公开(公告)号：US10714348B2

公开(公告)日：2020-07-14

申请号：US16568585

申请日：2019-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US10535557B2

公开(公告)日：2020-01-14

申请号：US16371847

申请日：2019-04-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsan-Chun Wang ,  De-Wei Yu ,  Ziwei Fang ,  Yi-Fan Chen

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/265 ,  H01L21/324 ,  H01L29/66 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/088 ,  H01L29/417 ,  H01L23/48

Abstract: A method of forming a semiconductor device includes depositing a flowable dielectric layer on a substrate and annealing the flowable dielectric layer. The method further includes performing a high temperature (HT) doping process on the flowable dielectric layer. The HT doping process may include implanting dopant ions into the flowable dielectric layer and heating the substrate during the implanting of the dopant ions. The heating of the substrate may include heating a substrate holder upon which the substrate is disposed and maintaining the substrate at a temperature above 100° C. An example benefit reduced the wet etch rate (WER) of the flowable dielectric layer.

公开(公告)号：US10249530B2

公开(公告)日：2019-04-02

申请号：US15473166

申请日：2017-03-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsan-Chun Wang ,  De-Wei Yu ,  Ziwei Fang ,  Yi-Fan Chen

IPC: H01L29/78 ,  H01L21/768 ,  H01L21/265 ,  H01L21/3105 ,  H01L21/324 ,  H01L29/66 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/088 ,  H01L29/417 ,  H01L21/02 ,  H01L23/48

Abstract: A method of forming a semiconductor device includes depositing a flowable dielectric layer on a substrate and annealing the flowable dielectric layer. The method further includes performing a high temperature (HT) doping process on the flowable dielectric layer. The HT doping process may include implanting dopant ions into the flowable dielectric layer and heating the substrate during the implanting of the dopant ions. The heating of the substrate may include heating a substrate holder upon which the substrate is disposed and maintaining the substrate at a temperature above 100° C. An example benefit reduced the wet etch rate (WER) of the flowable dielectric layer.

公开(公告)号：US20230386847A1

公开(公告)日：2023-11-30

申请号：US18358609

申请日：2023-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L21/28185 ,  H01L21/28176 ,  H01L29/785 ,  H01L29/66477 ,  H01L21/2254 ,  H01L29/517 ,  H01L29/66545 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823468 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/513 ,  H01L29/41791

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US11776814B2

公开(公告)日：2023-10-03

申请号：US17201073

申请日：2021-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L21/28185 ,  H01L21/2254 ,  H01L21/28176 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823468 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/41791 ,  H01L29/513

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US10950447B2

公开(公告)日：2021-03-16

申请号：US16907889

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US20200321216A1

公开(公告)日：2020-10-08

申请号：US16907889

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US12183581B2

公开(公告)日：2024-12-31

申请号：US18358609

申请日：2023-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L21/225 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US20210202255A1

公开(公告)日：2021-07-01

申请号：US17201073

申请日：2021-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US20200013623A1

公开(公告)日：2020-01-09

申请号：US16568585

申请日：2019-09-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC: H01L21/28 ,  H01L29/51 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/08 ,  H01L21/306 ,  H01L21/3105

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.