公开(公告)号：US20180056482A1

公开(公告)日：2018-03-01

申请号：US15429542

申请日：2017-02-10

申请人： TOSHIBA MEMORY CORPORATION

发明人： Takahiko KAWASAKI ,  Yukiteru MATSUI ,  Akifumi GAWASE

IPC分类号： B24B53/017 ,  H01L21/306

CPC分类号： B24B53/017 ,  H01L21/30625

摘要： According to one embodiment, a dresser includes a base metal plate, and a plurality of chip portions that are provided on the base metal plate. Each chip portion includes a Si substrate having a projection at an upper portion thereof and a diamond layer provided on the projection of the Si substrate.

公开(公告)号：US20210260719A1

公开(公告)日：2021-08-26

申请号：US17319637

申请日：2021-05-13

申请人： TOSHIBA MEMORY CORPORATION

发明人： Takahiko KAWASAKI ,  Yukiteru MATSUI ,  Akifumi GAWASE

IPC分类号： B24B37/26 ,  B24B37/24 ,  B24B53/017 ,  H01L21/768 ,  H01L21/321 ,  H01L21/3105

摘要： A polishing pad is described. The polishing pad includes a surface having plural recess portions, and a substrate is polished by the surface. In the pad, an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 μm or less, and an average density of the recess portions at one area of the surface is 1,300/mm2 or more.

公开(公告)号：US20180277388A1

公开(公告)日：2018-09-27

申请号：US15992223

申请日：2018-05-30

申请人： Toshiba Memory Corporation

发明人： Yukiteru MATSUI ,  Kyoichi SUGURO ,  Akifumi GAWASE ,  Takahiko KAWASAKI

IPC分类号： H01L21/3115 ,  H01L21/3215 ,  H01L21/3105 ,  H01J37/317 ,  H01L21/321 ,  H01L21/306 ,  H01L21/304

CPC分类号： H01L21/31155 ,  B81C2201/0123 ,  B81C2201/0125 ,  H01J37/3171 ,  H01J2237/31711 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/32115 ,  H01L21/3212 ,  H01L21/3215

摘要： A manufacturing method of a semiconductor device according to an embodiment implants impurities into a central portion of a polishing target film or an outer peripheral portion of the central portion of the polishing target film to cause an impurity concentration in the outer peripheral portion of the polishing target film and an impurity concentration in the central portion thereof to be different from each other, thereby modifying a surface of the polishing target film. The modified surface of the polishing target film is polished by a CMP method.

公开(公告)号：US20190283206A1

公开(公告)日：2019-09-19

申请号：US16109665

申请日：2018-08-22

申请人： TOSHIBA MEMORY CORPORATION

发明人： Takahiko KAWASAKI ,  Yukiteru MATSUI ,  Akifumi GAWASE

IPC分类号： B24B37/26 ,  B24B37/24 ,  B24B53/017 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/321

摘要： A polishing pad is described. The polishing pad includes a surface having plural recess portions, and a substrate is polished by the surface. In the pad, an average width of the recess portions at one area of the surface in a direction parallel to the surface is 20 μm or less, and an average density of the recess portions at one area of the surface is 1,300/mm2 or more.