208 , C04B2235/3217 , C04B2235/442 , C04B2235/444 , C04B2235/445 , C04B2235/5436 , C04B2235/6562 , C04B2235/6565 , C04B2235/6567 , C04B2235/6581 , C04B2235/6587 , C04B2235/664 , C04B2235/77 , C04B2237/343 , C04B2237/402 , C04B2237/50 , C23C14/3414 , H01B1/08
Abstract: A production method of an electroconductive mayenite compound having an electron density greater than or equal to 5×1020 cm−3 includes preparing an object of processing containing a mayenite compound or a precursor of a mayenite compound, placing aluminum foil on at least part of a surface of the object of processing, and retaining the object of processing at temperatures falling within the range of 1080° C. to 1450° C. in a low oxygen partial pressure atmosphere.
Abstract translation: 具有大于或等于5×1020cm -3的电子密度的导电钙铝石化合物的制造方法包括制备包含钙铝石化合物或钙铝石化合物的前体的加工对象，将铝箔放置在至少一部分 处理对象的表面，并且在低氧分压气氛中将处理对象保持在1080℃至1450℃的范围内的温度。
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Patent Agency Ranking
6.发明申请SPUTTERING TARGET AND METHOD OF PRODUCING THIN FILM BY USING SPUTTERING TARGET 审中-公开溅射目标和使用溅射目标制造薄膜的方法公开(公告)号：US20160111263A1
公开(公告)日：2016-04-21
申请号：US14978946
申请日：2015-12-22
Applicant: Asahi Glass Company, Limited
Inventor： Kazuhiro ITO , Satoru WATANABE , Naomichi MIYAKAWA , Toshinari WATANABE , Akira MITSUI
CPC classification number: H01J37/3426 , C04B35/44 , C04B35/6261 , C04B2235/3201 , C04B2235/3208 , C04B2235/3244 , C04B2235/3272 , C04B2235/422 , C04B2235/5436 , C04B2235/5445 , C04B2235/76 , C04B2235/96 , C23C14/08 , C23C14/081 , C23C14/3407 , C23C14/3414 , H01J37/3423
Abstract: There is provided a sputtering target for forming an amorphous film, the sputtering target including an electrically conductive mayenite compound, wherein electron density of the electrically conductive mayenite compound is greater than or equal to 3×1020 cm−3, and wherein the electrically conductive mayenite compound includes one or more elements that are selected from a group including C, Fe, Na, and Zr.
Abstract translation: 提供了一种用于形成非晶膜的溅射靶，溅射靶包括导电的钙铝石化合物，其中导电的钙铝石化合物的电子密度大于或等于3×1020cm-3，并且其中导电的钙铝石 化合物包括一种或多种选自包括C，Fe，Na和Zr的组分。
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7.发明申请METHOD OF MANUFACTURING ELECTRICALLY CONDUCTIVE MAYENITE COMPOUND WITH HIGH ELECTRON DENSITY 有权制造具有高电子密度的电导电化合物的方法公开(公告)号：US20150184281A1
公开(公告)日：2015-07-02
申请号：US14659851
申请日：2015-03-17
Applicant: Asahi Glass Company, Limited
Inventor： Kazuhiro ITO , Satoru WATANABE , Toshinari WATANABE , Naomichi MIYAKAWA
IPC: C23C14/34 , C04B35/117
CPC classification number: C23C14/3414 , C01F7/002 , C01F7/164 , C01P2004/61 , C01P2006/40 , C04B35/117 , C04B35/44 , C04B2235/3208 , C04B2235/445 , C04B2235/6587 , C04B2235/664
Abstract: A method of manufacturing an electrically conductive mayenite compound, includes (a) preparing a body to be processed, the body to be processed including a mayenite compound or a precursor of a mayenite compound; and (b) performing a heat treatment on the body to be processed under a reducing atmosphere including an aluminum compound and carbon monoxide (CO) gas within a range of 1080° C. to 1450° C., the aluminum compound being a compound that emits aluminum oxide gas during the heat treatment on the body to be processed.
Abstract translation: 一种制造导电性钙铝石化合物的方法包括（a）制备待加工体，所述被加工物包括钙铝石化合物或钙铝石化合物的前体; 和（b）在包含铝化合物和一氧化碳（CO））气体的还原气氛下，在1080℃至1450℃的范围内对被处理体进行热处理，所述铝化合物为 在被加工物体的热处理过程中发出氧化铝气体。
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公开(公告)号：US20170186990A1
公开(公告)日：2017-06-29
申请号：US15459278
申请日：2017-03-15
Applicant: Asahi Glass Company, Limited
Inventor： Nobuhiro NAKAMURA , Naomichi MIYAKAWA , Satoru WATANABE , Toshinari WATANABE
IPC: H01L51/52
CPC classification number: H01L51/5203 , H01L51/5092 , H01L51/5268 , H01L2251/5392
Abstract: A light-emitting device having a light-extraction structure includes: a first electrode; a second electrode; a light-emitting layer disposed between the first electrode and the second electrode; and an inorganic-material-based layer disposed between the first electrode and the light-emitting layer or between the second electrode and the light-emitting layer. The inorganic-material-based layer has thickness of 100 nm or more and has conductivity of 10−6 Ω−1cm−1 or more and 100 Ω−1cm−1 or less.
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9.发明申请公开(公告)号：US20180374959A1
公开(公告)日：2018-12-27
申请号：US16117761
申请日：2018-08-30
Applicant: TOKYO INSTITUTE OF TECHNOLOGY , AGC Inc.
Inventor： Hideo HOSONO , Toshio KAMIYA , Hideya KUMOMI , Junghwan KIM , Nobuhiro NAKAMURA , Satoru WATANABE , Naomichi MIYAKAWA
IPC: H01L29/786 , H01L29/417 , H01L29/423 , H01L23/532 , H01L23/31
Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
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公开(公告)号：US20190058142A1
公开(公告)日：2019-02-21
申请号：US16169078
申请日：2018-10-24
Inventor： Hideo HOSONO , Yoshitake TODA , Satoru WATANABE , Toshinari WATANABE , Kazuhiro ITO , Naomichi MIYAKAWA , Nobuhiro NAKAMURA
IPC: H01L51/42 , H01L31/032 , C23C14/08 , C23C14/34 , C23C14/35 , H01J37/34 , H01L51/50 , H01L31/0256
Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.
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