摘要:
The present invention relates to a bonding structure, including: a ceramic member including a hole; a terminal embedded in the ceramic member, an exposed surface exposed to a bottom portion of the hole, and made of a refractory metal having a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic member; a brazed bond layer including a first tantalum layer in contact with the exposed surface of the terminal, a gold layer formed on the first tantalum layer, and a second tantalum layer formed on the gold layer; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of a refractory metal having a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the ceramic member.
摘要:
A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.
摘要:
A bonding structure including: a ceramic member made of aluminum nitride and including a hole; a terminal embedded in the ceramic member, exposed to a bottom surface of the hole, and made of molybdenum; a brazed bond layer consisting of gold (Au) only; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of molybdenum.
摘要:
A bonding structure according to the present invention includes: a ceramic member made of aluminum nitride and including a hole; a terminal embedded in the ceramic member, exposed to a bottom surface of the hole, and made of molybdenum; a brazed bond layer consisted of gold (Au) only; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of molybdenum.
摘要:
The present invention relates to a bonding structure, including: a ceramic member including a hole; a terminal embedded in the ceramic member, an exposed surface exposed to a bottom portion of the hole, and made of a refractory metal having a thermal expansion coefficient substantially equal to a thermal expansion coefficient of the ceramic member; a brazed bond layer including a first tantalum layer in contact with the exposed surface of the terminal, a gold layer formed on the first tantalum layer, and a second tantalum layer formed on the gold layer; and a connecting member inserted in the hole, bonded to the terminal via the brazed bond layer, and made of a refractory metal having a thermal expansion coefficient substantially equal to the thermal expansion coefficient of the ceramic member.
摘要:
A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.
摘要:
A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要:
A joint structure joins an electronic element 12 included in an electronic component to an electrode 14 included in that electronic component. The joint structure includes a solder layer, which contains 0.2 to 6% by weight of copper, 0.02 to 0.2% by weight of germanium and 93.8 to 99.78% by weight of bismuth, a nickel layer provided between the solder layer and the electrode, and a barrier layer provided between the nickel layer and the solder layer. Here, the barrier layer is formed so as to have an average thickness of from 0.5 to 4.5 μm after the electronic element and the electrode are joined by the solder layer.