Nozzle-type analysis apparatus
    1.
    发明授权
    Nozzle-type analysis apparatus 失效
    喷嘴式分析装置

    公开(公告)号:US5478526A

    公开(公告)日:1995-12-26

    申请号:US282469

    申请日:1994-07-29

    摘要: A nozzle-type analysis apparatus for sucking a sample solution in a sample vessel for analyzing the sample solution. A sample suction nozzle for sucking the sample solution stored in the sample vessel and a solution component sensor having a sensor forming portion formed integrally with a front end portion of the sample suction nozzle to be inserted into the sample vessel are provided. The integral structure of the sample suction nozzle and the solution component sensor has a size capable of being inserted into the sample vessel, the solution component sensor having a sensor output portion effected with a water-resistant insulation layer. A hydrophobic film is further formed on the surface of the sensor a coat treatment. A sample flow shut-out valve is disposed in the sample flow passage at a portion between the front end of the sample suction nozzle and the sensor forming portion of the solution component sensor.

    摘要翻译: 一种用于在样品容器中吸取样品溶液以分析样品溶液的喷嘴型分析装置。 提供了用于吸取存储在样品容器中的样品溶液的样品吸嘴,以及具有与样品吸嘴的前端部一体形成的传感器形成部的溶液成分传感器,插入到样品容器中。 样品吸嘴和溶液成分传感器的整体结构具有能够插入样品容器中的尺寸,溶液成分传感器具有用防水绝缘层实现的传感器输出部分。 在传感器的表面上进一步形成疏水膜,进行涂层处理。 在样品流动通道中,在样品吸嘴的前端和溶液成分传感器的传感器形成部分之间的部分设置有样品流动截止阀。

    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    图像传感器及其制造方法

    公开(公告)号:US20100025584A1

    公开(公告)日:2010-02-04

    申请号:US12508846

    申请日:2009-07-24

    IPC分类号: H01L31/02 H01L31/00

    摘要: An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

    摘要翻译: 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方,第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件,支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素,而不经由空腔,其中多个第一像素和多个第二像素被二维布置以形成像素区域,并且每个第二像素与 第一个像素。

    Apparatus and method for image formation with a liquid developer
    4.
    发明授权
    Apparatus and method for image formation with a liquid developer 失效
    用液体显影剂成像的装置和方法

    公开(公告)号:US06725006B2

    公开(公告)日:2004-04-20

    申请号:US10460182

    申请日:2003-06-13

    IPC分类号: G03G1510

    CPC分类号: G03G15/0121

    摘要: Image forming apparatus which form an image on a substrate and uses a liquid developer containing toner particles and a solvent. One embodiment includes a latent image retaining body, a first developing surface facing the latent image retaining body at a first development station, a latent image forming unit, and a second developing surface facing the latent image retaining body at a second development station. The latent image retaining body has a photosensitive layer which has a dielectric constant &egr;P [C2/Nm2] and an average thickness dp [m]. The photosensitive layer retains an image developed by the first developing surface and a latent image comprising image and non-image regions formed by the latent image forming unit. The second developing surface is supplied with a developing electrical potential having an electrical potential difference &Dgr;V from an electrical potential of non-image region of the latent image. The plurality of toner particles of the first liquid developer has a volume density &rgr;m[kg/m3], a surface density mr[kg/m2], a dielectric constant &egr;r [C2/Nm2], an average radius r [m], and a density of electrical charge qr[C/kg], and the image developed on the latent image retaining body by the first developing surface has an average thickness dr [m] at the second development station. The second liquid developer has an average thickness dt [m] at the second development station and a dielectric constant &egr;t [C2/Nm2], wherein following equations are satisfied, 1 × 10 - 11 ⁡ [ N ] ≤ 4 ⁢   ⁢ π ⁢   ⁢ r 3 ⁢ ρ m ⁢ q r 3 ⁢ ( - q r ⁢ m r ϵ r ⁢ d r ⁢ ( d r - 1 A ⁢ d r m r ⁢ ( - Δ ⁢   ⁢ V q r + ( d r 2 ⁢   ⁢ ϵ r + d t ϵ t ) ⁢ m r ) ) ) ≤ 8 × 10 - 9 ⁡ [ N ] , and ⁢   ⁢ A = d p ϵ p + d r ϵ r + d t ϵ t .

    摘要翻译: 在基板上形成图像并使用含有调色剂颗粒和溶剂的液体显影剂的图像形成装置。 一个实施例包括潜像保持体,在第一显影台处面对潜像保持体的第一显影表面,潜像形成单元和在第二显影站处面对潜像保持体的第二显影表面。 潜像保持体具有介电常数εP[C 2 / Nm 2]和平均厚度dp [m]的感光层。 感光层保持由第一显影表面显影的图像和包括由潜像形成单元形成的图像和非图像区域的潜像。 向第二显影表面供给具有与潜像的非图像区域的电势相差电位差ΔVa的显影电位。 第一液体显影剂的多个调色剂颗粒的体积密度rhom [kg / m 3],表面密度mr [kg / m 2],介电常数ε[C 2 / Nm 2 >],平均半径r [m]和电荷密度qr [C / kg],由第一显影面在潜像保持体上显影的图像在第二显影面上具有平均厚度dr [m] 开发站。 第二液体显影剂在第二显影台具有平均厚度dt [m]和介电常数εil[C 2 / Nm 2],其中满足以下等式:

    Uncooled infrared image sensor
    5.
    发明授权
    Uncooled infrared image sensor 有权
    未冷却的红外图像传感器

    公开(公告)号:US08338902B2

    公开(公告)日:2012-12-25

    申请号:US13050512

    申请日:2011-03-17

    IPC分类号: H01L31/024

    摘要: An uncooled infrared image sensor according to an embodiments includes: a plurality of pixel cells formed in a first region on a semiconductor substrate; a reference pixel cell formed in a second region on the semiconductor substrate and corresponding to each row or each column of the pixel cells; a supporting unit formed for each of the pixel cell and supporting a corresponding pixel cell; and an interconnect unit formed for each reference pixel cell. Each of the pixel cells includes: a first infrared absorption film and a first heat sensitive element. The reference pixel cell includes: a second infrared absorption film and a second heat sensitive element, the second heat sensitive element having the same characteristics as characteristics of the first heat sensitive element. The third and fourth interconnects of the interconnect unit have the same electrical resistance as electrical resistance of the first and second interconnects of the supporting unit.

    摘要翻译: 根据实施例的非制冷红外图像传感器包括:形成在半导体衬底上的第一区域中的多个像素单元; 形成在所述半导体衬底上的与所述像素单元的每列或每列相对应的所述半导体衬底上的第二区域中的参考像素单元; 为每个像素单元形成的支撑单元,并支撑相应的像素单元; 以及为每个参考像素单元形成的互连单元。 每个像素单元包括:第一红外线吸收膜和第一热敏元件。 参考像素单元包括:第二红外线吸收膜和第二热敏元件,第二热敏元件具有与第一热敏元件的特性相同的特性。 互连单元的第三和第四互连具有与支撑单元的第一和第二互连的电阻相同的电阻。

    Planar X-ray detector
    7.
    发明授权
    Planar X-ray detector 失效
    平面X射线探测器

    公开(公告)号:US06559449B2

    公开(公告)日:2003-05-06

    申请号:US09817150

    申请日:2001-03-27

    IPC分类号: G21K400

    摘要: A planar X-ray detector including an X-ray-electric charge conversion film converting an incident X-ray into an electric charge, a pixel electrode contiguous to the X-ray-electric charge conversion film and arranged for every pixel, and a switching element connected to the pixel electrode. Also included is a signal line connected to the switching element, and a scanning line supplying a driving signal to the switching element. Further, the X-ray-electric charge conversion film contains phosphor particles, a photosensitive material, and a carrier transfer material.

    摘要翻译: 一种平面X射线检测器,其包括将入射的X射线转换为电荷的X射线电荷转换膜,与X射线电荷转换膜邻接的像素电极,并且对每个像素进行切换 元件连接到像素电极。 还包括连接到开关元件的信号线和向开关元件提供驱动信号的扫描线。 此外,X射线电荷转换膜含有荧光体颗粒,感光材料和载体转印材料。

    Transportable waste collection and treatment toilet system
    8.
    发明授权
    Transportable waste collection and treatment toilet system 失效
    运输垃圾收集和处理厕所系统

    公开(公告)号:US06178566B2

    公开(公告)日:2001-01-30

    申请号:US09203157

    申请日:1998-12-10

    申请人: Hitoshi Yagi

    发明人: Hitoshi Yagi

    IPC分类号: E03D5016

    摘要: A toilet housing and waste collection and treatment system purify wastewater to a satisfactory level. When solid wastes are conveyed from individual toilets (31)-(33) into an active circulation chamber (16) in a toilet housing (10), the solid wastes are subjected to air exposure treatments in the active circulation chamber (16). The wastewater exposed to air in the active circulation chamber (16) is then purified through a three-phase flowing structure in first and second active water chambers (51) and (52), with the three-phase flowing structure including water, air, and carrier particles containing aerobic microorganisms. The wastewater so treated flows into first and second sediment separation chambers (53) and (54) where solid wastes are settled down and separated from the wastewater. The treated water is then supplied to a water reservoir (56) which in turns supplies the water to the respective toilets (31)-(33). Sediment settled at the bottom of the respective sediment separation chambers is fed and stored in a sediment storage chamber (55).

    摘要翻译: 厕所住房和废物收集处理系统将废水净化至令人满意的水平。 当将固体废物从马桶(31) - (33)输送到马桶壳体(10)中的活动循环室(16)中时,固体废物在活性循环室(16)中进行空气曝光处理。 然后,在主动循环室(16)中暴露于空气中的废水通过第一和第二活性水室(51)和(52)中的三相流动结构进行净化,三相流动结构包括水,空气, 和含有需氧微生物的载体颗粒。 如此处理的废水流入第一和第二沉淀物分离室(53)和(54),其中固体废物沉降并与废水分离。 然后将经处理的水供应到储水器(56),储水器(56)又将水供应到相应的厕所(31) - (33)。 沉积在各沉积物分离室底部的沉积物进料并储存在沉积物储存室(55)中。

    Infrared imaging device and method of manufacturing the same
    9.
    发明授权
    Infrared imaging device and method of manufacturing the same 有权
    红外成像装置及其制造方法

    公开(公告)号:US08304848B2

    公开(公告)日:2012-11-06

    申请号:US12883732

    申请日:2010-09-16

    IPC分类号: H01L31/00 H01L31/04

    摘要: Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

    摘要翻译: 某些实施例提供了一种红外成像装置,包括:SOI结构,其被放置在离基板一定距离处,并且包括:热敏二极管,其检测红外线并将红外线转换成热; 以及将热敏二极管彼此分离的STI区域; 堆叠在SOI结构上的层间绝缘膜; 以及连接到热敏二极管的支撑腿和设置在热敏二极管的外周区域中的垂直信号线。 每个支撑腿包括:将信号传输到垂直信号线的互连单元; 以及层叠绝缘层,夹着所述互连单元,所述层间绝缘层的每个底侧位于比所述SOI结构更高的位置。

    Image sensor and manufacturing method thereof
    10.
    发明授权
    Image sensor and manufacturing method thereof 有权
    图像传感器及其制造方法

    公开(公告)号:US08067740B2

    公开(公告)日:2011-11-29

    申请号:US12508846

    申请日:2009-07-24

    IPC分类号: H01L31/02

    摘要: An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.

    摘要翻译: 图像传感器包括半导体衬底; 第一像素被布置在设置在半导体衬底内的腔上方,第一像素将由入射光产生的热能转换为电信号; 连接在第一像素和半导体衬底之间的支撑部件,支撑部件支撑空腔上方的第一像素; 以及固定地设置在半导体衬底上的第二像素,而不经由空腔,其中多个第一像素和多个第二像素被二维布置以形成像素区域,并且每个第二像素与 第一个像素。