Abstract:
The present invention provides an alkali-soluble resin with which a cured film having high extensibility, reduced stress, high adhesion to a metal, and high heat resistance can be obtained, and a photosensitive resin composition containing the alkali-soluble resin, and the present invention is an alkali-soluble resin (A) including a structure represented by a general formula (1) wherein X1 represents a divalent organic group having 2 to 100 carbon atoms, Y1 and Y2 each represent a divalent to hexavalent organic group having 2 to 100 carbon atoms, X2 represents a tetravalent organic group having 2 to 100 carbon atoms, p and q each represent an integer in a range of 0 to 4, and n1 and n2 each represent an integer in a range of 5 to 100,000, wherein (I) and (II) described below are satisfied: (I) an organic group having an aliphatic chain having 8 to 30 carbon atoms is contained as X1 of the general formula (1) at a content of 30 to 70 mol % based on 100 mol % of a total of X1 and X2, and (II) an organic group having a diphenyl ether structure is contained as Y1 of the general formula (1) at a content of 1 to 30 mol % based on 100 mol % of a total of Y1 and Y2.
Abstract:
The present invention provides a polyimide solution which does not require a ring-closing process at a high temperature for obtaining a heat-resistant polyimide non-woven fabric and which is hardly affected by atmosphere humidity in fiber production by electrospinning, so that a fiber with a stable diameter can be obtained in any circumstance.A polyimide solution including: (a) a resin containing 50 mol % or more, based on the total amount of the resin, of a structural unit represented by the general formula (1); and (b) a solvent.
Abstract:
The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol % of the (A1) residue and 0.01-60 mol % of the (B1) residue.
Abstract:
The present invention provides a polyimide precursor that serves to produce a cured film that has high light permeability in combination with low birefringence and low linear thermal expansion. The polyimide precursor includes at least an acid dianhydride residue as represented by Formula (1), a diamine residue as represented by Formula (2), and one or more diamine residues as represented by Formula (3), the acid dianhydride residue as represented by Formula (1) accounting for 50 mol % or more of the total quantity of acid dianhydride residues in the polyimide precursor, the diamine residue as represented by Formula (2) accounting for 50 mol % or more of the total quantity of diamine residues in the polyimide precursor, and the diamine residue as represented by Formula (3) accounting for 15 mol % or less of the total quantity of diamine residues in the polyimide precursor.
Abstract:
The invention aims to provide polyamic acid that can form a varnish with a low viscosity and serves to produce, through curing, coat film with good mechanical characteristics and further aims to produce cured coat film with good mechanical characteristics regardless of whether the molar concentration of the acid anhydride group in the acid dianhydride monomer and that of the amino group in the multivalent amine compound or diamine compound are identical to or different from each other. This objective is met by polyamic acid including a structure as represented by chemical formula (1) given below: (In chemical formula (1), δ represents an oxygen or sulfur atom and W represents an electron-withdrawing group, and R11 and R12 represent independently a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms.
Abstract:
A polyamic acid useful for forming a protective or insulative layer for semiconductor elements has a structure represented by chemical formula (1): wherein δ represents an oxygen or sulfur atom; W represents an electron-withdrawing group; and R11 and R12 represent independently a hydrogen atom or a hydrocarbon group having 1 to 10 carbon atoms.
Abstract:
A polyimide resin includes an acid anhydride residue; and a diamine residue, the polyimide resin including a residue of a polysiloxane diamine represented by Formula (1) in an amount of not less than 60% by mole in the total amount of the diamine residue: wherein, n is a natural number and an average value thereof calculated from the average molecular weight of the polysiloxane diamine is 45 to 200; R1 and R2, the same or different, each represent an alkylene group having 1 to 30 carbon atoms or a phenylene group; and R3 to R6, the same of different, each represent an alkyl group having 1 to 30 carbon atoms, a phenyl group or a phenoxy group.
Abstract translation:其中n为自然数,其平均值由聚硅氧烷二胺的平均分子量计算为45〜200; R 1和R 2相同或不同,分别表示碳原子数1〜30的亚烷基或亚苯基。 R 3〜R 6相同,各自表示碳原子数1〜30的烷基,苯基或苯氧基。
Abstract:
An object is to provide a polyamic acid resin composition that can form a varnish with a low viscosity and serves to produce, through curing, coat film with good mechanical characteristics. Another object is to provide a polyamic acid resin composition in which the acid anhydride terminal group is low in reactivity with diamine and which can give a varnish that does not suffer significant precipitation of diamine. These objects can be met by a polyamic acid resin composition that contains: (a) polyamic acid and (b) a compound as represented by chemical formula (1). (In Chemical formula (1), Z is a di- or higher-valent organic group containing 2 or more carbon atoms, V is a structure as represented by chemical formula (2), and k is an integer of 2 or more.) (In In Chemical formula (2), δ represents oxygen or sulfur atom and W represents an electron-withdrawing group, and R11 and R12 represent independently a hydrogen atom or a hydrocarbon group containing 1 to 10 carbon atoms.
Abstract:
The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol % of the (A1) residue and 0.01-60 mol % of the (B1) residue.
Abstract:
The present invention provides a temporary-bonding adhesive having excellent heat resistance, whereby a semiconductor circuit formation substrate and a support substrate can be bonded by a single type of adhesive layer, the adhesive force thereof does not change over the course of steps for manufacturing a semiconductor device or the like, and the adhesive can subsequently be easily de-bonded at room temperature under mild conditions; and a method for manufacturing a semiconductor device using the temporary-bonding adhesive. The present invention includes a temporary-bonding adhesive wherein a polyimide copolymer having at least an acid dianhydride residue and a diamine residue, the diamine residue including both of (A1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 1 to 15, and (B1) a polysiloxane-based diamine residue represented by a general formula (1) in which n is a natural number from 16 to 100, the polyimide copolymer containing 40-99.99 mol % of the (A1) residue and 0.01-60 mol % of the (B1) residue.