公开(公告)号：US20090294749A1

公开(公告)日：2009-12-03

申请号：US12540661

申请日：2009-08-13

申请人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

发明人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

IPC分类号： H01L21/306 ,  H01L21/10 ,  H01L21/06 ,  H01L47/00

CPC分类号： C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

摘要翻译： 提供了一种用于相变存储器件的化学机械抛光（CMP）的浆料组合物。 浆料组合物包含去离子水和铁或铁化合物。 浆料组合物可以在相变存储器件上实现高抛光速率并且改善相变记忆材料和抛光停止层（例如，氧化硅膜）之间的抛光选择性，可以最小化处理缺陷的发生（例如， 凹陷和侵蚀），并且可以降低相变记忆材料上的蚀刻速率，以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。

公开(公告)号：US20090001339A1

公开(公告)日：2009-01-01

申请号：US11967439

申请日：2007-12-31

申请人： Tae Young LEE ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

发明人： Tae Young LEE ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

IPC分类号： H01L45/00 ,  C09K13/00 ,  C09K13/06

CPC分类号： H01L45/144 ,  C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/148 ,  H01L45/1683

摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof. The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

摘要翻译： 提供了一种用于相变存储器件的化学机械抛光（CMP）的浆料组合物。 浆料组合物包含去离子水，含氮化合物和任选的磨料颗粒，氧化剂或其组合。 浆料组合物可以以高速率抛光相变存储器件，可以在相变记忆材料和抛光停止层（例如，氧化硅膜）之间实现高抛光选择性，并且可以最小化处理缺陷的发生 （例如，凹陷和侵蚀）以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。

公开(公告)号：US08586464B2

公开(公告)日：2013-11-19

申请号：US12540661

申请日：2009-08-13

申请人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

发明人： Tae Young Lee ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

IPC分类号： H01L21/4763 ,  H01L21/00

CPC分类号： C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

摘要翻译： 提供了一种用于相变存储器件的化学机械抛光（CMP）的浆料组合物。 浆料组合物包含去离子水和铁或铁化合物。 浆料组合物可以在相变存储器件上实现高抛光速率并且改善相变记忆材料和抛光停止层（例如，氧化硅膜）之间的抛光选择性，可以最小化处理缺陷的发生（例如， 凹陷和侵蚀），并且可以降低相变记忆材料上的蚀刻速率，以提供高质量的抛光表面。 还提供了使用该浆料组合物来研磨相变存储器件的方法。

公开(公告)号：US20090001340A1

公开(公告)日：2009-01-01

申请号：US11967446

申请日：2007-12-31

申请人： Tae Young LEE ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

发明人： Tae Young LEE ,  In Kyung Lee ,  Byoung Ho Choi ,  Yong Soon Park

IPC分类号： H01L45/00 ,  C09K13/00 ,  C09K13/04 ,  H01L21/302

CPC分类号： C09G1/04 ,  H01L45/06 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

公开(公告)号：US20080121839A1

公开(公告)日：2008-05-29

申请号：US11615094

申请日：2006-12-22

申请人： Tae Won PARK ,  In Kyung Lee ,  Byoung Ho Choi

发明人： Tae Won PARK ,  In Kyung Lee ,  Byoung Ho Choi

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed are a slurry composition for chemical mechanical polishing and a precursor composition thereof. The polishing slurry composition includes deionized water, abrasive particles, a pH-adjusting agent and a surfactant, wherein the surfactant includes two or more ionic moieties and two or more lipophilic groups. The polishing slurry composition can polish convex surfaces of a semiconductor having a step height at a higher rate than the polishing rate for concave surfaces acting as polishing stop layers of the semiconductor so that the polishing can be self-stopped, reduces the occurrence of surface defects after the polishing process, and has a high degree of polishing planarization and good dispersion stability.

摘要翻译： 公开了一种用于化学机械抛光的浆料组合物及其前体组合物。 抛光浆料组合物包括去离子水，磨料颗粒，pH调节剂和表面活性剂，其中表面活性剂包括两个或多个离子部分和两个或更多个亲脂基团。 抛光浆料组合物可以对作为半导体的抛光停止层的凹面的抛光速率高的阶梯高度的半导体的凸面进行抛光，使得抛光可以自停，减少表面缺陷的发生 在抛光过程之后，并且具有高度的抛光平坦化和良好的分散稳定性。

公开(公告)号：US07695637B2

公开(公告)日：2010-04-13

申请号：US11615094

申请日：2006-12-22

申请人： Tae Won Park ,  In Kyung Lee ,  Byoung Ho Choi

发明人： Tae Won Park ,  In Kyung Lee ,  Byoung Ho Choi

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed are a slurry composition for chemical mechanical polishing and a precursor composition thereof. The polishing slurry composition includes deionized water, abrasive particles, a pH-adjusting agent and a surfactant, wherein the surfactant includes two or more ionic moieties and two or more lipophilic groups. The polishing slurry composition can polish convex surfaces of a semiconductor having a step height at a higher rate than the polishing rate for concave surfaces acting as polishing stop layers of the semiconductor so that the polishing can be self-stopped, reduces the occurrence of surface defects after the polishing process, and has a high degree of polishing planarization and good dispersion stability.

摘要翻译： 公开了一种用于化学机械抛光的浆料组合物及其前体组合物。 抛光浆料组合物包括去离子水，磨料颗粒，pH调节剂和表面活性剂，其中表面活性剂包括两个或多个离子部分和两个或更多个亲脂基团。 抛光浆料组合物可以对作为半导体的抛光停止层的凹面的抛光速率高的阶梯高度的半导体的凸面进行抛光，使得抛光可以自停，减少表面缺陷的发生 在抛光过程之后，并且具有高度的抛光平坦化和良好的分散稳定性。

公开(公告)号：US07708900B2

公开(公告)日：2010-05-04

申请号：US11591274

申请日：2006-11-01

申请人： Jae Hoon Choung ,  In Kyung Lee ,  Won Young Choi ,  Tae Young Lee ,  Ji Chul Yang

发明人： Jae Hoon Choung ,  In Kyung Lee ,  Won Young Choi ,  Tae Young Lee ,  Ji Chul Yang

IPC分类号： C03C15/00 ,  C03C25/68

CPC分类号： H01L21/3212 ,  C09K3/1463 ,  H01L21/31053

摘要： Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same.Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a quaternary ammonium base; and (c) a fluorinated surfactant. In some embodiments, the fluorinated surfactant is a non-ionic perfluoroalkyl sulfonyl compound.Also provided herein are methods of polishing a polycrystalline silicon surface, including providing a slurry composition according to an embodiment of the invention to a polycrystalline silicon surface and performing a CMP process to polish the polycrystalline silicon surface.

摘要翻译： 本文提供了化学机械抛光（CMP）浆料及其制备方法。 本发明的实施方案包括CMP浆料，其包括（a）金属氧化物; （b）季铵碱; 和（c）氟化表面活性剂。 在一些实施方案中，氟化表面活性剂是非离子全氟烷基磺酰基化合物。 本文还提供了抛光多晶硅表面的方法，包括将根据本发明的实施方案的浆料组合物提供给多晶硅表面，并执行CMP工艺以抛光多晶硅表面。

公开(公告)号：US07601273B2

公开(公告)日：2009-10-13

申请号：US11367406

申请日：2006-03-06

申请人： Hyun Soo Roh ,  Tae Won Park ,  Tae Young Lee ,  In Kyung Lee ,  Chin Ho Lee ,  Young Woo Kim ,  Moon Ro Choi ,  Jong Seop Kim

发明人： Hyun Soo Roh ,  Tae Won Park ,  Tae Young Lee ,  In Kyung Lee ,  Chin Ho Lee ,  Young Woo Kim ,  Moon Ro Choi ,  Jong Seop Kim

IPC分类号： C09K13/00

CPC分类号： H01L21/02024 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463

摘要： A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate chelating agent and a phosphate chelating agent, and a method of using the same.

摘要翻译： 1.一种抛光浆料组合物，其含有研磨剂，pH调节剂，水溶性增稠剂和螯合剂，其中所述螯合剂包括乙酸盐螯合剂和磷酸盐螯合剂中的至少一种，以及使用 一样。

公开(公告)号：US09695347B2

公开(公告)日：2017-07-04

申请号：US11965453

申请日：2007-12-27

申请人： Homer Chou ,  Won Lae Kim ,  Jong Il Noh ,  In Kyung Lee ,  Tae Young Lee

发明人： Homer Chou ,  Won Lae Kim ,  Jong Il Noh ,  In Kyung Lee ,  Tae Young Lee

IPC分类号： H01L21/302 ,  H01L21/461 ,  C09K3/14 ,  C09G1/02 ,  C23F3/06 ,  H01L21/321

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1409 ,  C23F3/06 ,  H01L21/3212

摘要： Provided is a slurry composition for chemical mechanical polishing (CMP) of a metal. The slurry composition comprises a copolymer whose average molecular weight is from about 600,000 to about 1,300,000 and whose monomers are acrylic acid and acrylamide in a molar ratio of about 1:30 to about 30:1. The slurry composition exhibits a non-Prestonian behavior to achieve minimized dishing and attain a high degree of planarization.

公开(公告)号：US20080127573A1

公开(公告)日：2008-06-05

申请号：US11616915

申请日：2006-12-28

申请人： Hyun Soo Roh ,  In Kyung Lee

发明人： Hyun Soo Roh ,  In Kyung Lee

IPC分类号： C09K3/14

CPC分类号： C09K3/1463 ,  C09K3/1409

摘要： Disclosed is a slurry composition for final polishing of silicon wafers to achieve mirror surfaces of the wafers. The slurry composition can include deionized water, abrasive particles, a pH-adjusting agent, a water-soluble thickener, an acetylene surfactant, and a heterocyclic amine. The particle diameter of the abrasive particles and the contents of the components can be selected so that the slurry composition can markedly reduce the number of LLS defects having a size larger than about 50 nm formed on the surface of wafers, and greatly reduce the haze and microroughness of wafer surfaces.

摘要翻译： 公开了用于最终抛光硅晶片以实现晶片的镜面的浆料组合物。 浆料组合物可以包括去离子水，磨料颗粒，pH调节剂，水溶性增稠剂，乙炔表面活性剂和杂环胺。 可以选择研磨剂颗粒的粒径和组分的含量，使得浆料组合物可以显着地减少在晶片表面上形成的尺寸大于约50nm的LLS缺陷的数量，并且大大降低了雾度和 晶圆表面的粗糙度。