公开(公告)号：US5089094A

公开(公告)日：1992-02-18

申请号：US493733

申请日：1990-03-15

申请人： Tadashi Ogasawara ,  Yoshitake Natsume ,  Kenji Fujita

发明人： Tadashi Ogasawara ,  Yoshitake Natsume ,  Kenji Fujita

IPC分类号： C25C3/04 ,  C25C7/04

CPC分类号： C25C7/04 ,  C25C3/04

摘要： In a process for the electrolytic production of magnesium by the molten salt electrolysis of magnesium chloride using a molten salt cell bath comprised mainly of one or more salts selected from alkali metal chlorides and alkaline earth metal chlorides, the molten salt bath is enriched with magnesium chloride by suspending a magnesium oxide and/or magnesium carbonate powder to form a molten suspension and passing a chlorine-containing gas through the molten suspension at a temperature of 600.degree.-900.degree. C. so as to react the suspended powder with chlorine to form magnesium chloride. The resulting molten salt enriched with magnesium chloride can be directly introduced into the cell for electrolysis, thereby eliminating moisture absorption by the highly hygroscopic magnesium chloride. A pure magnesium can be produced with a high yield and improved current efficiency.

摘要翻译： 在使用主要由选自碱金属氯化物和碱土金属氯化物中的一种或多种盐组成的熔融盐池电解液通过熔融盐电解氯化镁进行电解生产镁的方法中，熔融盐浴富含氯化镁 通过使氧化镁和/或碳酸镁粉末悬浮以形成熔融悬浮液并使含氯气体在600-900℃的温度下通过熔融悬浮液，以使悬浮的粉末与氯反应形成镁 氯化物。 所得到的富含氯化镁的熔盐可以直接引入电解槽中进行电解，从而消除高吸湿性氯化镁的吸湿。 可以以高产率和改善的电流效率生产纯镁。

公开(公告)号：US20080095930A1

公开(公告)日：2008-04-24

申请号：US11575466

申请日：2005-09-05

申请人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma

发明人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma

IPC分类号： B05D5/12

CPC分类号： H01M4/0426 ,  H01M4/1391 ,  H01M4/485 ,  H01M4/525 ,  H01M4/661 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2004/027 ,  Y10T29/49115

摘要： The lowness of the initial efficiency which is a drawback of lithium secondary batteries wherein a SiO negative electrode is used is largely made better without hindering a large initial charge capacity peculiar to the lithium secondary batteries. A fall in the cycle characteristic when the thickness of the SiO layer is made large is prevented. To realize these matters, a thin film of SiO is formed, as a negative electrode active material layer, on the surface of a current collector by vacuum evaporation or sputtering. The film is preferably formed by an ion plating process. The thickness of the SiO thin film is set to 5 μm or more. The surface roughness of the current collector is set to follows: the maximum height roughness Rz=5.0 or more. After the formation of the thin film, the film is thermally treated in a nonoxidative atmosphere.

摘要翻译： 作为使用了SiO负极的锂二次电池的缺点的初始效率的低度大大地变得更好，而不会妨碍锂二次电池特有的大的初始充电能力。 防止了当SiO层的厚度变大时的循环特性的下降。 为了实现这些目的，通过真空蒸发或溅射在集电体的表面上形成SiO的薄膜作为负极活性物质层。 该膜优选通过离子镀工艺形成。 SiO薄膜的厚度设定为5μm以上。 集电体的表面粗糙度设定为：最大高度粗糙度Rz = 5.0以上。 薄膜形成后，在非氧化气氛中进行热处理。

公开(公告)号：US20050085095A1

公开(公告)日：2005-04-21

申请号：US10501996

申请日：2002-11-29

申请人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

发明人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

IPC分类号： C04B35/14 ,  C04B35/645 ,  C23C14/24 ,  C23C14/34 ,  H01L21/31 ,  H01L21/469

CPC分类号： C04B35/645 ,  C04B35/14 ,  C04B2235/3418 ,  C04B2235/5427 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/79

摘要： A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 μm, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

摘要翻译： 提供用作形成氧化硅薄膜的材料的一氧化硅的烧结体，其中通过将样品在1,300℃的加热温度和真空气氛中，即在 10Pa以下的压力相对于测定前的样品不超过4质量％。 该烧结体可以通过在非氧气氛中烧结粒径不小于250μm的SiO粒子，或者在其压制成型之后或在其压制成形期间来制造。 该烧结体的蒸发速度高，并且当其用作成膜材料时，可以预期提高生产氧化硅薄膜的生产率。 因此，可以广泛地应用于形成用作电绝缘膜，机械保护膜，光学膜，食品包装材料的阻隔膜等的氧化硅薄膜等。

公开(公告)号：US08029655B2

公开(公告)日：2011-10-04

申请号：US11996550

申请日：2006-07-03

申请人： Jyunji Kido ,  Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma ,  Koichi Mori

发明人： Jyunji Kido ,  Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma ,  Koichi Mori

IPC分类号： C23C14/00

CPC分类号： C23C14/3414 ,  C23C14/08 ,  H01B1/08 ,  H01L51/5253 ,  H05B33/26

摘要： Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.

摘要翻译： 本发明提供能够赋予溅射膜高的阻水性和高柔性的溅射靶，能够在溅射中保持高的成膜速度，并且可能会对要形成的膜的目标物质造成损害 尽可能。 为了实现这一点，将含有20〜80重量％的SiO粉末，剩余的粉末由TiO 2粉末和/或Ti粉末制成的混合粉末进行压制和烧结。 该烧结体具有SiαTi＆bgr;Oγ的组成，其中α，bgr; 和γ分别为Si，Ti和O的摩尔比，α/ 范围为0.45〜7.25，γ/（α+和bgr）的比例范围为0.80〜1.70。

公开(公告)号：US20090127108A1

公开(公告)日：2009-05-21

申请号：US11996550

申请日：2006-07-03

申请人： Jyunji Kido ,  Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma ,  Koichi Mori

发明人： Jyunji Kido ,  Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma ,  Koichi Mori

IPC分类号： C23C14/34 ,  B22F3/10 ,  B27N3/02

CPC分类号： C23C14/3414 ,  C23C14/08 ,  H01B1/08 ,  H01L51/5253 ,  H05B33/26

摘要： Provided is a sputtering target which can give a high water barrier property and a high flexibility to a sputtering film, can keep a high film forming rate certainly in sputtering, and can make damages to an objective substance wherein a film is to be formed as small as possible. In order to realize this, a mixed powder which contains 20 to 80% by weight of a SiO powder, the balance of the powder being made of a TiO2 powder and/or a Ti powder, is pressed and sintered. The sintered body has a composition of SiαTiβOγ wherein α, β and γ are mole ratios of Si, Ti and O, respectively, and the ratio of α/β ranges from 0.45 to 7.25 and the ratio of γ/(α+β) ranges from 0.80 to 1.70.

摘要翻译： 本发明提供能够赋予溅射膜高的阻水性和高柔性的溅射靶，能够在溅射中保持高的成膜速度，并且可能会对要形成的膜的目标物质造成损害 尽可能。 为了实现这一点，将含有20〜80重量％的SiO粉末，剩余的粉末由TiO 2粉末和/或Ti粉末制成的混合粉末进行压制并烧结。 烧结体具有SialphaTibetaOgamma的组成，其中α，β和γ分别是Si，Ti和O的摩尔比，α/β范围在0.45至7.25之间，γ/（α+β）的比例 从0.80到1.70。

公开(公告)号：US07151068B2

公开(公告)日：2006-12-19

申请号：US10501996

申请日：2002-11-29

申请人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

发明人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Kazuomi Azuma ,  Toshiharu Iwase

IPC分类号： C04B35/01

CPC分类号： C04B35/645 ,  C04B35/14 ,  C04B2235/3418 ,  C04B2235/5427 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/6581 ,  C04B2235/79

摘要： A sintered object of silicon monoxide for use as a material for forming silicon oxide thin films is provided of which the evaporation residue as determined by subjecting a sample thereof to thermogravimetry at a heating temperature of 1,300° C. and in a vacuum atmosphere, namely at a pressure of not higher than 10 Pa, is not more than 4% by mass relative to the sample before measurement. This sintered object can be produced by sintering SiO particles having a particle diameter of not smaller than 250 μm, either after press forming thereof or during press forming thereof, in a non-oxygen atmosphere. This sintered object is high in evaporation rate and, when it is used as a material for film formation, an improvement in productivity in producing silicon oxide thin films can be expected. Thus, it can be widely applied in forming silicon oxide thin films useful as electric insulating films, mechanical protection films, optical films, barrier films of food packaging materials, etc.

摘要翻译： 提供用作形成氧化硅薄膜的材料的一氧化硅的烧结体，其中通过将样品在1,300℃的加热温度和真空气氛中，即在 10Pa以下的压力相对于测定前的样品不超过4质量％。 该烧结体可以通过在非氧气氛中烧结粒径不小于250μm的SiO粒子，或者在其压制成型之后或在其压制成形期间来制造。 该烧结体的蒸发速度高，并且当其用作成膜材料时，可以预期提高生产氧化硅薄膜的生产率。 因此，可以广泛地应用于形成用作电绝缘膜，机械保护膜，光学膜，食品包装材料的阻隔膜等的氧化硅薄膜等。

公开(公告)号：US20070059601A1

公开(公告)日：2007-03-15

申请号：US10554397

申请日：2004-04-16

申请人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma

发明人： Yoshitake Natsume ,  Tadashi Ogasawara ,  Kazuomi Azuma

IPC分类号： H01M4/48 ,  C23C14/34

CPC分类号： H01M4/131 ,  H01M4/0404 ,  H01M4/0421 ,  H01M4/0426 ,  H01M4/0471 ,  H01M4/1391 ,  H01M4/485 ,  H01M4/525 ,  H01M10/0525 ,  H01M2004/027

摘要： Greatly improved is an initial efficiency, which would be otherwise low as a fault, without reducing a magnitude of an initial charge capacity, which is a feature of a lithium secondary battery using an SiO as an negative electrode. A cycle characteristic is improved. In order to realize the improvements, a thin film of silicon oxide formed by vacuum vapor deposition or sputtering as an negative electrode active material layer 32 on a surface of a collector 31. The thin film is formed preferably by means of an ion plating method. The silicon oxide is SiOx (0.5≦x

摘要翻译： 作为故障，初始效率大大提高，不会降低初始充电容量的大小，这是使用SiO作为负极的锂二次电池的特征。 循环特性得到改善。 为了实现改进，通过真空蒸镀或溅射形成的氧化硅薄膜作为集电体31的表面上的负极活性物质层32。 优选通过离子镀法形成薄膜。 氧化硅为SiO x（0.5 <= x <1.0），膜厚为0.1〜50μm的范围。 使用的真空气相沉积源是在1.0％或更小的搅拌器试验中具有重量减少百分比（克力值）的SiO沉积物。 在真空气相沉积中，在真空或惰性气氛中对集电体31的表面进行清洁处理，之后在集电体的表面上形成氧化硅薄膜，而不会将集电体的表面暴露于 空气气氛。

公开(公告)号：US20100089204A1

公开(公告)日：2010-04-15

申请号：US11992162

申请日：2006-08-22

申请人： Tadashi Ogasawara ,  Makoto Yamaguchi ,  Toru Uenishi ,  Masahiko Hori ,  Kazuo Takemura ,  Katsunori Dakeshita

发明人： Tadashi Ogasawara ,  Makoto Yamaguchi ,  Toru Uenishi ,  Masahiko Hori ,  Kazuo Takemura ,  Katsunori Dakeshita

IPC分类号： C22B34/12

CPC分类号： C25C3/28 ,  C22B34/1272 ,  C22B34/129 ,  C22B34/1295 ,  C25C3/02 ,  C25C7/005 ,  C25C7/06

摘要： A process for producing Ti, comprising a reduction step of reacting TiCl4 with Ca in a CaCl2-containing molten salt having the Ca dissolved therein to thereby form Ti particles, a separation step of separating the Ti particles formed in said molten salt from said molten salt and an electrolysis step of electrolyzing the molten salt so as to increase the Ca concentration, wherein the molten salt increased in Ca concentration in the electrolysis step is introduced into a regulating cell to thereby render the Ca concentration of the molten salt constant and thereafter the molten salt is used for the reduction of TiCl4 in the reduction step. In the present invention, the Ca concentration of the molten salt to be fed to the corresponding reduction vessel can be inhibited from fluctuating and, at the same time, can maintain high concentration levels. Further, a large volume of the molten salt can be treated continuously. Therefore, the reduction reaction of TiCl4 can be efficiently performed, and the process can be effectively utilized in the production of Ti by Ca reduction as a production process for realizing Ti production on an industrial scale.

摘要翻译： 一种制备Ti的方法，包括在溶解有Ca的含CaCl 2的熔融盐中使TiCl4与Ca反应从而形成Ti颗粒的还原步骤，将在所述熔融盐中形成的Ti颗粒与所述熔融盐分离的分离步骤 以及电解电解步骤，电解所述熔融盐以增加所述Ca浓度，其中将所述电解步骤中的Ca浓度升高的所述熔融盐引入调节池中，从而使所述熔融盐的Ca浓度恒定， 盐在还原步骤中用于还原TiCl4。 在本发明中，可以抑制供给到相应的还原容器的熔融盐的Ca浓度的波动，同时可以保持高浓度水平。 此外，可以连续地处理大量的熔融盐。 因此，可以有效地进行TiCl 4的还原反应，并且通过Ca还原可以有效地利用Ti的制造，作为实现工业规模的Ti生产的制造方法。

公开(公告)号：US20090239738A1

公开(公告)日：2009-09-24

申请号：US12371196

申请日：2009-02-13

申请人： Katsumi Okada ,  Katsuhiro Nishihara ,  Yasuhiro Masaki ,  Haruhiko Kajimura ,  Michiyasu Takahashi ,  Tadashi Yao ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Shiji Shimosaki ,  Kouji Oda ,  Sadanobu Nagaoka

发明人： Katsumi Okada ,  Katsuhiro Nishihara ,  Yasuhiro Masaki ,  Haruhiko Kajimura ,  Michiyasu Takahashi ,  Tadashi Yao ,  Tadashi Ogasawara ,  Munetoshi Watanabe ,  Shiji Shimosaki ,  Kouji Oda ,  Sadanobu Nagaoka

IPC分类号： B01J27/135

CPC分类号： B01J35/004 ,  B01D53/8609 ,  B01D53/8612 ,  B01D53/8628 ,  B01D53/8634 ,  B01D53/8662 ,  B01D2255/802 ,  B01J21/063 ,  B01J23/18 ,  B01J27/132 ,  B01J27/135 ,  B01J35/002 ,  B01J37/0238 ,  B01J37/22

摘要： Titanium oxide-based photocatalysts which contain a metal halide in titanium oxide and which are prepared from titanium oxide and/or its precursor, which may optionally be heat treated, by contact with a reactive gas containing a metal halide of the formula MXn or MOXn (wherein M=a metal, X=a halogen, and n=an integer) with heating stably develop a high photocatalytic activity with visible light irradiation. The photocatalysts may subsequently be stabilized by contact with water or by heat treatment, and/or promoted by contact with a heteropoly acid and/or an isopoly acid so as to include a metal complex in the titanium oxide. Photocatalysts prepared in this manner exhibit novel ESR features. The present invention also provides methods for preparing these photocatalysts, a photocatalyst dispersion and a photocatalytic coating fluid containing such a photocatalyst, and photocatalytic functional products and methods for their manufacture using the photocatalyst.

摘要翻译： 二氧化钛基光催化剂，其在二氧化钛中含有金属卤化物，并且可以通过与含有式MXn或MOXn的金属卤化物的反应性气体接触而由氧化钛和/或其前体制备，其可以任选地进行热处理（ 其中M =金属，X =卤素，n =整数），加热可稳定地产生可见光照射的高光催化活性。 可以随后通过与水接触或通过热处理来稳定光催化剂，和/或通过与杂多酸和/或异多酸接触来促进光催化剂，以在氧化钛中包括金属络合物。 以这种方式制备的光催化剂显示出新的ESR特征。 本发明还提供了制备这些光催化剂的方法，光催化剂分散体和含有这种光催化剂的光催化涂布液，以及光催化功能产物及其使用该光催化剂的制造方法。

公开(公告)号：US20090114546A1

公开(公告)日：2009-05-07

申请号：US12224843

申请日：2007-03-09

申请人： Tadashi Ogasawara ,  Makoto Yamaguchi

发明人： Tadashi Ogasawara ,  Makoto Yamaguchi

IPC分类号： C25C3/36 ,  C25C3/28 ,  C25C7/00

CPC分类号： C22B34/129 ,  C22B26/20 ,  C22B34/1272 ,  C25C3/02 ,  C25C3/28

摘要： The present invention provides a method by which a metal-fog-forming metal dissolved in one portion of “a molten salt mixture consisted of one or more of metal-fog-forming metal containing molten salts” (generally, a molten salt) can be removed and transferred to another portion of the molten salt to increase the concentration thereof. The method can hence be utilized as one of means for treating molten salts in various industrial fields in which metal-fog-forming metal-containing molten salts such as Ca or Na are handled. In particular, when the method is utilized in producing Ti by Ca reduction, the Ca dissolved in the molten salt to be fed to an electrolytic cell can be rapidly removed (recovered) and the Ca formation efficiency during the electrolysis of the molten salt can be enhanced. Consequently, Ca formation and TiCl4 reduction in the electrolysis of the molten salt can be efficiently carried out and a stable operation on a commercial scale is possible. Thus, the method can be efficiently utilized in producing Ti or a Ti alloy by Ca reduction.

摘要翻译： 本发明提供了一种溶解在由熔融盐形成金属成形金属中的一种或多种熔融盐混合物组成的熔融盐混合物（通常为熔融盐）的一部分中的金属雾形成金属可以是 除去并转移到另一部分熔融盐中以增加其浓度。 因此，该方法可以用作处理含金属成雾金属的熔融盐如Ca或Na的各种工业领域中的熔融盐的一种手段。 特别是当通过Ca还原来制造Ti时，可以迅速除去（回收）溶解在供给电解槽的熔融盐中的Ca，并且熔融盐电解时的Ca生成效率可以为 增强。 因此，可以有效地进行熔融盐的电解中的Ca生成和TiCl 4的还原，从而能够实现商业规模的稳定化。 因此，该方法可以有效地用于通过Ca还原生产Ti或Ti合金。