公开(公告)号：US20190071768A1

公开(公告)日：2019-03-07

申请号：US16078488

申请日：2017-02-20

Applicant: TOSOH-CORPORATION

Inventor： Ryo AKIIKE ,  Yuya TSUCHIDA ,  Hideto KURAMOCHI

IPC: C23C14/34 ,  C23C14/08 ,  C23C14/35 ,  H01J37/34 ,  C03C17/245 ,  C04B35/01 ,  H01B1/08 ,  H01B13/00

Abstract: Provided are an oxide sintered body that can produce a transparent conductive oxide film having low resistance and exhibiting lower light absorption characteristics in a wide wavelength range, and a transparent conductive oxide film.An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio Hf/(In+Hf+Ta) is 0.2 at % to 3.0 at %, and the atomic ratio Ta/(In+Hf+Ta) is 0.02 at % to 1.3 at %, is used.

公开(公告)号：US20210002755A1

公开(公告)日：2021-01-07

申请号：US17031294

申请日：2020-09-24

Applicant: TOSOH CORPORATION

Inventor： Ryo AKIIKE ,  Yuya TSUCHIDA ,  Hideto KURAMOCHI

IPC: C23C14/34 ,  C03C17/245 ,  C04B35/01 ,  H01B1/08 ,  C04B35/626 ,  H01L31/18 ,  H01B1/00 ,  C04B35/495 ,  C04B35/64 ,  H01L27/30 ,  H01L31/0224 ,  H01L31/0264 ,  C23C14/08 ,  C23C14/35 ,  H01B13/00 ,  H01J37/34

Abstract: An oxide sintered body containing indium, hafnium, tantalum, and oxygen as constituent elements, in which when indium, hafnium, and tantalum are designated as In, Hf, and Ta, respectively, the atomic ratio of Hf/(In+Hf+Ta) is equal to 0.002 to 0.030, and the atomic ratio of Ta/(In+Hf+Ta) is equal to 0.0002 to 0.013.

公开(公告)号：US20210380488A1

公开(公告)日：2021-12-09

申请号：US17283866

申请日：2019-10-07

Applicant: TOSOH CORPORATION

Inventor： Masami MESUDA ,  Hideto KURAMOCHI ,  Yuya TSUCHIDA

IPC: C04B35/58 ,  C23C14/34 ,  C04B35/626

Abstract: The object of the present invention is to provide a large-sized gallium nitride-based sintered body having a small oxygen amount and high strength, a large-sized gallium nitride-based sintered body having a small oxygen amount and containing a dopant, to obtain a highly crystalline gallium nitride thin film which has become a n-type or p-type semiconductor by a dopant, and methods for producing them.
A gallium nitride-based sintered body, which has an oxygen content of at most 1 atm % and an average particle size (D50) of at least 1 μm and at most 150 μm.

公开(公告)号：US20240158954A1

公开(公告)日：2024-05-16

申请号：US17772972

申请日：2020-10-27

Applicant: TOSOH CORPORATION ,  National Institute for Materials Science

Inventor： Yuya TSUCHIDA ,  Yuya SUEMOTO ,  Yoshihiro UEOKA ,  Masami MESUDA ,  Hideto KURAMOCHI ,  Takahiro NAGATA ,  Liwen SANG ,  Toyohiro CHIKYOW

IPC: C30B29/68 ,  C23C14/00 ,  C23C14/02 ,  C23C14/06 ,  C23C14/34 ,  C23C14/35 ,  C30B23/02 ,  C30B25/06 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L33/32 ,  H01S5/02

CPC classification number: C30B29/68 ,  C23C14/0036 ,  C23C14/021 ,  C23C14/0617 ,  C23C14/3407 ,  C23C14/35 ,  C30B23/025 ,  C30B25/06 ,  C30B25/186 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/32 ,  H01S5/021

Abstract: The present invention provides: a multilayer film structure which has high crystallinity and planarity; and a method for producing this multilayer film structure. This multilayer film structure is provided with: an Si (111) substrate; a first thin film that is arranged on the Si (111) substrate, while being formed of a nitride material and/or aluminum; and a second thin film that is arranged on the first thin film, while being formed of a nitride material. An amorphous layer having a thickness of 0 nm or more but less than 1.0 nm are present on the Si (111) substrate; and the full width at half maximum (FWHM) of a rocking curve of the (0002) plane at the surface of this multilayer film structure is 1.50° or less.

公开(公告)号：US20230212734A1

公开(公告)日：2023-07-06

申请号：US17996718

申请日：2021-04-19

Applicant: TOSOH CORPORATION

Inventor： Yuya TSUCHIDA ,  Masami MESUDA ,  Hiroyuki HARA ,  Osamu MATSUNAGA

IPC: C23C14/18 ,  C23C14/58 ,  C23C14/34 ,  B22D7/00

CPC classification number: C23C14/185 ,  C23C14/5853 ,  C23C14/3414 ,  B22D7/005 ,  H01J37/3491

Abstract: Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.
An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm2; and the yttrium ingot has a relative density of greater than or equal to 96%.