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公开(公告)号：US20170186989A1
公开(公告)日：2017-06-29
申请号：US15460426
申请日：2017-03-16
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY , TOKYO INSTITUTE OF TECHNOLOGY , Asahi Glass Company, Limited
Inventor： Hideo HOSONO , Yoshitake TODA , Nobuhiro NAKAMURA , Naomichi MIYAKAWA , Satoru WATANABE , Toshinari WATANABE
CPC classification number: H01L51/5092 , H01L27/3244 , H01L27/3276 , H01L27/3281 , H01L51/0096 , H01L51/5012 , H01L51/5048 , H01L51/5056 , H01L51/5072 , H01L51/5088 , H01L51/5203 , H01L51/56 , H01L2251/5392 , H01L2251/558 , H05B33/06 , H05B33/26
Abstract: A light-emitting device includes a pair of first electrodes arranged separated from and opposing each other on a first surface of a substrate; a light-emitting layer arranged on at least one of the first electrodes; a second electrode arranged on the light-emitting layer; and a bridge layer connecting the first electrodes. The bridge layer is formed of a material having a resistance that falls within a range of 100 kΩ to 100 MΩ.
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公开(公告)号：US20170186984A1
公开(公告)日：2017-06-29
申请号：US15460455
申请日：2017-03-16
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY , TOKYO INSTITUTE OF TECHNOLOGY , Asahi Glass Company, Limited
Inventor： Hideo HOSONO , Yoshitake TODA , Satoru WATANABE , Toshinari WATANABE , Kazuhiro ITO , Naomichi MIYAKAWA , Nobuhiro NAKAMURA
IPC: H01L51/42 , H01L31/032 , H01J37/34 , C23C14/08 , C23C14/34
CPC classification number: H01L51/4233 , C23C14/08 , C23C14/086 , C23C14/3407 , C23C14/3414 , C23C14/352 , H01J37/3429 , H01L31/0324 , H01L51/5072 , H01L51/5092 , H01L51/5096 , H01L2031/0344 , H01L2251/303 , H01L2251/306 , Y02E10/549 , Y02P70/521
Abstract: A thin film of metal oxide includes zinc (Zn); tin (Sn); silicon (Si); and oxygen (O). In terms of oxide, based on 100 mol % of total of oxides of the thin film, SnO2 is greater than 15 mol % but less than or equal to 95 mol %.
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3.发明申请C12A7 ELECTRIDE THIN FILM FABRICATION METHOD AND C12A7 ELECTRIDE THIN FILM 审中-公开C12A7电镀薄膜制造方法和C12A7电镀薄膜公开(公告)号：US20150093583A1
公开(公告)日：2015-04-02
申请号：US14567047
申请日：2014-12-11
Inventor： Hideo HOSONO , Yoshitake TODA , Katsuro HAYASHI , Setsuro ITO , Satoru WATANABE , Naomichi MIYAKAWA , Toshinari WATANABE , Kazuhiro ITO
CPC classification number: H01B1/08 , C04B35/44 , C04B35/62645 , C04B2235/3208 , C04B2235/664 , C23C14/08 , C23C14/082 , C23C14/3414 , C23C14/35 , H01L51/5221
Abstract: A C12A7 electride thin film fabrication method includes a step of forming an amorphous C12A7 electride thin film on a substrate by vapor deposition under an atmosphere with an oxygen partial pressure of less than 0.1 Pa using a target made of a crystalline C12A7 electride having an electron density within a range of 2.0×1018 cm−3 to 2.3×1021 cm−3.
Abstract translation: C12A7电极薄膜制造方法包括使用由具有电子密度的结晶C12A7电极制成的靶，在氧分压小于0.1Pa的气氛下通过气相沉积在基板上形成无定形C12A7电极薄膜的步骤 在2.0×1018cm-3至2.3×1021cm-3的范围内。
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4.发明申请公开(公告)号：US20180257061A1
公开(公告)日：2018-09-13
申请号：US15760072
申请日：2016-09-15
Inventor： Hideo HOSONO , Toshiharu YOKOYAMA , Masaaki KITANO , Hiroshi MIZOGUCHI , Takaya OGAWA
CPC classification number: B01J23/63 , B01J35/023 , B01J37/0081 , C01C1/0411 , C22C5/04 , Y02P20/52
Abstract: The invention provides a Laves phase intermetallic compound having a composition represented by general formula ARu2 (A is Y, Sc, or at least one element selected from lanthanoid elements excluding Ce), the crystallite size thereof being 1 nm to 100 nm; a catalyst including the intermetallic compound as an active ingredient; and a method for producing ammonia using the same.
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5.发明申请公开(公告)号：US20200287002A1
公开(公告)日：2020-09-10
申请号：US16878937
申请日：2020-05-20
Applicant: AGC Inc. , TOKYO INSTITUTE OF TECHNOLOGY
Inventor： Hideo HOSONO , Junghwan Kim , Joonho Bang , Hideya Kumomi , Satoru Watanabe , Kazuto Ohkoshi , Naomichi Miyakawa , Nao Ishibashi , Kunio Masumo , Nobuhiro Nakamura
Abstract: An oxide-based semiconductor compound including metal cations and oxygen, wherein hydride ions H− originally bonded with the metal cations have been replaced with fluorine ions F− and at least one of the fluorine ions F− is bonded with one to three of the metal cations.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20200164348A1
公开(公告)日：2020-05-28
申请号：US16630269
申请日：2018-07-12
Inventor： Hideo HOSONO , Yutong GONG , Jlazhen WU , Masaaki KITANO , Toshiharu YOKOYAMA , Yangfan LU , Tiannan YE
Abstract: Provided are an intermetallic compound having high stability and high activity, and a catalyst using the same. A hydrogen storage/release material containing an intermetallic compound represented by formula (1): RTX . . . (1) wherein R represents a lanthanoid element, T represents a transition metal in period 4 or period 5 in the periodic table, and X represents Si, Al or Ge.
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公开(公告)号：US20200078771A1
公开(公告)日：2020-03-12
申请号：US16492975
申请日：2018-03-16
Inventor： Hideo HOSONO , Kazuhisa KISHIDA , Masaaki KITANO , Toshiharu YOKOYAMA
IPC: B01J23/75 , B01J23/745 , C01C1/04 , B01J23/46 , B01J35/10 , B01J23/755 , C01B3/04
Abstract: Provided are a supported metal material showing high catalytic activity, a supported metal catalyst, a method of producing ammonia and a method of producing hydrogen using the supported metal catalyst, and a method of producing a cyanamide compound. The supported metal material of the present invention is a supported metal material in which a transition metal is supported on a support, and the support is a cyanamide compound represented by the following general formula (1); MCN2 (1), wherein M represents a group II element of the periodic table, and the specific surface area of the cyanamide compound is 1 m2g−1 or more.
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公开(公告)号：US20220143580A1
公开(公告)日：2022-05-12
申请号：US17433491
申请日：2020-02-26
Applicant: Tsubame BHB Co., Ltd. , Tokyo Institute of Technology
Inventor： Yasunori INOUE , Munenobu ITO , Kazuhisa KISHIDA , Hideo HOSONO , Masaaki KITANO , Toshiharu YOKOYAMA
Abstract: A molded sintered body containing a mayenite type compound, an inorganic binder sintered material, and a transition metal, wherein a content of the inorganic binder sintered material is 3 to 30 parts by mass with respect to 100 parts by mass of the molded sintered body, and the molded sintered body has at least one pore peak in each of a pore diameter range of 2.5 to 20 nm and a pore diameter range of 20 to 350 nm. A method for producing the molded sintered body, including mixing a precursor of a mayenite type compound and a raw material of an inorganic binder sintered material to prepare a mixture; molding the mixture to prepare a molded body of the mixture; firing the molded body to prepare a fired product; and supporting a transition metal on the fired product to produce a molded sintered body.
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公开(公告)号：US20220126276A1
公开(公告)日：2022-04-28
申请号：US17506751
申请日：2021-10-21
Applicant: TOKYO INSTITUTE OF TECHNOLOGY
Inventor： Michikazu HARA , Hideo HOSONO , Masashi HATTORI
Abstract: The invention provides a catalyst for ammonia synthesis which has a high ammonia synthesis activity even at a low reaction temperature and a low reaction pressure and shows no decrease in the catalytic activity even when the synthesis reaction is repeated. The catalyst for ammonia synthesis comprises a metal supported material containing a transition metal and a support for supporting the transition metal. The support contains a metal hydride represented by XHn and an F ion. In the formula, X represents at least one kind selected from the group consisting of atoms of Group 2 and Group 3 of the periodic table, and lanthanoid atoms; and n represents a number represented by 2≤n≤3.
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10.发明申请公开(公告)号：US20180374959A1
公开(公告)日：2018-12-27
申请号：US16117761
申请日：2018-08-30
Applicant: TOKYO INSTITUTE OF TECHNOLOGY , AGC Inc.
Inventor： Hideo HOSONO , Toshio KAMIYA , Hideya KUMOMI , Junghwan KIM , Nobuhiro NAKAMURA , Satoru WATANABE , Naomichi MIYAKAWA
IPC: H01L29/786 , H01L29/417 , H01L29/423 , H01L23/532 , H01L23/31
Abstract: An oxide semiconductor compound includes gallium; and oxygen. An optical band gap is 3.4 eV or more. An electron Hall mobility obtained by performing a Hall measurement at a temperature of 300 K is 3 cm2/Vs or more.
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