Bonding structure and semiconductor device manufacturing apparatus
    1.
    发明授权
    Bonding structure and semiconductor device manufacturing apparatus 有权
    接合结构和半导体器件制造装置

    公开(公告)号:US08414704B2

    公开(公告)日:2013-04-09

    申请号:US12349682

    申请日:2009-01-07

    摘要: The present invention relates to a bonding structure, including: a ceramic member including a hole; a terminal embedded in the ceramic member, an exposed surface exposed to a bottom portion of the hole, and made of a refractory metal having a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic member; a brazed bond layer including a first tantalum layer in contact with the exposed surface of the terminal, a gold layer formed on the first tantalum layer, and a second tantalum layer formed on the gold layer; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of a refractory metal having a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the ceramic member.

    摘要翻译: 本发明涉及一种接合结构,包括:陶瓷构件,其包括孔; 嵌入在所述陶瓷构件中的端子,暴露于所述孔的底部的暴露表面,并且由具有基本上等于所述陶瓷构件的热膨胀系数的热膨胀系数的耐热金属制成; 包括与端子的暴露表面接触的第一钽层,形成在第一钽层上的金层和形成在金层上的第二钽层的钎焊接合层; 以及插入孔中的连接构件,其通过钎焊接合层接合到端子,并且由具有基本上等于陶瓷构件的热膨胀系数的热膨胀系数的难熔金属制成。

    BONDING STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS
    2.
    发明申请
    BONDING STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
    粘结结构和半导体器件制造设备

    公开(公告)号:US20090173449A1

    公开(公告)日:2009-07-09

    申请号:US12349693

    申请日:2009-01-07

    IPC分类号: B32B37/00

    摘要: A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.

    摘要翻译: 根据本发明的接合结构包括:陶瓷构件,其包括孔; 嵌入在所述陶瓷构件中并包括暴露于所述孔的底部的暴露表面的端子; 形成为与端子的暴露表面接触的钎焊接合层; 以及插入孔中的连接构件,并通过钎焊接合层与端子接合。 孔的内径大于连接构件的外径。 当连接构件插入孔中时,在孔和连接构件之间形成间隙。 钎焊池空间形成在孔的表面中,并且在横截面中具有大致半圆形形状。 钎焊池空间部分填充有钎焊材料。

    Bonding structure and semiconductor device manufacturing apparatus
    3.
    发明授权
    Bonding structure and semiconductor device manufacturing apparatus 有权
    接合结构和半导体器件制造装置

    公开(公告)号:US08480806B2

    公开(公告)日:2013-07-09

    申请号:US12349693

    申请日:2009-01-07

    IPC分类号: B32B37/00 C23C16/00 B23B31/28

    摘要: A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.

    摘要翻译: 根据本发明的接合结构包括:陶瓷构件,其包括孔; 嵌入在所述陶瓷构件中并包括暴露于所述孔的底部的暴露表面的端子; 形成为与端子的暴露表面接触的钎焊接合层; 以及插入孔中的连接构件,并通过钎焊接合层与端子接合。 孔的内径大于连接构件的外径。 当连接构件插入孔中时,在孔和连接构件之间形成间隙。 钎焊池空间形成在孔的表面中,并且在横截面中具有大致半圆形形状。 钎焊池空间部分填充有钎焊材料。

    BONDING STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS
    5.
    发明申请
    BONDING STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
    粘结结构和半导体器件制造设备

    公开(公告)号:US20090173448A1

    公开(公告)日:2009-07-09

    申请号:US12349682

    申请日:2009-01-07

    IPC分类号: B32B37/00

    摘要: The present invention relates to a bonding structure, including: a ceramic member including a hole; a terminal embedded in the ceramic member, an exposed surface exposed to a bottom portion of the hole, and made of a refractory metal having a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic member; a brazed bond layer including a first tantalum layer in contact with the exposed surface of the terminal, a gold layer formed on the first tantalum layer, and a second tantalum layer formed on the gold layer; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of a refractory metal having a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the ceramic member.

    摘要翻译: 本发明涉及一种接合结构,包括:陶瓷构件,其包括孔; 嵌入在所述陶瓷构件中的端子,暴露于所述孔的底部的暴露表面,并且由具有基本上等于所述陶瓷构件的热膨胀系数的热膨胀系数的耐热金属制成; 包括与端子的暴露表面接触的第一钽层,形成在第一钽层上的金层和形成在金层上的第二钽层的钎焊接合层; 以及插入孔中的连接构件,其通过钎焊接合层接合到端子,并且由具有基本上等于陶瓷构件的热膨胀系数的热膨胀系数的难熔金属制成。

    HOT-DIP GALVANIZED COLD-ROLLED STEEL SHEET AND PROCESS FOR PRODUCING SAME
    8.
    发明申请
    HOT-DIP GALVANIZED COLD-ROLLED STEEL SHEET AND PROCESS FOR PRODUCING SAME 审中-公开
    热镀锌冷轧钢板及其制造方法

    公开(公告)号:US20140212686A1

    公开(公告)日:2014-07-31

    申请号:US14130530

    申请日:2012-06-29

    IPC分类号: C23C2/02 C21D8/02

    摘要: A hot-dip galvanized cold-rolled steel sheet has a tensile strength of 750 MPa or higher, a composition consisting, in mass percent, of C: more than 0.10% and less than 0.25%, Si: more than 0.50% and less than 2.0%, Mn: more than 1.50% and 3.0% or less, and optionally containing one or more types of Ti, Nb, V, Cr, Mo, B, Ca, Mg, REM, and Bi, P: less than 0.050%, S: 0.010% or less, sol. Al: 0.50% or less, and N: 0.010% or less, and a main phase as a low-temperature transformation product and a second phase as retained austenite. The retained austenite volume fraction is more than 4.0% and less than 25.0% of the whole structure, and has an average grain size of less than 0.80 □m. A number density of retained austenite grains having a grain size of 1.2 □m or more is 3.0□10−2/□m2 or less.

    摘要翻译: 热浸镀锌冷轧钢板的拉伸强度为750MPa以上,以质量%计,C:0.10以上且小于0.25%的Si:超过0.50%以下 2.0%,Mn:大于1.50%和3.0%以下,并且任选地含有一种或多种Ti,Nb,V,Cr,Mo,B,Ca,Mg,REM和Bi,P:小于0.050% ,S:0.010%以下,溶胶。 Al:0.50%以下,N:0.010%以下,作为低温相变产物的主相和作为残留奥氏体的第二相。 残留奥氏体体积分数大于整个结构的4.0%以上且小于25.0%,平均粒径小于0.80μm。 晶粒尺寸为1.2μm以上的残留奥氏体晶粒的数密度为3.0×10 -2 /□m 2以下。