摘要:
The invention presents a switching control circuit for a primary-side-controlled power converter. A pattern generator produces a digital pattern to control a programmable capacitor that is connected to an oscillator, which produces frequency hopping to reduce the EMI. A voltage-waveform detector produces a voltage-feedback signal and a discharge-time signal by multi-sampling a voltage signal of a transformer. A current-waveform detector and an integrator generate a feedback signal. The integration of a current-waveform signal with a timing signal generates the average-current signal. Time constant of the integrator is correlated to the switching frequency. The oscillator generates the timing signal and a pulse signal in response to the output of a current-loop error amplifier. A PWM circuit generates the switching signal in response to the pulse signal and the output of a voltage-loop error amplifier for switching the switching device and regulating the output of the power converter.
摘要:
A voltage-waveform detector produces a voltage-feedback signal and a discharge-time signal by multi-sampling a voltage signal of a transformer. The discharge-time signal represents a discharge time of a secondary-side switching current. A voltage-loop error amplifier amplifies the voltage-feedback signal and generates a control signal. An off-time modulator correspondingly generates a discharge-current signal and a standby signal in response to the control signal and an under-voltage signal. The under-voltage signal indicates a low supply voltage of the controller. An oscillator produces a pulse signal in response to the discharge-current signal. The pulse signal determines the off-time of the switching signal. A PWM circuit generates the switching signal in response to the pulse signal and the standby signal. The standby signal further controls the off-time of the switching signal and maintains a minimum switching frequency. The switching signal is used for regulating the output of the power supply.
摘要:
The present invention discloses a switching control circuit for a primary-side controlled power converter. A voltage-waveform detector produces a voltage-feedback signal and a discharge-time signal. A current-waveform detector generates a current-waveform signal by measuring a primary-side switching current. An integrator generates a current-feedback signal by integrating the current-waveform signal with the discharge time. A time constant of the integrator is correlated with the switching frequency, thus the current-feedback signal is proportional to an output current of the power converter. A PWM circuit controls the pulse width of the switching signal in response to the outputs of a voltage-loop error amplifier and a current-loop error amplifier. The output voltage and the maximum output current of the power converter are therefore regulated.
摘要:
A close-loop PWM controller for a primary-side controlled power converter is provided. A voltage-waveform detector produces a voltage-feedback signal and a discharge-time signal. A current-waveform detector generates a current-waveform signal by measuring a primary-side switching current. An integrator generates a current-feedback signal by integrating the current-waveform signal with the discharge-time signal. A time constant of the integrator is correlated with a switching period of the switching signal, therefore the current-feedback signal is proportional to the output current of the power converter. The close-loop PWM controller further comprises a voltage-loop error amplifier and a current-loop error amplifier. A PWM circuit and comparators control the pulse width of the switching signal in response to the outputs of the voltage-loop error amplifier and the current-loop error amplifier. The output voltage and the maximum output current of the power converter are therefore regulated.
摘要:
A multiple-sampling circuit is proposed for measuring a voltage signal and a discharge time of a transformer. Sampling signals are used for generating hold voltages by alternately sampling the reflected voltage from the transformer. A buffer amplifier generates a buffer voltage from the higher voltage of hold voltages. A sampling switch periodically conducts the buffer voltage to produce a voltage-feedback signal. The voltage-feedback signal is proportional to an output voltage of the switching circuit. A threshold signal added to the reflected voltage signal produces a level-shift reflected signal. A discharge-time signal is generated as the switching signal is disabled. The discharge-time signal is disabled once the level-shift signal is lower than the voltage-feedback signal. The pulse width of the discharge-time signal is therefore correlated to the discharge time of the transformer. The sampling signals are enabled to generate hold voltages only when the discharge-time signal is enabled.
摘要:
An apparatus and method thereof for measuring an output current from a primary side of a power converter are provided. A peak detector is designed to sample a peak value of a converted voltage of a primary-side switching current. A zero-current detector detects a discharge-time of a secondary-side switching current through an auxiliary winding of a transformer. An oscillator generates a switching signal for switching the power converter. An integrator generates an integrated signal by integrating the converted voltage of the primary-side switching peak current with the discharge-time. The time constant of the integrator is correlated with the switching period of the switching signal. The integrated signal is thus proportional to the output current of the power converter.
摘要:
An electrostatic discharge (ESD) protection device with adjustable single-trigger or multi-trigger voltage is provided. The semiconductor structure has multi-stage protection semiconductor circuit finction and adjustable discharge capacity. The single-trigger or multi-trigger semiconductor structure may be fabricated by using the conventional semiconductor process, and can be applied to IC semiconductor design and to effectively protect the important semiconductor devices and to prevent the semiconductor devices from ESD damage. In particular, the present invention can meet the requirements of high power semiconductor device and has better protection function compared to conventional ESD protection circuit. In the present invention, a plurality of N-wells or P-wells connected in parallel are used to adjust the discharge capacity of various wells in the P-substrate so as to improve the ESD protection capability and meet different power standards.
摘要:
An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped region and a first P+ doped region, and a second distance is kept between a second P+ doped region and a third N+ doped region. In addition, the holding current of the ESD device can be set to a specific value by modulating the first distance and the second distance. The holding current is in inverse proportion to the first distance and the second distance.
摘要:
A high-voltage MOSFET having isolation structure is provided. An N-type MOSFET includes a first deep N-type well. A first P-type region is formed in the first deep N-type well to enclose a first source region and a first contact region. A first drain region is formed in the first deep N-type well. A P-type MOSFET includes a second deep N-type well. A second P-type region is formed in the second deep N-type well to enclose a second drain region. A second source region and a second contact region are formed in the second deep N-type well. A polysilicon gate oxidation layer is disposed above the thin gate oxidation layer and the thick field oxidation layer to control the current in the channel of the MOSFET. Separated P-type regions provide further isolation between MOSFETs. A first gap and a second gap increase the breakdown voltage of the high-voltage MOSFET.
摘要:
A high voltage LDMOS transistor according to the present invention includes at least one P-field block in the extended drain region of the N-well. The P-field blocks form junction-fields in the N-well for equalizing the capacitance of parasitic capacitors between the drain region and the source region and fully deplete the drift region before breakdown occurs. A higher breakdown voltage is therefore achieved and the N-well having a higher doping density is thus allowed. The source region and P-field blocks enclose the drain region, which makes the LDMOS transistor self-isolated.