公开(公告)号：US12068322B2

公开(公告)日：2024-08-20

申请号：US17161978

申请日：2021-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Yu Tang ,  Hung-Tai Chang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/04 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78

CPC classification number: H01L27/0924 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823468 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851 ,  H01L21/823814 ,  H01L29/7848

Abstract: An embodiment includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes a first epitaxial source/drain region in the first fin and adjacent the first gate spacer, an outer surface of the epitaxial first source/drain region having more than eight facets in a first plane, the first plane being orthogonal to a top surface of the substrate.

公开(公告)号：US11688807B2

公开(公告)日：2023-06-27

申请号：US17216052

申请日：2021-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Tai Chang ,  Han-Yu Tang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L29/7839 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

公开(公告)号：US20240371996A1

公开(公告)日：2024-11-07

申请号：US18775943

申请日：2024-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Tai Chang ,  Han-Yu Tang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

公开(公告)号：US20230282746A1

公开(公告)日：2023-09-07

申请号：US18317514

申请日：2023-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Tai Chang ,  Han-Yu Tang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L21/8238

CPC classification number: H01L29/7839 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66795 ,  H01L21/823821 ,  H01L21/823814 ,  H01L29/66545 ,  H01L29/7851

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

公开(公告)号：US12243745B2

公开(公告)日：2025-03-04

申请号：US17656921

申请日：2022-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Yu Tang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L21/02 ,  B23K26/06 ,  B23K26/08 ,  B23K26/362 ,  B23K26/402 ,  G02B27/09 ,  H01L21/263 ,  B23K103/00

Abstract: A method includes forming a plurality of semiconductor regions on a wafer, placing the wafer in an etching chamber, globally heating the wafer using a heating source, and projecting a laser beam on the wafer. When the wafer is heated by both of the heating source and the laser beam, the plurality of semiconductor regions on the wafer are etched.

公开(公告)号：US12119401B2

公开(公告)日：2024-10-15

申请号：US18317514

申请日：2023-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Tai Chang ,  Han-Yu Tang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66

CPC classification number: H01L29/7839 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.

公开(公告)号：US20230253207A1

公开(公告)日：2023-08-10

申请号：US17656921

申请日：2022-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Han-Yu Tang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L21/263 ,  H01L21/02 ,  G02B27/09 ,  B23K26/362 ,  B23K26/402 ,  B23K26/08 ,  B23K26/06

CPC classification number: H01L21/2633 ,  H01L21/0262 ,  G02B27/0955 ,  B23K26/362 ,  B23K26/402 ,  B23K26/0823 ,  B23K26/0608 ,  B23K26/0665 ,  B23K2103/56

Abstract: A method includes forming a plurality of semiconductor regions on a wafer, placing the wafer in an etching chamber, globally heating the wafer using a heating source, and projecting a laser beam on the wafer. When the wafer is heated by both of the heating source and the laser beam, the plurality of semiconductor regions on the wafer are etched.

公开(公告)号：US20220246611A1

公开(公告)日：2022-08-04

申请号：US17161978

申请日：2021-01-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Han-Yu Tang ,  Hung-Tai Chang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L27/092 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234

Abstract: An embodiment includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes a first epitaxial source/drain region in the first fin and adjacent the first gate spacer, an outer surface of the epitaxial first source/drain region having more than eight facets in a first plane, the first plane being orthogonal to a top surface of the substrate.

公开(公告)号：US20220131006A1

公开(公告)日：2022-04-28

申请号：US17216052

申请日：2021-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung-Tai Chang ,  Han-Yu Tang ,  Ming-Hua Yu ,  Yee-Chia Yeo

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/66

Abstract: In an embodiment, a device includes a first fin extending from a substrate. The device also includes a first gate stack over and along sidewalls of the first fin. The device also includes a first gate spacer disposed along a sidewall of the first gate stack. The device also includes and a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region including a first epitaxial layer on the first fin, the first epitaxial layer having a first dopant concentration of boron. The device also includes and a second epitaxial layer on the first epitaxial layer, the second epitaxial layer having a second dopant concentration of boron, the second dopant concentration being greater than the first dopant concentration.