公开(公告)号：US10714348B2

公开(公告)日：2020-07-14

申请号：US16568585

申请日：2019-09-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

摘要： Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US20150147826A1

公开(公告)日：2015-05-28

申请号：US14091630

申请日：2013-11-27

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Weibo Yu ,  Wen-Yu Ku ,  Kuo-Sheng Chuang ,  Chin-Hsiang Lin

IPC分类号： H01L21/66 ,  G01N21/21 ,  H01L21/677 ,  H01L21/02 ,  H01L21/306 ,  G01B11/06 ,  H01L21/67

CPC分类号： H01L21/30604 ,  G01B11/0641 ,  G01N2201/025 ,  G01N2201/061 ,  H01L21/67253 ,  H01L22/12 ,  H01L22/20

摘要： An integrated system operation method is disclosed that includes the following steps: the film of a substrate is measured by a metrology apparatus to obtain a film information. The substrate is moved from the metrology apparatus to a process apparatus adjacent to the transfer apparatus. The film information is sent to the process apparatus. A film treatment is applied to the substrate in accordance with the film information.

摘要翻译： 公开了一种集成系统操作方法，其包括以下步骤：通过计量装置测量基板的膜以获得胶片信息。 基板从计量装置移动到与传送装置相邻的处理装置。 电影信息被发送到处理装置。 根据胶片信息对基材进行胶片处理。

公开(公告)号：US11784065B2

公开(公告)日：2023-10-10

申请号：US16404533

申请日：2019-05-06

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Manish Kumar Singh ,  Bo-Wei Chou ,  Jui-Ming Shih ,  Wen-Yu Ku ,  Ping-Jung Huang ,  Pi-Chun Yu

IPC分类号： H01L21/67 ,  H01L21/311

CPC分类号： H01L21/6708 ,  H01L21/67086 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/31111

摘要： A method includes rotating a wafer, dispensing a liquid from a center of the wafer to an edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

公开(公告)号：US20210202255A1

公开(公告)日：2021-07-01

申请号：US17201073

申请日：2021-03-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

摘要： Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US20200013623A1

公开(公告)日：2020-01-09

申请号：US16568585

申请日：2019-09-12

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC分类号： H01L21/28 ,  H01L29/51 ,  H01L29/423 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/08 ,  H01L21/306 ,  H01L21/3105

摘要： Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US09776216B2

公开(公告)日：2017-10-03

申请号：US14092533

申请日：2013-11-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Weibo Yu ,  Kuo-Sheng Chuang ,  Wen-Yu Ku ,  Chin-Hsiang Lin

IPC分类号： B08B3/02 ,  B08B17/02 ,  H01L21/67 ,  B05B15/02

CPC分类号： B08B3/02 ,  B05B15/555 ,  B08B17/025 ,  H01L21/67051

摘要： A dispensing method is disclosed that includes the following steps: a cleaning sleeve is provided to surround a spray member. A first fluid is previously dispensed from a first fluid outlet of the spray member. A second fluid is sprayed from a second fluid outlet of the cleaning sleeve to clean the spray member. The cleaning sleeve is opened or slid away from the spray member, such that the first fluid outlet of the spray member is exposed to a substrate. The first fluid is dispensed from the first fluid outlet of the spray member to the substrate.

公开(公告)号：US20230386847A1

公开(公告)日：2023-11-30

申请号：US18358609

申请日：2023-07-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

CPC分类号： H01L21/28185 ,  H01L21/28176 ,  H01L29/785 ,  H01L29/66477 ,  H01L21/2254 ,  H01L29/517 ,  H01L29/66545 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823468 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/513 ,  H01L29/41791

摘要： Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US11776814B2

公开(公告)日：2023-10-03

申请号：US17201073

申请日：2021-03-15

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

CPC分类号： H01L21/28185 ,  H01L21/2254 ,  H01L21/28176 ,  H01L21/30604 ,  H01L21/31053 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823437 ,  H01L21/823462 ,  H01L21/823468 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/41791 ,  H01L29/513

摘要： Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US10950447B2

公开(公告)日：2021-03-16

申请号：US16907889

申请日：2020-06-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

摘要： Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

公开(公告)号：US20200321216A1

公开(公告)日：2020-10-08

申请号：US16907889

申请日：2020-06-22

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hongfa Luan ,  Yi-Fan Chen ,  Chun-Yen Peng ,  Cheng-Po Chau ,  Wen-Yu Ku ,  Huicheng Chang

IPC分类号： H01L21/28 ,  H01L29/78 ,  H01L29/66 ,  H01L21/225 ,  H01L29/51 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/40 ,  H01L29/423

摘要： Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.