公开(公告)号：US20170222073A1

公开(公告)日：2017-08-03

申请号：US15492382

申请日：2017-04-20

申请人： Taeseok Kim ,  Robert Woehl ,  Gabriel Harley ,  Nils-Peter Harder ,  Jens-Dirk Moschner ,  Matthieu Moors ,  Michel Arsene Olivier Ngamo Toko

发明人： Taeseok Kim ,  Robert Woehl ,  Gabriel Harley ,  Nils-Peter Harder ,  Jens-Dirk Moschner ,  Matthieu Moors ,  Michel Arsene Olivier Ngamo Toko

IPC分类号： H01L31/0224 ,  H01L31/028 ,  H01L31/0368 ,  H01L31/077 ,  H01L31/056 ,  H01L31/0236

CPC分类号： H01L31/022458 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/05 ,  H01L31/0516 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/0745 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/50

摘要： Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.

公开(公告)号：US09634178B1

公开(公告)日：2017-04-25

申请号：US14971335

申请日：2015-12-16

申请人： Taeseok Kim ,  Robert Woehl ,  Gabriel Harley ,  Nils-Peter Harder ,  Jens-Dirk Moschner ,  Matthieu Moors ,  Michel Arsène Olivier Ngamo Toko

发明人： Taeseok Kim ,  Robert Woehl ,  Gabriel Harley ,  Nils-Peter Harder ,  Jens-Dirk Moschner ,  Matthieu Moors ,  Michel Arsène Olivier Ngamo Toko

IPC分类号： H01L31/18 ,  H01L31/05 ,  H01L31/054 ,  H01L31/0368 ,  H01L31/0224

CPC分类号： H01L31/022458 ,  H01L31/022441 ,  H01L31/02366 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03682 ,  H01L31/05 ,  H01L31/0516 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/0745 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/182 ,  Y02E10/50

摘要： Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.

公开(公告)号：US09231129B2

公开(公告)日：2016-01-05

申请号：US14229716

申请日：2014-03-28

申请人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

发明人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC分类号： H01L21/00 ,  H01L31/0224 ,  H01L31/0687 ,  H01L31/02

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

摘要翻译： 描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。 在一个示例中，太阳能电池包括基板。 多个交替的N型和P型半导体区域设置在衬底中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域的上方。 导电接触结构包括多个金属种子材料区域，其提供设置在每个交替的N型和P型半导体区域上的金属种子材料区域。 金属箔设置在多个金属种子材料区域上，金属箔具有阳极化部分，隔离与交替的N型和P型半导体区对应的金属箔的金属区域。

公开(公告)号：US09627566B2

公开(公告)日：2017-04-18

申请号：US14954030

申请日：2015-11-30

申请人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

发明人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC分类号： H01L31/0224 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/05 ,  H01L31/0236 ,  H01L31/0745

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

公开(公告)号：US20160079450A1

公开(公告)日：2016-03-17

申请号：US14954030

申请日：2015-11-30

申请人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

发明人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC分类号： H01L31/0224 ,  H01L31/0475 ,  H01L31/028 ,  H01L31/05

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

公开(公告)号：US20170222068A1

公开(公告)日：2017-08-03

申请号：US15485840

申请日：2017-04-12

申请人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

发明人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC分类号： H01L31/0224 ,  H01L31/0475 ,  H01L31/028 ,  H01L31/05

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

公开(公告)号：US20150280021A1

公开(公告)日：2015-10-01

申请号：US14229716

申请日：2014-03-28

申请人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

发明人： Gabriel Harley ,  Taeseok Kim ,  Richard Hamilton Sewell ,  Michael Morse ,  David D. Smith ,  Matthieu Moors ,  Jens-Dirk Moschner

IPC分类号： H01L31/0224 ,  H01L31/02 ,  H01L31/0687

CPC分类号： H01L31/02245 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0475 ,  H01L31/0512 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/0745 ,  Y02E10/50 ,  Y02E10/547 ,  Y02P70/521

摘要： Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

摘要翻译： 描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。 在一个示例中，太阳能电池包括基板。 多个交替的N型和P型半导体区域设置在衬底中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域的上方。 导电接触结构包括多个金属种子材料区域，其提供设置在每个交替的N型和P型半导体区域上的金属种子材料区域。 金属箔设置在多个金属种子材料区域上，金属箔具有阳极化部分，隔离与交替的N型和P型半导体区对应的金属箔的金属区域。