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公开(公告)号:US12183581B2
公开(公告)日:2024-12-31
申请号:US18358609
申请日:2023-07-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hongfa Luan , Yi-Fan Chen , Chun-Yen Peng , Cheng-Po Chau , Wen-Yu Ku , Huicheng Chang
IPC: H01L21/28 , H01L21/225 , H01L21/306 , H01L21/3105 , H01L21/8234 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/51 , H01L29/66 , H01L29/78 , H01L29/417
Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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公开(公告)号:US20210202255A1
公开(公告)日:2021-07-01
申请号:US17201073
申请日:2021-03-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hongfa Luan , Yi-Fan Chen , Chun-Yen Peng , Cheng-Po Chau , Wen-Yu Ku , Huicheng Chang
IPC: H01L21/28 , H01L29/78 , H01L29/66 , H01L21/225 , H01L29/51 , H01L21/306 , H01L21/3105 , H01L21/8234 , H01L29/08 , H01L29/40 , H01L29/423
Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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3.
公开(公告)号:US20200013623A1
公开(公告)日:2020-01-09
申请号:US16568585
申请日:2019-09-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hongfa Luan , Yi-Fan Chen , Chun-Yen Peng , Cheng-Po Chau , Wen-Yu Ku , Huicheng Chang
IPC: H01L21/28 , H01L29/51 , H01L29/423 , H01L29/78 , H01L29/66 , H01L21/8234 , H01L29/40 , H01L29/08 , H01L21/306 , H01L21/3105
Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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公开(公告)号:US10714348B2
公开(公告)日:2020-07-14
申请号:US16568585
申请日:2019-09-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hongfa Luan , Yi-Fan Chen , Chun-Yen Peng , Cheng-Po Chau , Wen-Yu Ku , Huicheng Chang
IPC: H01L21/28 , H01L29/78 , H01L29/66 , H01L21/225 , H01L29/51 , H01L21/306 , H01L21/3105 , H01L21/8234 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/417
Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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5.
公开(公告)号:US20230386847A1
公开(公告)日:2023-11-30
申请号:US18358609
申请日:2023-07-25
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hongfa Luan , Yi-Fan Chen , Chun-Yen Peng , Cheng-Po Chau , Wen-Yu Ku , Huicheng Chang
IPC: H01L21/28 , H01L29/78 , H01L29/66 , H01L21/225 , H01L29/51 , H01L21/306 , H01L21/3105 , H01L21/8234 , H01L29/08 , H01L29/40 , H01L29/423
CPC classification number: H01L21/28185 , H01L21/28176 , H01L29/785 , H01L29/66477 , H01L21/2254 , H01L29/517 , H01L29/66545 , H01L21/30604 , H01L21/31053 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L21/823462 , H01L21/823468 , H01L29/0847 , H01L29/401 , H01L29/42364 , H01L29/66636 , H01L29/66795 , H01L29/7851 , H01L29/513 , H01L29/41791
Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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公开(公告)号:US11776814B2
公开(公告)日:2023-10-03
申请号:US17201073
申请日:2021-03-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hongfa Luan , Yi-Fan Chen , Chun-Yen Peng , Cheng-Po Chau , Wen-Yu Ku , Huicheng Chang
IPC: H01L21/28 , H01L29/78 , H01L29/66 , H01L21/225 , H01L29/51 , H01L21/306 , H01L21/3105 , H01L21/8234 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/417
CPC classification number: H01L21/28185 , H01L21/2254 , H01L21/28176 , H01L21/30604 , H01L21/31053 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L21/823462 , H01L21/823468 , H01L29/0847 , H01L29/401 , H01L29/42364 , H01L29/517 , H01L29/66477 , H01L29/66545 , H01L29/66636 , H01L29/66795 , H01L29/785 , H01L29/7851 , H01L29/41791 , H01L29/513
Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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公开(公告)号:US10950447B2
公开(公告)日:2021-03-16
申请号:US16907889
申请日:2020-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hongfa Luan , Yi-Fan Chen , Chun-Yen Peng , Cheng-Po Chau , Wen-Yu Ku , Huicheng Chang
IPC: H01L21/28 , H01L29/78 , H01L29/66 , H01L21/225 , H01L29/51 , H01L21/306 , H01L21/3105 , H01L21/8234 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/417
Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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公开(公告)号:US20200321216A1
公开(公告)日:2020-10-08
申请号:US16907889
申请日:2020-06-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hongfa Luan , Yi-Fan Chen , Chun-Yen Peng , Cheng-Po Chau , Wen-Yu Ku , Huicheng Chang
IPC: H01L21/28 , H01L29/78 , H01L29/66 , H01L21/225 , H01L29/51 , H01L21/306 , H01L21/3105 , H01L21/8234 , H01L29/08 , H01L29/40 , H01L29/423
Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.
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