公开(公告)号：US20240282575A1

公开(公告)日：2024-08-22

申请号：US18638436

申请日：2024-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo-Bin Huang

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/095 ,  G03F7/20 ,  G03F7/32 ,  H01L21/02 ,  H01L21/033 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/0273 ,  G03F7/094 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  G03F7/095 ,  H01L21/30608

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

公开(公告)号：US11990339B2

公开(公告)日：2024-05-21

申请号：US17391537

申请日：2021-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo Bin Huang

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/20 ,  G03F7/32 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  G03F7/095 ,  H01L21/306

CPC classification number: H01L21/0273 ,  G03F7/094 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  G03F7/095 ,  H01L21/30608

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

公开(公告)号：US20210366704A1

公开(公告)日：2021-11-25

申请号：US17391537

申请日：2021-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo Bin Huang

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  G03F7/32 ,  G03F7/20 ,  G03F7/09 ,  H01L21/033

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.