利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

11 条记录 (耗时 0.065 秒)

    Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
    1.
    发明申请
    Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same 有权
    用于抛光相变存储器件的化学机械抛光浆料组合物及使用其的相变存储器件抛光方法

    公开(公告)号：US20090294749A1

    公开(公告)日：2009-12-03

    申请号：US12540661

    申请日：2009-08-13

    申请人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

    发明人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

    IPC分类号： H01L21/306 ,  H01L21/10 ,  H01L21/06 ,  H01L47/00

    CPC分类号： C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

    摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

    摘要翻译： 提供了一种用于相变存储器件的化学机械抛光（CMP）的浆料组合物。 浆料组合物包含去离子水和铁或铁化合物。 浆料组合物可以在相变存储器件上实现高抛光速率并且改善相变记忆材料和抛光停止层（例如，氧化硅膜）之间的抛光选择性，可以最小化处理缺陷的发生（例如， 凹陷和侵蚀），并且可以降低相变记忆材料上的蚀刻速率，以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。

    Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same
    2.
    发明申请
    Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same 审中-公开
    用于抛光相变存储器件的化学机械抛光浆料组合物及使用其的相变存储器件抛光方法

    公开(公告)号：US20090001339A1

    公开(公告)日：2009-01-01

    申请号：US11967439

    申请日：2007-12-31

    申请人： Tae Young LEE ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

    发明人： Tae Young LEE ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

    IPC分类号： H01L45/00 ,  C09K13/00 ,  C09K13/06

    CPC分类号： H01L45/144 ,  C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/148 ,  H01L45/1683

    摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof. The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

    摘要翻译： 提供了一种用于相变存储器件的化学机械抛光（CMP）的浆料组合物。 浆料组合物包含去离子水，含氮化合物和任选的磨料颗粒，氧化剂或其组合。 浆料组合物可以以高速率抛光相变存储器件，可以在相变记忆材料和抛光停止层（例如，氧化硅膜）之间实现高抛光选择性，并且可以最小化处理缺陷的发生 （例如，凹陷和侵蚀）以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。

    Chemical mechanical polishing slurry composition for polishing phase-change memory device and method for polishing phase-change memory device using the same
    3.
    发明授权
    Chemical mechanical polishing slurry composition for polishing phase-change memory device and method for polishing phase-change memory device using the same 有权
    用于抛光相变存储器件的化学机械抛光浆料组合物和使用其的相变存储器件的抛光方法

    公开(公告)号：US08586464B2

    公开(公告)日：2013-11-19

    申请号：US12540661

    申请日：2009-08-13

    申请人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

    发明人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

    IPC分类号： H01L21/4763 ,  H01L21/00

    CPC分类号： C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

    摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

    摘要翻译： 提供了一种用于相变存储器件的化学机械抛光（CMP）的浆料组合物。 浆料组合物包含去离子水和铁或铁化合物。 浆料组合物可以在相变存储器件上实现高抛光速率并且改善相变记忆材料和抛光停止层（例如，氧化硅膜）之间的抛光选择性，可以最小化处理缺陷的发生（例如， 凹陷和侵蚀），并且可以降低相变记忆材料上的蚀刻速率，以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。

    Slurry Composition for Chemical Mechanical Polishing and Precursor Composition Thereof
    5.
    发明申请
    Slurry Composition for Chemical Mechanical Polishing and Precursor Composition Thereof 有权
    化学机械抛光及其前体组合物的浆料组成

    公开(公告)号：US20080121839A1

    公开(公告)日：2008-05-29

    申请号：US11615094

    申请日：2006-12-22

    申请人： Tae Won PARK ,  In Kyung Lee ,  Byoung Ho Choi

    发明人： Tae Won PARK ,  In Kyung Lee ,  Byoung Ho Choi

    IPC分类号： C09K13/00

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： Disclosed are a slurry composition for chemical mechanical polishing and a precursor composition thereof. The polishing slurry composition includes deionized water, abrasive particles, a pH-adjusting agent and a surfactant, wherein the surfactant includes two or more ionic moieties and two or more lipophilic groups. The polishing slurry composition can polish convex surfaces of a semiconductor having a step height at a higher rate than the polishing rate for concave surfaces acting as polishing stop layers of the semiconductor so that the polishing can be self-stopped, reduces the occurrence of surface defects after the polishing process, and has a high degree of polishing planarization and good dispersion stability.

    摘要翻译： 公开了一种用于化学机械抛光的浆料组合物及其前体组合物。 抛光浆料组合物包括去离子水，磨料颗粒，pH调节剂和表面活性剂，其中表面活性剂包括两个或多个离子部分和两个或更多个亲脂基团。 抛光浆料组合物可以对作为半导体的抛光停止层的凹面的抛光速率高的阶梯高度的半导体的凸面进行抛光，使得抛光可以自停，减少表面缺陷的发生 在抛光过程之后，并且具有高度的抛光平坦化和良好的分散稳定性。

    Slurry composition for chemical mechanical polishing and precursor composition thereof
    6.
    发明授权
    Slurry composition for chemical mechanical polishing and precursor composition thereof 有权
    用于化学机械抛光的浆料组合物及其前体组合物

    公开(公告)号：US07695637B2

    公开(公告)日：2010-04-13

    申请号：US11615094

    申请日：2006-12-22

    申请人： Tae Won Park ,  In Kyung Lee ,  Byoung Ho Choi

    发明人： Tae Won Park ,  In Kyung Lee ,  Byoung Ho Choi

    IPC分类号： H01L21/302

    CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

    摘要： Disclosed are a slurry composition for chemical mechanical polishing and a precursor composition thereof. The polishing slurry composition includes deionized water, abrasive particles, a pH-adjusting agent and a surfactant, wherein the surfactant includes two or more ionic moieties and two or more lipophilic groups. The polishing slurry composition can polish convex surfaces of a semiconductor having a step height at a higher rate than the polishing rate for concave surfaces acting as polishing stop layers of the semiconductor so that the polishing can be self-stopped, reduces the occurrence of surface defects after the polishing process, and has a high degree of polishing planarization and good dispersion stability.

    摘要翻译： 公开了一种用于化学机械抛光的浆料组合物及其前体组合物。 抛光浆料组合物包括去离子水，磨料颗粒，pH调节剂和表面活性剂，其中表面活性剂包括两个或多个离子部分和两个或更多个亲脂基团。 抛光浆料组合物可以对作为半导体的抛光停止层的凹面的抛光速率高的阶梯高度的半导体的凸面进行抛光，使得抛光可以自停，减少表面缺陷的发生 在抛光过程之后，并且具有高度的抛光平坦化和良好的分散稳定性。