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    Vertical type semiconductor device producing apparatus
    7.
    发明申请
    Vertical type semiconductor device producing apparatus 有权
    垂直型半导体器件制造装置

    公开(公告)号：US20080250619A1

    公开(公告)日：2008-10-16

    申请号：US12155625

    申请日：2008-06-06

    申请人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    发明人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    IPC分类号： H01L21/67

    CPC分类号： C23C16/45523 ,  C23C16/345 ,  Y10T29/41

    摘要： A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

    摘要翻译： 通过向反应室提供衬底并依次重复以下步骤来制造半导体器件：将第一种气体供应到反应室中，从反应室排出第一种气体，向反应器中供应第二种气体 并从反应室排出第二种气体，以处理设置在反应室中的基板。 第一种气体预先保留在供应路径的中间部分，第一种气体通过该中间部分流动，并被供应到反应室中，反应室的排气基本停止。

    Method of producing a semiconductor device
    8.
    发明授权
    Method of producing a semiconductor device 有权
    半导体装置的制造方法

    公开(公告)号：US07622396B2

    公开(公告)日：2009-11-24

    申请号：US12155625

    申请日：2008-06-06

    申请人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    发明人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    IPC分类号： H01L21/31

    CPC分类号： C23C16/45523 ,  C23C16/345 ,  Y10T29/41

    摘要： A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

    摘要翻译： 通过向反应室提供衬底并依次重复以下步骤来制造半导体器件：将第一种气体供应到反应室中，从反应室排出第一种气体，向反应器中供应第二种气体 并从反应室排出第二种气体，以处理设置在反应室中的基板。 第一种气体预先保留在供应路径的中间部分，第一种气体通过该中间部分流动，并被供应到反应室中，反应室的排气基本停止。

    VERTICAL TYPE SEMICONDUCTOR DEVICE PRODUCING APPARATUS
    9.
    发明申请
    VERTICAL TYPE SEMICONDUCTOR DEVICE PRODUCING APPARATUS 审中-公开
    垂直型半导体器件生产设备

    公开(公告)号：US20110176967A1

    公开(公告)日：2011-07-21

    申请号：US13074835

    申请日：2011-03-29

    申请人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    发明人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    IPC分类号： B01J19/00

    CPC分类号： C23C16/45523 ,  C23C16/345

    摘要： A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.

    摘要翻译： 垂直型半导体器件制造装置包括：垂直型反应室，其容纳多个堆叠的基板; 排出反应室的排气路径，通过排气路排出反应室的真空排气装置; 用于打开和关闭排气通道的排气阀; 向反应室供给有助于成膜的第一种气体的第一供给路径; 将有助于成膜的第二种气体供给到反应室的第二供给路径; 分别打开和关闭第一和第二供应路径的第一和第二供气阀; 以及控制器，其控制所述排气阀和所述第一和第二气体供给阀，使得当所述第一种气体被供应到所述反应室时，所述第一种气体在状态下从所述第一供给路径供应到所述反应室 其中停止反应室的排气以将反应室中的多个基板暴露于第一种气体，并且当将第二种气体供应到反应室时，将第二种气体供应到 在反应室被真空排气装置排出的状态下通过第二供给路径反应室，将反应室内的多个基板暴露于第二种气体。

    Vertical type semiconductor device producing apparatus
    10.
    发明申请
    Vertical type semiconductor device producing apparatus 审中-公开

    公开(公告)号：US20050217577A1

    公开(公告)日：2005-10-06

    申请号：US11121919

    申请日：2005-05-05

    申请人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    发明人： Kazuyuki Okuda ,  Yasushi Yagi ,  Toru Kagaya ,  Masanori Sakai

    IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45523 ,  C23C16/345

    摘要： A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.