公开(公告)号：US20190071768A1

公开(公告)日：2019-03-07

申请号：US16078488

申请日：2017-02-20

申请人： TOSOH-CORPORATION

发明人： Ryo AKIIKE ,  Yuya TSUCHIDA ,  Hideto KURAMOCHI

IPC分类号： C23C14/34 ,  C23C14/08 ,  C23C14/35 ,  H01J37/34 ,  C03C17/245 ,  C04B35/01 ,  H01B1/08 ,  H01B13/00

摘要： Provided are an oxide sintered body that can produce a transparent conductive oxide film having low resistance and exhibiting lower light absorption characteristics in a wide wavelength range, and a transparent conductive oxide film.An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio Hf/(In+Hf+Ta) is 0.2 at % to 3.0 at %, and the atomic ratio Ta/(In+Hf+Ta) is 0.02 at % to 1.3 at %, is used.

公开(公告)号：US20230183844A1

公开(公告)日：2023-06-15

申请号：US17999050

申请日：2021-05-17

申请人： TOSOH CORPORATION

发明人： Ryo AKIIKE ,  Yoichiro KODA ,  Masami MESUDA

IPC分类号： C22C30/00 ,  C22C24/00 ,  H10N10/851 ,  C01B33/06

CPC分类号： C22C30/00 ,  C22C24/00 ,  H10N10/8556 ,  C01B33/06 ,  C22C2202/02 ,  C01P2006/40 ,  C01P2006/32 ,  C01P2002/60

摘要： A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.

公开(公告)号：US20220149258A1

公开(公告)日：2022-05-12

申请号：US17422953

申请日：2020-01-15

申请人： TOSOH CORPORATION

发明人： Yoichiro KODA ,  Ryo AKIIKE ,  Hideto KURAMOCHI

IPC分类号： H01L35/22 ,  C22C28/00 ,  C22C1/04

摘要： Provided is a silicide-based alloy material with which environmental load can be reduced and high thermoelectric conversion performance can be obtained.
Provided is a silicide-based alloy material including silicon and ruthenium as main components, in which when the contents of silicon and ruthenium are denoted by Si and Ru, respectively, the atomic ratio of the devices constituting the alloy material satisfies the following: 45 atm %≤Si/(Ru+Si)≤70 atm % 30 atm %≤Ru/(Ru+Si)≤55 atm %.

公开(公告)号：US20210002755A1

公开(公告)日：2021-01-07

申请号：US17031294

申请日：2020-09-24

申请人： TOSOH CORPORATION

发明人： Ryo AKIIKE ,  Yuya TSUCHIDA ,  Hideto KURAMOCHI

IPC分类号： C23C14/34 ,  C03C17/245 ,  C04B35/01 ,  H01B1/08 ,  C04B35/626 ,  H01L31/18 ,  H01B1/00 ,  C04B35/495 ,  C04B35/64 ,  H01L27/30 ,  H01L31/0224 ,  H01L31/0264 ,  C23C14/08 ,  C23C14/35 ,  H01B13/00 ,  H01J37/34

摘要： An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.