公开(公告)号：US20210272928A1

公开(公告)日：2021-09-02

申请号：US17319558

申请日：2021-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Xin-Hua Huang ,  Kuan-Liang Liu ,  Kuo Liang Lu ,  Ping-Yin Liu

IPC: H01L23/00 ,  B23K37/04 ,  H01L21/683 ,  H01L21/67 ,  H01L21/20 ,  H01L21/762

Abstract: The present disclosure, in some embodiments, relates to a workpiece bonding apparatus. The workpieces bonding apparatus includes a first substrate holder having a first surface configured to receive a first workpiece, and a second substrate holder having a second surface configured to receive a second workpiece. A vacuum apparatus is positioned between the first substrate holder and the second substrate holder and is configured to selectively induce a vacuum between the first surface and the second surface. The vacuum is configured to attract the first surface and the second surface toward one another.

公开(公告)号：US20200051950A1

公开(公告)日：2020-02-13

申请号：US16654377

申请日：2019-10-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Xin-Hua Huang ,  Kuan-Liang Liu ,  Kuo Liang Lu ,  Ping-Yin Liu

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/67 ,  H01L21/20 ,  H01L21/762 ,  B23K37/04

Abstract: An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

公开(公告)号：US20180147825A1

公开(公告)日：2018-05-31

申请号：US15613963

申请日：2017-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chang-Chen Tsao ,  Kuo Liang Lu ,  Ru-Liang Lee ,  Sheng-Hsiang Chuang ,  Yu-Hung Cheng ,  Yeur-Luen Tu ,  Cheng-Kang Hu

IPC: B32B38/10 ,  H01L21/67 ,  H01L21/683 ,  H01L21/68

CPC classification number: B32B38/10 ,  H01L21/67011 ,  H01L21/67092 ,  H01L21/681 ,  H01L21/6835 ,  H01L21/6838

Abstract: The present disclosure relates to a method for debonding a pair of bonded substrates. In the method, a debonding apparatus is provided comprising a wafer chuck, a flex wafer assembly, and a set of separating blades. The pair of bonded substrates is placed upon the wafer chuck so that a first substrate of the bonded substrate pair is in contact with a chuck top surface. The flex wafer assembly is placed above the bonded substrate pair so that its first surface is in contact with an upper surface of a second substrate of the bonded substrate pair. A pair of separating blades having different thicknesses is inserted between the first and second substrates from edges of the pair of bonded substrates diametrically opposite to each other while the second substrate is concurrently pulled upward until the flex wafer assembly flexes the second substrate from the first substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.

公开(公告)号：US11031369B2

公开(公告)日：2021-06-08

申请号：US16654377

申请日：2019-10-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Xin-Hua Huang ,  Kuan-Liang Liu ,  Kuo Liang Lu ,  Ping-Yin Liu

IPC: B23K37/04 ,  H01L23/00 ,  H01L21/683 ,  H01L21/67 ,  H01L21/20 ,  H01L21/762 ,  B23K101/40

Abstract: An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

公开(公告)号：US20190118522A1

公开(公告)日：2019-04-25

申请号：US16220163

申请日：2018-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chang-Chen Tsao ,  Kuo Liang Lu ,  Ru-Liang Lee ,  Sheng-Hsiang Chuang ,  Yu-Hung Cheng ,  Yeur-Luen Tu ,  Cheng-Kang Hu

IPC: B32B38/10 ,  H01L21/683 ,  H01L21/67 ,  H01L21/68

CPC classification number: B32B38/10 ,  H01L21/67011 ,  H01L21/67092 ,  H01L21/681 ,  H01L21/6835 ,  H01L21/6838

Abstract: The present disclosure relates to a debonding apparatus. In some embodiments, the debonding apparatus comprises a wafer chuck configured to hold a pair of bonded substrates on a chuck top surface. The debonding apparatus further comprises a pair of separating blades including a first separating blade and a second separating blade placed at edges of the pair of bonded substrates diametrically opposite to each other. The first separating blade has a first thickness that is smaller than a second thickness of the second separating blade. The debonding apparatus further comprises a flex wafer assembly placed above the pair of bonded substrates and configured to pull the pair of bonded substrates upwardly to separate a second substrate from a first substrate of the pair of bonded substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.

公开(公告)号：US20190096848A1

公开(公告)日：2019-03-28

申请号：US15935309

申请日：2018-03-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Xin-Hua Huang ,  Kuan-Liang Liu ,  Kuo Liang Lu ,  Ping-Yin Liu

IPC: H01L23/00 ,  B23K37/04

Abstract: An apparatus and method is provided for controlling a propagation of a bond wave during semiconductor processing. The apparatus has a first chuck to selectively retain a first workpiece. A second chuck selectively retains a second workpiece. The first and second chucks selectively secure at least a periphery of the respective first workpiece and second workpiece. An air vacuum is circumferentially located in a region between the first chuck and second chuck. The air vacuum is configured to induce a vacuum between the first workpiece and second workpiece to selectively bring the first workpiece and second workpiece together from a propagation point. The air vacuum can be localized air vacuum guns, a vacuum disk, or an air curtain positioned about the periphery of the region between the first chuck and second chuck. The air curtain induces a lower pressure within the region between the first and second chucks.

公开(公告)号：US10569520B2

公开(公告)日：2020-02-25

申请号：US16220163

申请日：2018-12-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chang-Chen Tsao ,  Kuo Liang Lu ,  Ru-Liang Lee ,  Sheng-Hsiang Chuang ,  Yu-Hung Cheng ,  Yeur-Luen Tu ,  Cheng-Kang Hu

IPC: B32B38/10 ,  H01L21/67 ,  H01L21/68 ,  H01L21/683

Abstract: The present disclosure relates to a debonding apparatus. In some embodiments, the debonding apparatus comprises a wafer chuck configured to hold a pair of bonded substrates on a chuck top surface. The debonding apparatus further comprises a pair of separating blades including a first separating blade and a second separating blade placed at edges of the pair of bonded substrates diametrically opposite to each other. The first separating blade has a first thickness that is smaller than a second thickness of the second separating blade. The debonding apparatus further comprises a flex wafer assembly placed above the pair of bonded substrates and configured to pull the pair of bonded substrates upwardly to separate a second substrate from a first substrate of the pair of bonded substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.

公开(公告)号：US11742321B2

公开(公告)日：2023-08-29

申请号：US17319558

申请日：2021-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Xin-Hua Huang ,  Kuan-Liang Liu ,  Kuo Liang Lu ,  Ping-Yin Liu

IPC: B23K37/00 ,  H01L23/00 ,  B23K37/04 ,  H01L21/683 ,  H01L21/67 ,  H01L21/20 ,  H01L21/762 ,  B23K101/40

CPC classification number: H01L24/94 ,  B23K37/04 ,  B23K37/0408 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/6831 ,  H01L21/6838 ,  H01L21/76251 ,  H01L24/75 ,  H01L24/83 ,  B23K2101/40 ,  H01L2224/753 ,  H01L2224/759 ,  H01L2224/75704 ,  H01L2224/75724 ,  H01L2224/75744 ,  H01L2224/83209 ,  H01L2224/83894 ,  H01L2224/83908 ,  H01L2924/1203 ,  H01L2924/12043 ,  H01L2924/1304 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/12043 ,  H01L2924/00012 ,  H01L2924/1434 ,  H01L2924/00012 ,  H01L2924/1461 ,  H01L2924/00012

Abstract: The present disclosure, in some embodiments, relates to a workpiece bonding apparatus. The workpieces bonding apparatus includes a first substrate holder having a first surface configured to receive a first workpiece, and a second substrate holder having a second surface configured to receive a second workpiece. A vacuum apparatus is positioned between the first substrate holder and the second substrate holder and is configured to selectively induce a vacuum between the first surface and the second surface. The vacuum is configured to attract the first surface and the second surface toward one another.

公开(公告)号：US10889097B2

公开(公告)日：2021-01-12

申请号：US16710348

申请日：2019-12-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chang-Chen Tsao ,  Kuo Liang Lu ,  Ru-Liang Lee ,  Sheng-Hsiang Chuang ,  Yu-Hung Cheng ,  Yeur-Luen Tu ,  Cheng-Kang Hu

IPC: B32B38/10 ,  H01L21/67 ,  H01L21/68 ,  H01L21/683

Abstract: The present disclosure relates to a debonding apparatus. In some embodiments, the debonding apparatus comprises a wafer chuck configured to hold a pair of bonded substrates on a chuck top surface. The debonding apparatus further comprises a pair of separating blades including a first separating blade and a second separating blade placed at edges of the pair of bonded substrates. The first separating blade has a first thickness that is smaller than a second thickness of the second separating blade. The debonding apparatus further comprises a flex wafer assembly configured to pull the pair of bonded substrates upwardly to separate a second substrate from a first substrate of the pair of bonded substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.

公开(公告)号：US10155369B2

公开(公告)日：2018-12-18

申请号：US15613963

申请日：2017-06-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chang-Chen Tsao ,  Kuo Liang Lu ,  Ru-Liang Lee ,  Sheng-Hsiang Chuang ,  Yu-Hung Cheng ,  Yeur-Luen Tu ,  Cheng-Kang Hu

IPC: H01L21/30 ,  B32B38/10 ,  H01L21/67 ,  H01L21/68 ,  H01L21/683

Abstract: The present disclosure relates to a method for debonding a pair of bonded substrates. In the method, a debonding apparatus is provided comprising a wafer chuck, a flex wafer assembly, and a set of separating blades. The pair of bonded substrates is placed upon the wafer chuck so that a first substrate of the bonded substrate pair is in contact with a chuck top surface. The flex wafer assembly is placed above the bonded substrate pair so that its first surface is in contact with an upper surface of a second substrate of the bonded substrate pair. A pair of separating blades having different thicknesses is inserted between the first and second substrates from edges of the pair of bonded substrates diametrically opposite to each other while the second substrate is concurrently pulled upward until the flex wafer assembly flexes the second substrate from the first substrate. By providing unbalanced initial torques on opposite sides of the bonded substrate pair, edge defects and wafer breakage are reduced.