公开(公告)号：US11855022B2

公开(公告)日：2023-12-26

申请号：US17854840

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan Huang ,  Hui-Chi Chen ,  Kuo-Chin Chang ,  Chien-Huang Yeh ,  Hong-Seng Shue ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/498 ,  H01L23/522

CPC classification number: H01L24/06 ,  H01L21/4814 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/49816 ,  H01L23/5223 ,  H01L24/02 ,  H01L24/05 ,  H01L24/07 ,  H01L24/10 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/05008 ,  H01L2224/05015 ,  H01L2224/05555 ,  H01L2224/0603 ,  H01L2224/16227

Abstract: Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

公开(公告)号：US20210091029A1

公开(公告)日：2021-03-25

申请号：US17114112

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan Huang ,  Hui-Chi Chen ,  Kuo-Chin Chang ,  Chien-Huang Yeh ,  Hong-Seng Shue ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC: H01L23/00 ,  H01L21/48

Abstract: Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

公开(公告)号：US10861810B2

公开(公告)日：2020-12-08

申请号：US16392024

申请日：2019-04-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan Huang ,  Hui-Chi Chen ,  Kuo-Chin Chang ,  Chien-Huang Yeh ,  Hong-Seng Shue ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC: H01L23/00 ,  H01L21/48

Abstract: Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

公开(公告)号：US20220328440A1

公开(公告)日：2022-10-13

申请号：US17854840

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan Huang ,  Hui-Chi Chen ,  Kuo-Chin Chang ,  Chien-Huang Yeh ,  Hong-Seng Shue ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC: H01L23/00 ,  H01L21/48

Abstract: Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

公开(公告)号：US11380639B2

公开(公告)日：2022-07-05

申请号：US17114112

申请日：2020-12-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan Huang ,  Hui-Chi Chen ,  Kuo-Chin Chang ,  Chien-Huang Yeh ,  Hong-Seng Shue ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC: H01L23/00 ,  H01L21/48

Abstract: Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.

公开(公告)号：US20200168574A1

公开(公告)日：2020-05-28

申请号：US16392024

申请日：2019-04-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Fan Huang ,  Hui-Chi Chen ,  Kuo-Chin Chang ,  Chien-Huang Yeh ,  Hong-Seng Shue ,  Dian-Hau Chen ,  Yen-Ming Chen

IPC: H01L23/00 ,  H01L23/522

Abstract: Semiconductor device packages and method are provided. A semiconductor device package according to the present disclosure includes a substrate including a first region, a passive device disposed over the first region of the substrate, a contact pad disposed over the passive device, a passivation layer disposed over the contact pad, a recess through the passivation layer, and an under-bump metallization (UBM) layer. The recess exposes the contact pad and the UBM layer includes an upper portion disposed over the passivation layer and a lower portion disposed over a sidewall of the recess. A projection of the upper portion of the UBM layer along a direction perpendicular to the substrate falls within an area of the contact pad.