公开(公告)号：US20160372421A1

公开(公告)日：2016-12-22

申请号：US14743926

申请日：2015-06-18

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jun-Nan NIAN ,  Shiu-Ko JANGJIAN ,  Chi-Cheng HUNG ,  Yu-Sheng WANG ,  Hung-Hsu CHEN

IPC: H01L23/532 ,  H01L21/288 ,  H01L21/768 ,  B32B15/01

CPC classification number: H01L23/53238 ,  B32B15/01 ,  H01L21/2885 ,  H01L21/76877

Abstract: A copper layer structure includes a first copper layer, a second copper layer and a carbon-rich copper layer. The second copper layer is disposed over the first copper layer. The carbon-rich copper layer is sandwiched between the first copper layer and the second copper layer. A carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer.

Abstract translation: 铜层结构包括第一铜层，第二铜层和富碳铜层。 第二铜层设置在第一铜层上。 富碳铜层夹在第一铜层和第二铜层之间。 富碳铜层的碳浓度大于第一铜层的碳浓度和第二铜层的碳浓度。

公开(公告)号：US20190273147A1

公开(公告)日：2019-09-05

申请号：US15909838

申请日：2018-03-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Wen CHENG ,  Cheng-Tung LIN ,  Chih-Wei CHANG ,  Hong-Mao LEE ,  Ming-Hsing TSAI ,  Sheng-Hsuan LIN ,  Wei-Jung LIN ,  Yan-Ming TSAI ,  Yu-Shiuan WANG ,  Hung-Hsu CHEN ,  Wei-Yip LOH ,  Ya-Yi CHENG

IPC: H01L29/66 ,  H01L29/08 ,  H01L29/45 ,  H01L21/768 ,  H01L21/02 ,  H01L21/326 ,  H01L29/78

Abstract: Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.

公开(公告)号：US20190273023A1

公开(公告)日：2019-09-05

申请号：US15909762

申请日：2018-03-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Yip LOH ,  Chih-Wei CHANG ,  Hong-Mao LEE ,  Chun-Hsien HUANG ,  Yu-Ming HUANG ,  Yan-Ming TSAI ,  Yu-Shiuan WANG ,  Hung-Hsu CHEN ,  Yu-Kai CHEN ,  Yu-Wen CHENG

IPC: H01L21/768 ,  H01L21/8234 ,  H01L29/08 ,  H01L23/522

Abstract: Generally, examples are provided relating to conductive features that include a barrier layer, and to methods thereof. In an embodiment, a metal layer is deposited in an opening through a dielectric layer(s) to a source/drain region. The metal layer is along the source/drain region and along a sidewall of the dielectric layer(s) that at least partially defines the opening. The metal layer is nitrided, which includes performing a multiple plasma process that includes at least one directional-dependent plasma process. A portion of the metal layer remains un-nitrided by the multiple plasma process. A silicide region is formed, which includes reacting the un-nitrided portion of the metal layer with a portion of the source/drain region. A conductive material is disposed in the opening on the nitrided portions of the metal layer.

公开(公告)号：US20180138128A1

公开(公告)日：2018-05-17

申请号：US15870810

申请日：2018-01-12

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Jun-Nan NIAN ,  Shiu-Ko JANGJIAN ,  Chi-Cheng HUNG ,  Yu-Sheng WANG ,  Hung-Hsu CHEN

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/288 ,  B32B15/01

CPC classification number: H01L23/53238 ,  B32B15/01 ,  C25D3/38 ,  C25D5/02 ,  C25D5/10 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877

Abstract: In a method for manufacturing an interconnect structure, a dielectric layer is removed to form a first recess and a second recess. The first recess is below the second recess. A first metal layer is deposited to fill the first recess and a first portion of the second recess. A carbon-containing layer is deposited over the first metal layer to fill a second portion of the second recess, which is over the first portion. A second metal layer is deposited over the carbon-containing layer to fill a third portion of the second recess, which is over the second portion. A carbon concentration of the carbon-containing layer is greater than a carbon concentration of the first metal layer and a carbon concentration of the second metal layer, and the carbon concentration of the first metal layer is substantially the same as the carbon concentration of the second metal layer.