公开(公告)号：US20150050778A1

公开(公告)日：2015-02-19

申请号：US14383494

申请日：2013-02-20

Applicant: TORAY Industries, Inc.

Inventor： Noboru Asahi ,  Toshihisa Nonaka ,  Shoichi Niizeki

IPC: H01L23/00 ,  B32B37/00 ,  B32B38/00 ,  H01L25/065

CPC classification number: H01L24/83 ,  B32B37/0046 ,  B32B38/004 ,  B32B2307/202 ,  B32B2311/00 ,  B32B2457/14 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16238 ,  H01L2224/27003 ,  H01L2224/2732 ,  H01L2224/27334 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/75252 ,  H01L2224/75253 ,  H01L2224/753 ,  H01L2224/75314 ,  H01L2224/75315 ,  H01L2224/75317 ,  H01L2224/7532 ,  H01L2224/81005 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81191 ,  H01L2224/81203 ,  H01L2224/81815 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83862 ,  H01L2224/9211 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2224/16225 ,  H01L2924/00012 ,  H01L2224/27 ,  H01L2924/01047 ,  H01L2224/16145 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/014 ,  H01L2224/05552

Abstract: Disclosed is a method for producing a semiconductor device in which solder joints are made between a semiconductor chip with bumps and a substrate with electrodes corresponding to the bumps through a thermosetting adhesive layer, the method including the successive steps of: (A) forming a thermosetting adhesive layer in advance on a surface including bumps of the semiconductor chip; (B) laying a surface on the thermosetting adhesive layer side of the semiconductor chip, on which the thermosetting adhesive layer is formed, and a substrate one upon another, followed by pre-bonding using a heat tool to obtain a pre-bonded laminate; and (C) interposing a protective film having a thermal conductivity of 100 W/mK or more between the heat tool and a surface on the semiconductor chip side of the pre-bonded laminate, melting a solder between the semiconductor chips and the substrate and simultaneously curing the thermosetting adhesive layer using the heat tool. There is provided a method and an apparatus for producing a semiconductor device, which is capable of making a satisfactory joint without causing catching of a resin of an adhesive film between bumps and electrode pads.

Abstract translation: 公开了一种制造半导体器件的方法，其中在具有凸块的半导体芯片和具有通过热固性粘合剂层对应于凸块的电极的基板之间形成焊点，该方法包括以下连续步骤：（A）形成热固性 粘合剂层预先在包含半导体芯片的凸块的表面上; （B）在其上形成有热固性粘合剂层的半导体芯片的热固性粘合层一侧和另一个基板上放置表面，然后使用热工具进行预接合以获得预结合的层压体; 和（C）在热工具与预接合层叠体的半导体芯片侧的表面之间插入热导率为100W / mK以上的保护膜，使半导体芯片和基板之间的焊料熔融 使用热工具固化热固性粘合剂层。 提供了一种用于制造半导体器件的方法和装置，其能够在不引起突起和电极焊盘之间的粘合剂膜的树脂的捕获的情况下形成令人满意的接合。