公开(公告)号：US20200261278A1

公开(公告)日：2020-08-20

申请号：US16645683

申请日：2018-08-29

Applicant: TORAY INDUSTRIES, INC.

Inventor： Shota KAWAI ,  Yoshihiro KARIYA ,  Junji WAKITA ,  Seiichiro MURASE

IPC: A61F13/42 ,  H04B1/3827 ,  H01Q1/27 ,  G01N27/04

Abstract: The present invention provides a wireless communication device including: a circuit unit; and an antenna which is connected to the circuit unit and which transmits and receives signals to and from a transceiver in a non-contact manner. The wireless communication device transmits different signals to the transceiver, depending on the presence or absence of contact between at least a part of the circuit unit and moisture.

公开(公告)号：US20200321399A1

公开(公告)日：2020-10-08

申请号：US16303873

申请日：2017-05-29

Applicant: TORAY INDUSTRIES, INC.

Inventor： Shota KAWAI ,  Seiichiro MURASE ,  Hiroji SHIMIZU

IPC: H01L27/28 ,  G06K19/077 ,  H01L51/00 ,  H01L51/10

Abstract: A memory array includes: a plurality of first wires; at least one second wire crossing the first wires; and a plurality of memory elements provided in correspondence with respective intersections of the first wires and the at least one second wire and each having a first electrode and a second electrode arranged spaced apart from each other, a third electrode connected to one of the at least one second wire, and an insulating layer that electrically insulates the first electrode and the second electrode and the third electrode from each other, the first wires, the at least one second wire, and the first wires, the at least one second wire, and the memory elements being formed on a substrate.

公开(公告)号：US20180327530A1

公开(公告)日：2018-11-15

申请号：US15774936

申请日：2016-11-21

Applicant: TORAY INDUSTRIES, INC.

Inventor： Junji WAKITA ,  Hiroji SHIMIZU ,  Shota KAWAI ,  Seiichiro MURASE

IPC: C08F220/14 ,  H01L51/00 ,  C08F220/32 ,  C08G18/71 ,  C08G18/34 ,  C08F212/08 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  H01L27/28 ,  H01L51/05 ,  G06K19/077

CPC classification number: C08F220/14 ,  C08F212/08 ,  C08F220/32 ,  C08F2220/1841 ,  C08F2220/325 ,  C08F2800/20 ,  C08G18/34 ,  C08G18/71 ,  G03F7/004 ,  G03F7/038 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/322 ,  G03F7/40 ,  G06K19/07773 ,  H01B1/22 ,  H01B5/16 ,  H01L21/288 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/1159 ,  H01L27/28 ,  H01L27/283 ,  H01L29/786 ,  H01L51/004 ,  H01L51/0043 ,  H01L51/0048 ,  H01L51/05 ,  H01L51/0558

Abstract: An object of the present invention is to provide a ferroelectric memory element which has a low driving voltage and which can be formed by coating. The present invention provides a ferroelectric memory element including at least: a first conductive film; a second conductive film; and a ferroelectric layer provided between the first conductive film and the second conductive film; wherein the ferroelectric layer contains ferroelectric particles and an organic component, and wherein the ferroelectric particles have an average particle size of from 30 to 500 nm.