公开(公告)号：US09663541B2

公开(公告)日：2017-05-30

申请号：US14758142

申请日：2013-12-27

Applicant: TOSOH CORPORATION ,  Sagami Chemical Research Institute

Inventor： Sachio Asano ,  Tomoyuki Kinoshita ,  Yasushi Hara ,  Daiji Hara ,  Ryoji Tanaka ,  Ken-ichi Tada

IPC: H01B1/02 ,  H01B1/12 ,  C07F9/00 ,  H01L21/02 ,  C07C29/68 ,  C07C31/28 ,  C07C33/26

CPC classification number: C07F9/005 ,  C07C29/68 ,  C07C31/28 ,  C07C33/26 ,  C07F9/00 ,  H01L21/02118 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/02282 ,  H01L21/02318

Abstract: A compound useful for the manufacture of a Group 5 metal oxide film is provided. The compound is a Group 5 metal oxo-alkoxo complex represented by the following formula (A), and after preparing a film-forming material solution containing the compound and an organic solvent, a Group 5 metal oxide film can be manufactured using the film-forming material solution: Mα(μ4-O)β(μ3-O)γ(μ-O)δ(μ-ORA)∈(ORA)ζ(RAOH)ηXθYι  (A) (wherein M represents a niobium atom, etc.; RA represents an alkyl group; X represents an alkylenedioxy group; Y represents a carboxy group, etc.; α represents an integer of 3 to 10; β represents 0 or 1; γ represents an integer of 0 to 8; δ represents an integer of 2 to 9; ∈ represents an integer of 0 to 6; ζ represents an integer of 6 to 16; η represents an integer of 0 to 4; θ represents an integer of 0 to 2; and ι represents an integer of 0 to 6).

公开(公告)号：US10336782B2

公开(公告)日：2019-07-02

申请号：US16061049

申请日：2016-12-12

Applicant: TOSOH CORPORATION ,  SAGAMI CHEMICAL RESEARCH INSTITUTE

Inventor： Naoyuki Koiso ,  Yuki Yamamoto ,  Hiroyuki Oike ,  Teppei Hayakawa ,  Taishi Furukawa ,  Ken-ichi Tada

IPC: C07F15/06 ,  C07F17/00 ,  C07F17/02 ,  C07F19/00 ,  C23C16/18 ,  H01L21/02 ,  H01L21/28 ,  H01L29/45 ,  H01L29/49 ,  H01L21/285 ,  H01L21/768 ,  H01L23/532

Abstract: Provided is a cobalt complex which is useful for the production of a cobalt-containing thin film under conditions where no oxidizing gas is used. A cobalt complex represented by general formula (1) (wherein R1 represents a silyloxy group represented by general formula (2) (wherein R6, R7 and R8 independently represent an alkyl group having 1 to 6 carbon atoms); R2 represents a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or a silyloxy group represented by general formula (2); R3, R4 and R5 independently represent a hydrogen atom or an alkyl group having 1 to 6 carbon atoms; and L represents a diene having 4 to 10 carbon atoms) is used.

公开(公告)号：US11753429B2

公开(公告)日：2023-09-12

申请号：US17292819

申请日：2019-11-08

Applicant: TOSOH CORPORATION ,  SAGAMI CHEMICAL RESEARCH INSTITUTE

Inventor： Hiroyuki Oike ,  Teppei Hayakawa ,  Yuki Yamamoto ,  Taishi Furukawa ,  Ken-ichi Tada

IPC: C07F15/06 ,  C23C16/18

CPC classification number: C07F15/065 ,  C23C16/18

Abstract: To provide a cobalt complex which is liquid at room temperature, useful for producing a cobalt-containing thin film under conditions without using an oxidizing gas.
A cobalt complex represented by the following formula (1):




wherein L1 and L2 represent a unidentate amide ligand of the following formula (A), a bidentate amide ligand of the following formula (B) or a hetero atom-containing ligand of the following formula (C):





wherein R1 and R2 represent a C1-6 alkyl group or a tri(C1-6 alkyl)silyl group, and the wave line represents a binding site to the cobalt atom;





wherein R3 represents a tri(C1-6 alkyl)silyl group, R4 and R5 represent a C1-4 alkyl group, and X represents a C1-6 alkylene group;





wherein R6 and R8 represent a C1-6 alkyl group, R7 represents a hydrogen atom or a C1-4 alkyl group, Y represents an oxygen atom or NR9, Z represents an oxygen atom or NR10, and R9 and R10 independently represent a C1-6 alkyl group.