公开(公告)号：US11854959B2

公开(公告)日：2023-12-26

申请号：US17352969

申请日：2021-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Hsing-Chih Lin ,  Kuan-Hua Lin

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/04 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L28/87 ,  H01L28/91

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first inter-metal dielectric (IMD) structure disposed over a semiconductor substrate. A metal-insulator-metal (MIM) device is disposed over the first IMD structure. The MIM device comprises at least three metal plates that are spaced from one another. The MIM device further comprises a plurality of capacitor insulator structures, where each of the plurality of capacitor insulator structures are disposed between and electrically isolate neighboring metal plates of the at least three metal plates.

公开(公告)号：US20230411277A1

公开(公告)日：2023-12-21

申请号：US17842972

申请日：2022-06-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Meng-Hsien Lin ,  Hsing-Chih Lin ,  Ke Chun Liu ,  Min-Feng Kao ,  Kuan-Hua Lin

IPC: H01L23/522 ,  G06F30/392 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L23/5226 ,  G06F30/392 ,  H01L28/91

Abstract: Capacitors and interconnect structures that couple transistors to one another include parallel stacked metal lines separated by dielectric layers. When capacitors and interconnect structures are combined, each top metal capacitor plate can be coupled to the nearest upper metal line by a through-via, while each bottom metal capacitor plate can be coupled directly to the nearest lower metal line without a via. When a back end of line (BEOL) cell includes multiple capacitors, and design rules require shrinking the cell dimensions, substituting an alternative design that has fewer through-vias can facilitate compaction of the BEOL cell. Similarly, placing capacitors in close proximity so that they can share through-vias can allow even further compaction.

公开(公告)号：US20230317758A1

公开(公告)日：2023-10-05

申请号：US17879556

申请日：2022-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Ying Ho ,  Kuan-Hua Lin ,  Keng-Yu Chou ,  Kai-Chun Hsu ,  Sung-En Lin ,  Wen-De Wang ,  Jen-Cheng Liu

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14685

Abstract: An optical device with isolation structures and a method of fabricating the same are disclosed. The optical device includes a substrate having a first surface and a second surface opposite to the first surface, first and second radiation sensing devices disposed in the substrate, a first isolation structure disposed in the substrate. The first isolation structure has a first surface and a second surface opposite to the first surface. The optical device further includes a second isolation structure disposed in the substrate and on the first surface of the first isolation structure. The second isolation structure includes a metal structure and a dielectric layer surrounding the metal structure. The second isolation structure vertically extends over the first surface of the substrate.

公开(公告)号：US20220310507A1

公开(公告)日：2022-09-29

申请号：US17352969

申请日：2021-06-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Hsing-Chih Lin ,  Kuan-Hua Lin

IPC: H01L23/522 ,  H01L49/02

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC comprises a first inter-metal dielectric (IMD) structure disposed over a semiconductor substrate. A metal-insulator-metal (MIM) device is disposed over the first IMD structure. The MIM device comprises at least three metal plates that are spaced from one another. The MIM device further comprises a plurality of capacitor insulator structures, where each of the plurality of capacitor insulator structures are disposed between and electrically isolate neighboring metal plates of the at least three metal plates.