公开(公告)号：US09818648B2

公开(公告)日：2017-11-14

申请号：US15236765

申请日：2016-08-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Yi-Cheng Chao ,  Chai-Wei Chang ,  Po-Chi Wu ,  Jung-Jui Li

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/308 ,  H01L21/762

CPC classification number: H01L21/823431 ,  H01L21/3081 ,  H01L21/76224 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0642 ,  H01L29/0657 ,  H01L29/6681

Abstract: Methods for forming the fin field effect transistor (FinFET) device structure are provided. The method includes forming first fin structures and second fin structures on a first region and a second region of a substrate, respectively, and a number of the first fin structures is greater than a number of the second fin structures. The method also includes forming a sacrificial layer on the first fin structures and the second fin structures and performing an etching process to the sacrificial layer to form an isolation structure on the substrate.

公开(公告)号：US09660084B2

公开(公告)日：2017-05-23

申请号：US14851485

申请日：2015-09-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC: H01L21/02 ,  H01L21/30 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L29/0653 ,  H01L29/66545 ,  H01L29/66795

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

公开(公告)号：US09418994B1

公开(公告)日：2016-08-16

申请号：US14737099

申请日：2015-06-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Cheng Chao ,  Chai-Wei Chang ,  Po-Chi Wu ,  Jung-Jui Li

IPC: H01L27/00 ,  H01L29/00 ,  H01L21/00 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/308 ,  H01L21/02 ,  H01L21/8234

CPC classification number: H01L21/823431 ,  H01L21/3081 ,  H01L21/76224 ,  H01L21/823456 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0642 ,  H01L29/0657 ,  H01L29/6681

Abstract: A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate, and the substrate includes a first region and a second region. The FinFET device structure includes an isolation structure formed on the substrate and first fin structures formed on the first region. The FinFET device structure also includes second fin structures formed on the second region, and the number of the first fin structures is greater than the number of the second fin structures. The first fin structures have a first height, the second fin structures have a second height, and a gap between the first height and the second height is in a range from about 0.4 nm to about 4 nm.

Abstract translation: 提供了一种翅片场设备结构及其形成方法。 FinFET器件结构包括衬底，并且衬底包括第一区域和第二区域。 FinFET器件结构包括形成在衬底上的隔离结构和形成在第一区域上的第一鳍结构。 FinFET器件结构还包括形成在第二区域上的第二鳍结构，并且第一鳍结构的数量大于第二鳍结构的数量。 第一翅片结构具有第一高度，第二翅片结构具有第二高度，并且第一高度与第二高度之间的间隙在约0.4nm至约4nm的范围内。

公开(公告)号：US20210013338A1

公开(公告)日：2021-01-14

申请号：US17034176

申请日：2020-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

公开(公告)号：US10312149B1

公开(公告)日：2019-06-04

申请号：US15810831

申请日：2017-11-13

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Yi-Cheng Chao ,  Chai-Wei Chang ,  Po-Chi Wu ,  Jung-Jui Li

IPC: H01L21/8234 ,  H01L29/66

Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET structure includes a substrate, and the substrate includes a first region and a second region. The FinFET structure includes a first plurality of fin structures formed on the first region and a second plurality of fin structures formed on the second region. A density of the first plurality of fin structures is greater than a density of the second plurality of fin structures. The FinFET structure also includes a plurality of protruding structures between two adjacent second plurality of fin structures in the second region and an isolation structure formed on the substrate. The isolation structure has a gap height between the first plurality of fin structures and the second plurality of fin structures.

公开(公告)号：US09704719B2

公开(公告)日：2017-07-11

申请号：US13942906

申请日：2013-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Jui Li

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/762

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/76224

Abstract: A method of fabricating a semiconductor device is disclosed. A substrate having an oxide layer is provided. At least a portion of the oxide layer is removed and forms a nitride layer. The nitride layer is removed, leaving nitride precipitates. The nitride precipitates are removed using phosphoric acid.

公开(公告)号：US11532748B2

公开(公告)日：2022-12-20

申请号：US17034176

申请日：2020-09-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

公开(公告)号：US10090396B2

公开(公告)日：2018-10-02

申请号：US14831409

申请日：2015-08-20

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC: H01L21/8234 ,  H01L29/49 ,  H01L21/28 ,  H01L21/321 ,  H01L21/3213 ,  H01L29/78 ,  H01L21/02

Abstract: A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.

公开(公告)号：US20150024600A1

公开(公告)日：2015-01-22

申请号：US13942906

申请日：2013-07-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jung-Jui Li

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/0206 ,  H01L21/76224

Abstract: A method of fabricating a semiconductor device is disclosed. A substrate having an oxide layer is provided. At least a portion of the oxide layer is removed and forms a nitride layer. The nitride layer is removed, leaving nitride precipitates. The nitride precipitates are removed using phosphoric acid.

Abstract translation: 公开了制造半导体器件的方法。 提供具有氧化物层的衬底。 去除氧化物层的至少一部分并形成氮化物层。 去除氮化物层，留下氮化物沉淀。 使用磷酸除去氮化物沉淀物。

公开(公告)号：US20240372000A1

公开(公告)日：2024-11-07

申请号：US18776388

申请日：2024-07-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Chi Wu ,  Chai-Wei Chang ,  Jung-Jui Li ,  Ya-Lan Chang ,  Yi-Cheng Chao

IPC: H01L29/78 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/66

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.