公开(公告)号：US20200294567A1

公开(公告)日：2020-09-17

申请号：US16568123

申请日：2019-09-11

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tadaaki OIKAWA ,  Young Min EEH ,  Kazuya SAWADA ,  Kenichi YOSHINO ,  Eiji KITAGAWA ,  Taiga ISODA

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer having an invariable magnetization direction; a non-magnetic layer provided on the first magnetic layer; a second magnetic layer provided on the non-magnetic layer, having an invariable magnetization direction, and containing a rare-earth element; a third magnetic layer provided on the second magnetic layer and composed of cobalt; and an oxide layer provided on the third magnetic layer.

公开(公告)号：US20200075671A1

公开(公告)日：2020-03-05

申请号：US16678316

申请日：2019-11-08

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Jyunichi OZEKI ,  Masahiko NAKAYAMA ,  Hiroaki YODA ,  Eiji KITAGAWA ,  Takao OCHIAI ,  Minoru AMANO ,  Kenji NOMA

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic layer having a variable magnetization direction, and including a first main surface and a second main surface located opposite to the first main surface, a second magnetic layer provided on a first main surface side of the first magnetic layer, and having a fixed magnetization direction, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, wherein a saturation magnetization of a part of the first magnetic layer which is located close to the first main surface is higher than a saturation magnetization of a part of the first magnetic layer which is located close to the second main surface.

公开(公告)号：US20200302987A1

公开(公告)日：2020-09-24

申请号：US16566472

申请日：2019-09-10

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Kazuya SAWADA ,  Young Min EEH ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Eiji KITAGAWA ,  Taiga ISODA

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

Abstract: According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.

公开(公告)号：US20200082857A1

公开(公告)日：2020-03-12

申请号：US16352137

申请日：2019-03-13

Applicant: TOSHIBA MEMORY CORPORATION ,  SK HYNIX INC.

Inventor： Young Min EEH ,  Taeyoung LEE ,  Kazuya SAWADA ,  Eiji KITAGAWA ,  Taiga ISODA ,  Tadaaki OIKAWA ,  Kenichi YOSHINO

IPC: G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  H01F41/32 ,  H01F10/32

Abstract: According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.

公开(公告)号：US20190081235A1

公开(公告)日：2019-03-14

申请号：US15907907

申请日：2018-02-28

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Eiji KITAGAWA

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

Abstract: According to one embodiment, a semiconductor memory device includes a variable resistance element comprising a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer. The non-magnetic layer includes a para-electric layer on an upper surface of the first ferromagnetic layer, and a ferro-electric layer on an upper surface of the para-electric layer and on a lower surface of the second ferromagnetic layer.

公开(公告)号：US20200091410A1

公开(公告)日：2020-03-19

申请号：US16352279

申请日：2019-03-13

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Eiji KITAGAWA ,  Young Min EEH ,  Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Taiga ISODA

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32

Abstract: According to an embodiment, a storage device includes a resistance change element. The resistance change element includes a stacked structure including a first ferromagnet, a second ferromagnet, and a first nonmagnet between the first ferromagnet and the second ferromagnet. The first nonmagnet includes a boron-doped rare-earth oxide.

公开(公告)号：US20190173001A1

公开(公告)日：2019-06-06

申请号：US16209684

申请日：2018-12-04

Applicant: SK hynix Inc. ,  Toshiba Memory Corporation

Inventor： Tae-Young LEE ,  Jae-Hyoung LEE ,  Sung-Woong CHUNG ,  Eiji KITAGAWA

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12

Abstract: An electronic device may include a semiconductor memory, and the semiconductor memory may include a first magnetic layer; a second magnetic layer; and a spacer layer interposed between the first magnetic layer and the second magnetic layer, wherein the spacer layer includes a first layer, a second layer and an intermediate layer interposed between the first layer and the second layer, and wherein each of the first layer and the second layer includes an oxide, or a nitride, or a combination of an oxide and a nitride, the intermediate layer includes a multilayer structure including [Ru/x]n or [x/Ru]n, x includes a metal, an oxide, or a nitride, or a combination of a metal, an oxide and a nitride, and n represents an integer of 1 or greater.