公开(公告)号：US20110176023A1

公开(公告)日：2011-07-21

申请号：US12984348

申请日：2011-01-04

申请人： Tae-sub Jung ,  Bum-suk Kim ,  Jung-chak Ahn ,  Kyung-ho Lee

发明人： Tae-sub Jung ,  Bum-suk Kim ,  Jung-chak Ahn ,  Kyung-ho Lee

IPC分类号： H04N5/228 ,  H01L31/0232 ,  H01L27/146 ,  H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/14627 ,  H01L27/1464 ,  H04N5/3745

摘要： Unit picture elements including photon-refracting microlenses. A unit picture element may include a photodiode, a metal layer, and a photo-refracting microlens. The photon-refracting microlens may be disposed between the photodiode and the metal layer. The photon-refracting microlens may refract photons reflected by the metal layer to a center portion of the photo diode.

摘要翻译： 单位图像元素包括光子折射微透镜。 单位像素可以包括光电二极管，金属层和光折射微透镜。 光子折射微透镜可以设置在光电二极管和金属层之间。 光子折射微透镜可以将由金属层反射的光子折射到光电二极管的中心部分。

公开(公告)号：US20100006968A1

公开(公告)日：2010-01-14

申请号：US12458011

申请日：2009-06-29

申请人： Kyung-ho Lee ,  Jung-chak Ahn ,  Yi-tae Kim ,  Wook Lee ,  Bum-suk Kim ,  Tae-sub Jung

发明人： Kyung-ho Lee ,  Jung-chak Ahn ,  Yi-tae Kim ,  Wook Lee ,  Bum-suk Kim ,  Tae-sub Jung

IPC分类号： H01L31/0232 ,  H01L31/0224

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/14683

摘要： Provided are image sensors and a methods of manufacturing image sensors. The image sensors may include a substrate, a pixel array region, and a peripheral circuit region. The substrate includes a first region and a second region. The pixel array region may be formed on the first region. The peripheral circuit region may be formed on the second region. The first region may be located higher than the second region. According to the image sensor and the method of manufacturing the same, the vertical height of the pixel array region is decreased as compared to the prior art, and thus the aspect ratio at the pixel array region is minimized. As a result, condensing efficiency the image sensor may be improved.

摘要翻译： 提供图像传感器和制造图像传感器的方法。 图像传感器可以包括基板，像素阵列区域和外围电路区域。 衬底包括第一区域和第二区域。 像素阵列区域可以形成在第一区域上。 外围电路区域可以形成在第二区域上。 第一区域可以位于比第二区域更高的位置。 根据图像传感器及其制造方法，与现有技术相比，像素阵列区域的垂直高度减小，因此像素阵列区域的纵横比最小化。 结果，可以提高图像传感器的冷凝效率。

公开(公告)号：US08629486B2

公开(公告)日：2014-01-14

申请号：US13171946

申请日：2011-06-29

申请人： Jung-chak Ahn ,  Eun-sub Shim ,  Bum-suk Kim ,  Kyung-ho Lee

发明人： Jung-chak Ahn ,  Eun-sub Shim ,  Bum-suk Kim ,  Kyung-ho Lee

IPC分类号： H01L27/146

CPC分类号： H01L27/1462 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/02161 ,  H01L31/1868 ,  Y02E10/50

摘要： A complementary metal-oxide-semiconductor (CMOS) image sensor, including a wiring layer, a photodiode stacked with the wiring layer, a micro-lens stacked on the photodiode, an anti-reflection layer stacked on the photodiode. An anti-absorption layer may be provided between the photodiode and the anti-reflection layer. The photodiode may include a first portion and a second portion. Light may be focused on the first portion by the micro-lens and the second portion may at least partially surround the first portion. A material of the first portion may have a refractive index higher than a refractive index of a material of the second portion. The anti-absorption layer may include a compound semiconductor having an energy band gap greater than an energy band gap of a semiconductor included in the photodiode.

摘要翻译： 包括布线层的互补金属氧化物半导体（CMOS）图像传感器，堆叠有布线层的光电二极管，堆叠在光电二极管上的微透镜，堆叠在光电二极管上的抗反射层。 可以在光电二极管和抗反射层之间设置抗吸收层。 光电二极管可以包括第一部分和第二部分。 光可以通过微透镜聚焦在第一部分上，并且第二部分可以至少部分地围绕第一部分。 第一部分的材料可以具有比第二部分的材料的折射率高的折射率。 抗吸收层可以包括具有比包含在光电二极管中的半导体的能带隙大的能带隙的化合物半导体。

公开(公告)号：US08508013B2

公开(公告)日：2013-08-13

申请号：US13252560

申请日：2011-10-04

申请人： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

发明人： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

摘要： A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

摘要翻译： 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

公开(公告)号：US20120098078A1

公开(公告)日：2012-04-26

申请号：US13252560

申请日：2011-10-04

申请人： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

发明人： Eun-sub Shim ,  Jung-chak Ahn ,  Bum-suk Kim ,  Kyung-ho Lee

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14687

摘要： A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

摘要翻译： 提供一种其中防止相邻像素之间的串扰的背面照明的有源像素传感器阵列，制造背面照射的有源像素传感器阵列的方法以及包括背面照射的有源像素传感器阵列的背面照明的图像传感器。 背面照明有源像素传感器阵列包括第一导电类型的半导体衬底，其包括前表面和后表面，用于响应于经由后表面入射的光而产生电荷的光接收装置，以及一个或多个像素隔离 通过配置在相邻的光接收装置之间形成像素之间的边界的层，设置在半导体衬底的前表面上的布线层和设置在半导体衬底的后表面上的滤光层， 一个或多个像素隔离层从半导体衬底中的一个点向后表面减小。

公开(公告)号：US08563914B2

公开(公告)日：2013-10-22

申请号：US12801196

申请日：2010-05-27

申请人： Jung-chak Ahn ,  Kyung-ho Lee ,  Shay Hamami ,  Young-hwan Park

发明人： Jung-chak Ahn ,  Kyung-ho Lee ,  Shay Hamami ,  Young-hwan Park

IPC分类号： H01L27/146

CPC分类号： H01L27/14609 ,  H04N5/3597 ,  H04N5/363 ,  H04N5/37452

摘要： A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.

摘要翻译： 能够实现浮动扩散区域的完全初始化的单位像素，包括单位像素的像素阵列，以及包括该像素阵列的受光器件。 单位像素包括光电检测器，用于将从光电检测器产生的电荷传输到浮动扩散区域的传输晶体管，用于初始化浮动扩散区域的复位晶体管，以及具有连接到浮动扩散区域的第一端子的升压电容器， 端子，施加升压电压。

公开(公告)号：US20110193147A1

公开(公告)日：2011-08-11

申请号：US12984404

申请日：2011-01-04

申请人： Jung-Chak Ahn ,  Kyung-ho Lee

发明人： Jung-Chak Ahn ,  Kyung-ho Lee

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/1461 ,  H01L27/14645 ,  H01L27/14689

摘要： Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.

摘要翻译： 具有凸形光接收面的背面照明CMOS图像传感器及其制造方法。 背面照明CMOS图像传感器包括金属层，绝缘层和光电二极管。 绝缘层位于金属层上。 光电二极管在绝缘层上，并且接收光的光电二极管的顶面是弯曲的。 包括具有凸表面的光电二极管的背面照明CMOS图像传感器的制造方法包括在光电二极管的受光面的一部分上形成小于光电二极管的岛，并退火该岛以形成具有凸光的光电二极管 接受面孔

公开(公告)号：US08853606B2

公开(公告)日：2014-10-07

申请号：US13213145

申请日：2011-08-19

申请人： Kyung-ho Lee ,  Hoon-sang Oh ,  Jung-chak Ahn

发明人： Kyung-ho Lee ,  Hoon-sang Oh ,  Jung-chak Ahn

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/14641

摘要： An image sensor cell, wherein at least one of a plurality of transistors included in image sensor cell is a recess transistor having a channel region recessed into a substrate. The image sensor cell includes an image charge generating unit for generating an image charge corresponding to an image signal, and an image charge converting unit for converting the image charge into an electrical signal, wherein at least one of a plurality of transistors included in the image charge converting unit is a recess transistor including a channel region that is recessed into a substrate.

摘要翻译： 一种图像传感器单元，其中包括在图像传感器单元中的多个晶体管中的至少一个是具有凹入基板的沟道区域的凹槽晶体管。 图像传感器单元包括用于产生与图像信号对应的图像电荷的图像电荷产生单元和用于将图像电荷转换为电信号的图像电荷转换单元，其中包括在图像中的多个晶体管中的至少一个 电荷转换单元是包括凹入基板的沟道区的凹槽晶体管。

公开(公告)号：US08541857B2

公开(公告)日：2013-09-24

申请号：US12984404

申请日：2011-01-04

申请人： Jung-chak Ahn ,  Kyung-ho Lee

发明人： Jung-chak Ahn ,  Kyung-ho Lee

IPC分类号： H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/1461 ,  H01L27/14645 ,  H01L27/14689

摘要： Backside illumination CMOS image sensors having convex light-receiving faces and methods of manufacturing the same. A backside illumination CMOS image sensor includes a metal layer, an insulating layer and a photodiode. The insulating layer is on the metal layer. The photodiode is on the insulating layer, and a top face of the photodiode, which receives light, is curved. A method of manufacturing a backside illumination CMOS image sensor including a photodiode having a convex surface includes forming an island smaller than the photodiode on a portion of a light-receiving face of the photodiode, and annealing the island to form the photodiode having the convex light-receiving face.

摘要翻译： 具有凸形光接收面的背面照明CMOS图像传感器及其制造方法。 背面照明CMOS图像传感器包括金属层，绝缘层和光电二极管。 绝缘层位于金属层上。 光电二极管在绝缘层上，并且接收光的光电二极管的顶面是弯曲的。 包括具有凸表面的光电二极管的背面照明CMOS图像传感器的制造方法包括在光电二极管的受光面的一部分上形成小于光电二极管的岛，并退火该岛以形成具有凸光的光电二极管 接受面孔

公开(公告)号：US20110298949A1

公开(公告)日：2011-12-08

申请号：US13151794

申请日：2011-06-02

申请人： Kyung-ho Lee ,  Jung-chak Ahn ,  Sang-joo Lee ,  Young-hwan Park ,  Dong-yoon Jang ,  Young-heub Jang

发明人： Kyung-ho Lee ,  Jung-chak Ahn ,  Sang-joo Lee ,  Young-hwan Park ,  Dong-yoon Jang ,  Young-heub Jang

IPC分类号： H04N9/68 ,  H04N5/76

CPC分类号： H04N5/361 ,  H04N5/359 ,  H04N5/3594

摘要： A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.

摘要翻译： 背面照明方式的漏光补偿单元图像传感器包括：光电二极管和存储二极管，其中仅通过形成光电二极管的电极的区域仅接收单元图像传感器背面的光，以及区域 用于形成光电二极管的另一个电极和用于形成存储二极管的两个电极的区域由阱彼此分离，从而补偿光泄漏。