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    GAS BARRIER FILM
    2.
    发明申请
    GAS BARRIER FILM 审中-公开
    气体阻隔膜

    公开(公告)号：US20150291753A1

    公开(公告)日：2015-10-15

    申请号：US14354022

    申请日：2012-09-28

    Applicant: TORAY INDUSTRIES, INC.

    Inventor： Yusuke Tsukamura ,  Hiroyuki Uebayashi ,  Minoru Yoshida ,  Motoyuki Suzuki

    IPC: C08J7/04 ,  C23C14/08 ,  C23C14/10

    CPC classification number: C08J7/045 ,  B65D65/40 ,  C08F220/14 ,  C08F230/08 ,  C08F259/08 ,  C08F265/06 ,  C08F290/068 ,  C08J2367/02 ,  C08J2433/00 ,  C08J2433/10 ,  C08J2433/12 ,  C08J2433/16 ,  C08J2443/04 ,  C08L33/066 ,  C23C14/0629 ,  C23C14/081 ,  C23C14/086 ,  C23C14/10 ,  C23C14/3457 ,  C23C16/40 ,  C23C16/50 ,  C08F220/20 ,  C08F220/06 ,  C08F2220/1875 ,  C08F220/18

    Abstract: [Problem] The purpose of the present invention is to provide a gas barrier film having high gas barrier performance and excellent repeated reproducibility of gas barrier performance. [Solution] A gas barrier film comprising a polymer base, an undercoat layer that contains, as the main component, an acrylic resin having at least one side chain selected from the group consisting of the side chains (I) to (III) mentioned below, and an inorganic layer, wherein the undercoat layer and the inorganic layer are arranged in this order on at least one surface of the polymer base in such a manner that the undercoat layer and the inorganic layer are in contact with each other: (I) a side chain having an acrylic polymer skeleton; (II) a side chain having a dimethylsioxane skeleton; and (III) a side chain having a skeleton containing a fluorine atom.

    Abstract translation: 本发明的目的在于提供阻气性高的阻气性和阻气性的重复再现性优异的阻气膜。 [解决方案]一种阻气膜，其包含聚合物基材，底涂层，其含有选自下述侧链（I）至（III）的至少一种侧链作为主要成分的丙烯酸树脂） 和无机层，其中所述底涂层和无机层以这样的顺序排列在所述聚合物基材的至少一个表面上，使得所述底涂层和所述无机层彼此接触：（I） 具有丙烯酸类聚合物骨架的侧链; （II）具有二甲基甲硅烷骨架的侧链; 和（III）具有含有氟原子的骨架的侧链。

    GAS BARRIER FILM
    3.
    发明申请
    GAS BARRIER FILM 审中-公开
    气体阻隔膜

    公开(公告)号：US20150337139A1

    公开(公告)日：2015-11-26

    申请号：US14759829

    申请日：2013-12-25

    Applicant: TORAY INDUSTRIES, INC.

    Inventor： Kentaro Mori ,  Hiroyuki Uebayashi

    IPC: C09D1/00 ,  C23C14/08

    Abstract: The gas barrier film includes a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] and the silicon compound layer [B] being in contact with each other.

    Abstract translation: 阻气膜包括具有无机层[A]和硅化合物层[B]的聚合物基底，该聚合物基底依次层叠在聚合物基材的至少一面上，含有锌化合物和氧化硅的无机层[A] ，含有氮氧化硅的硅化合物层[B]和无机层[A]和硅化合物层[B]彼此接触。

    Gas barrier film
    4.
    发明授权
    Gas barrier film 有权

    公开(公告)号：US10829643B2

    公开(公告)日：2020-11-10

    申请号：US14759829

    申请日：2013-12-25

    Applicant: Toray Industries, Inc.

    Inventor： Kentaro Mori ,  Hiroyuki Uebayashi

    IPC: C09D1/00 ,  C23C14/08 ,  C08J7/04 ,  H01L51/52

    Abstract: The gas barrier film includes a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] and the silicon compound layer [B] being in contact with each other.

    GAS BARRIER FILM AND METHOD FOR PRODUCING SAME
    5.
    发明申请
    GAS BARRIER FILM AND METHOD FOR PRODUCING SAME 审中-公开
    气体阻隔膜及其制造方法

    公开(公告)号：US20160076134A1

    公开(公告)日：2016-03-17

    申请号：US14781158

    申请日：2014-03-28

    Applicant: TORAY INDUSTRIES, INC.

    Inventor： Kodai Tokunaga ,  Hiroyuki Uebayashi ,  Hikaru Satake ,  Motoyuki Suzuki

    IPC: C23C14/08 ,  C23C14/34 ,  C23C14/10

    CPC classification number: C23C14/08 ,  B32B9/00 ,  B32B2307/412 ,  B32B2307/7244 ,  B32B2439/70 ,  C23C14/0021 ,  C23C14/10 ,  C23C14/3414 ,  C23C14/562

    Abstract: A gas barrier film is provided including a polymer film substrate and a gas barrier layer containing at least zinc oxide and silicon dioxide on at least one surface of the polymer film substrate, wherein the gas barrier layer satisfies at least one of the following [I] to [III]: [I] with regard to X-ray absorption near edge structure (XANES) spectrum at K absorption edge of zinc, the value of (spectrum intensity at 9664.0 eV)/(spectrum intensity at 9668.0 eV) is in the range of 0.910 to 1.000; [II] the value obtained by dividing atomic concentration of zinc with atomic concentration of silicon is in the range of 0.1 to 1.5, and structural density index represented by the following equation: structural density index={density of the gas barrier layer obtained by X-ray reflectometry (XRR)}/{(theoretical density calculated from compositional ratio determined by X-ray photoelectron spectroscopy (XPS)} is 1.20 to 1.40; and [III] when peak in the wave number range of 900 to 1,100 cm−1 measured in FT-IR measurement is subjected to peak separation into the wave number of 920 cm−1 and the wave number of 1,080 cm−1, the value of ratio (A/B) of integrated intensity of the spectrum having its peak at 920 cm−1 (A) to integrated intensity of the spectrum having its peak at 1,080 cm−1 (B) is at least 1.0 and up to 7.0.

    Abstract translation: 提供了一种阻气膜，其包括聚合物膜基材和在聚合物膜基材的至少一个表面上至少含有氧化锌和二氧化硅的气体阻隔层，其中阻气层满足以下[I]中的至少一个， 至[III]：[I]关于锌吸收边缘的X射线吸收近边缘结构（XANES）光谱，（9664.0eV的光谱强度）/（9668.0eV的光谱强度）的值在 范围为0.910〜1.000; [II]将原子浓度除以硅的原子浓度得到的值在0.1〜1.5的范围内，结构密度指数由下式表示：结构密度指数= {由X获得的阻气层的密度 射线反射计（XRR）} / {（（由X射线光电子能谱（XPS）确定的组成比算出的理论密度）为1.20〜1.40; [III]当峰值范围为900〜1100cm -1 在FT-IR测量中测量的峰值分离为920cm -1的波数和1,080cm -1的波数，其峰值在920的峰值的积分强度的比（A / B）值 cm -1（A）与其在1080c -1（B）峰值的光谱的积分强度为1.0以上7.0以下。

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