摘要:
A 4-desoxy-4-epipodophyllotoxin derivative of the following formula ##STR1## wherein R and R.sub.1 are as defined in the specification or a pharmaceutically acceptable salt thereof as well as an antitumor composition comprising such derivative or salt as an active ingredient.
摘要:
A 4-desoxy-4-epipodophyllotoxin derivative of the following formula ##STR1## wherein R and R.sub.1 are as defined in the specification or a pharmaceutically acceptable salt thereof as well as an antitumor composition comprising such derivative or salt as an active ingredient.
摘要:
A 4-desoxy-4-epipodophyllotoxin derivative of the following formula ##STR1## wherein R and R.sub.1 are as defined in the specification or a pharmaceutically acceptable salt thereof as well as an antitumor composition comprising such derivative or salt as an active ingredient.
摘要:
The compounds of the invention are a 2'-deoxy-5-fluorouridine derivative represented by the formula ##STR1## wherein one of R.sub.1 and R.sub.2 is a hydrogen atom or a group easily hydrolyzable in vivo, the other is a benzyl group which may optionally have at least one halogen atom or trifluoromethyl group as a substituent on the phenyl ring, and R.sub.3 is a lower alkyl group, and a pharmaceutically acceptable salt thereof.The compounds of the invention can be suitably used as an antitumor agent.
摘要:
Only a wafer for QC check may be transferred and a production wafer may prevent from being transferred into an assigned process chamber whose QC check is not completed after a maintenance task, and the production wafer may be processed the assigned process chamber after the completion of the QC check. The wafer for QC check is transferred while inhibiting a transfer of the production wafer into the assigned process chamber, and the production wafer is transferred into each of the process chambers of the plurality except the assigned process chamber.
摘要:
Provided are negative-type photosensitive resin compositions which may be used as interlayer insulating layers on a silicon wafer. The compositions include a urea crosslinking agent together with an epoxy-containing material and vinylphenol resin. Also provided are methods of forming patterned insulating layers using such compositions. The resin compositions can be used in the manufacture of wafer-level chip-scale packages and LSIs, for example, as interlayer insulating layers.
摘要:
Provided are negative-type photosensitive resin compositions which may be used in forming interlayer insulating layers on a silicon wafer or printed wiring board. The compositions include a vinylphenol resin, a biphenyl-phenol resin and epoxy-containing materials. Also provided are methods of forming patterned dielectric films using such compositions. The resin compositions can be used in the manufacture of wafer-level chip-scale packages and LSIs, for example, as interlayer insulating layers.
摘要:
Cutting tools and wear-resistant materials formed of a silicon-nitride-based sintered body having excellent characteristics, such as high wear resistance. Cutting tool 1 is in the form of a negative chip having a shape prescribed by ISO standard: SNGN 120408. Specifically, the cutting tool 1 is a chip of a rectangular parallelepiped shape which has a thickness of 4.76 mm and in which each of four sides (cutting edges) 5 on a rake face 3 side has a length of 12.7 mm. In the region having a width of 0.2 mm or less and extending from the cutting edges 5 of the cutting tool 1, the cutting tool 1 has a microhardness H. Plast of 21.2 GPa or greater and a microhardness HU of 11.2 GPa or greater. The Vickers hardness of the cutting tool 1 as measured at a substantial center of the rake face 3 is 14.5 GPa or greater. Further, the amount of oxygen within the cutting tool 1 is 1.0 to 2.0 wt. %. Also disclosed is a method of quality control of an article having a surface, at least a portion of which is curved, which includes measuring one or both of microhardness H. Plast and microhardness HU in the vicinity of the curved portion of the surface, and either accepting or rejecting the article based on the measurement values.
摘要:
The invention relates to a process for preparing prilled bisphenol A by granulation which comprises adding compounds soluble in molten bisphenol A, not affecting adversely the melt color of bisphenol A to any significant extent, and have a melting point of 60.degree. C. or more to bisphenol A and granulating and also to a process which comprises adding the reaction mother liquor or cyrstallization mother liquor produced in the manufacturing step of bisphenol A to bisphenol A or the adduct of bispheol A and phenol or a mixture of bispheol A and phenol, removing the phenol, and granulating. The processes yield prilled bispheol A which have high strength and resist powdering.
摘要:
A burden distribution monitoring apparatus, according to the present invention, includes a hollow cylindrical sonde having an inner end radially movable within the internal space of a furnace, such as a shaft furnace. The sonde carries a burden layer depth sensor and/or a burden grain distribution sensor for radially shifting working ends of the sensors. With the foregoing construction, burden depth and/or grading of the burden can be monitored in a plurality of radial points in the furnace.