公开(公告)号：US12002710B2

公开(公告)日：2024-06-04

申请号：US16924200

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsin Chan ,  Jiing-Feng Yang ,  Kuan-Wei Huang ,  Meng-Shu Lin ,  Yu-Yu Chen ,  Chia-Wei Wu ,  Chang-Wen Chen ,  Wei-Hao Lin ,  Ching-Yu Chang

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L23/528

CPC classification number: H01L21/76816 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/528

Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.

公开(公告)号：US20210366704A1

公开(公告)日：2021-11-25

申请号：US17391537

申请日：2021-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo Bin Huang

IPC: H01L21/027 ,  H01L21/311 ,  H01L21/02 ,  G03F7/32 ,  G03F7/20 ,  G03F7/09 ,  H01L21/033

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

公开(公告)号：US20240282575A1

公开(公告)日：2024-08-22

申请号：US18638436

申请日：2024-04-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo-Bin Huang

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/095 ,  G03F7/20 ,  G03F7/32 ,  H01L21/02 ,  H01L21/033 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/0273 ,  G03F7/094 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  G03F7/095 ,  H01L21/30608

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

公开(公告)号：US20220334473A1

公开(公告)日：2022-10-20

申请号：US17809912

申请日：2022-06-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Min Chen ,  Kuo Bin Huang ,  Neng-Jye Yang ,  Chia-Wei Wu ,  Jian-Jou Lian

IPC: G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/16 ,  H01L21/027 ,  G03F7/42 ,  G03F1/80 ,  H01L21/02 ,  G03F7/20 ,  H01L21/311 ,  H01L21/033 ,  H01L21/768

Abstract: A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

公开(公告)号：US11378882B2

公开(公告)日：2022-07-05

申请号：US17007733

申请日：2020-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Min Chen ,  Kuo Bin Huang ,  Neng-Jye Yang ,  Chia-Wei Wu ,  Jian-Jou Lian

IPC: G03F7/00 ,  G03F7/075 ,  G03F7/09 ,  G03F7/16 ,  H01L21/027 ,  G03F7/42 ,  G03F1/80 ,  H01L21/02 ,  G03F7/20 ,  H01L21/311 ,  H01L21/033 ,  H01L21/768

Abstract: A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.

公开(公告)号：US20220013407A1

公开(公告)日：2022-01-13

申请号：US16924200

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Hsin Chan ,  Jiing-Feng Yang ,  Kuan-Wei Huang ,  Meng-Shu Lin ,  Yu-Yu Chen ,  Chia-Wei Wu ,  Chang-Wen Chen ,  Wei-Hao Lin ,  Ching-Yu Chang

IPC: H01L21/768 ,  H01L23/528 ,  H01L21/033

Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.

公开(公告)号：US12188686B2

公开(公告)日：2025-01-07

申请号：US17733657

申请日：2022-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Wei Wu ,  Hao Yang ,  Hsiao-Chieh Chou ,  Chun-Hung Chao ,  Jao Sheng Huang ,  Neng-Jye Yang ,  Kuo-Bin Huang

IPC: F24F9/00 ,  H01L21/67 ,  H01L21/687

Abstract: The present disclosure is at least directed to utilizing air curtain devices to form air curtains to separate and isolate areas in which respective workpieces are stored from a transfer compartment within a workpiece processing apparatus. The transfer compartment of the workpiece processing apparatus includes a robot configured to transfer or transport ones of the workpieces to and from these respective storage areas through the transfer compartment and to and from a tool compartment. A tool is present in the tool compartment for processing and refining the respective workpieces. Clean dry air (CDA) may be circulated through the respective storage areas. The air curtains formed by the air curtain devices and the circulation of CDA through the respective storage areas reduces the likelihood of the generation of defects, damages, and degradation of the workpieces when present within the workpiece processing apparatus.

公开(公告)号：US11990339B2

公开(公告)日：2024-05-21

申请号：US17391537

申请日：2021-08-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-Jou Lian ,  Yao-Wen Hsu ,  Neng-Jye Yang ,  Li-Min Chen ,  Chia-Wei Wu ,  Kuan-Lin Chen ,  Kuo Bin Huang

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/20 ,  G03F7/32 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  G03F7/095 ,  H01L21/306

CPC classification number: H01L21/0273 ,  G03F7/094 ,  G03F7/20 ,  G03F7/32 ,  H01L21/0228 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31111 ,  G03F7/095 ,  H01L21/30608

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.