公开(公告)号：US20220336202A1

公开(公告)日：2022-10-20

申请号：US17809917

申请日：2022-06-30

申请人： Taiwan Semiconductor Manufacturing Co.,Ltd.

发明人： Wei-Che Hsieh ,  Ching Yu Huang ,  Hsin-Hao Yeh ,  Chunyao Wang ,  Tze-Liang Lee

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/033 ,  H01L21/308

摘要： A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

公开(公告)号：US11592737B2

公开(公告)日：2023-02-28

申请号：US17103023

申请日：2020-11-24

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hung-Yi Tsai ,  Wei-Che Hsieh ,  Ta-Cheng Lien ,  Hsin-Chang Lee ,  Ping-Hsun Lin ,  Hao-Ping Cheng ,  Ming-Wei Chen ,  Szu-Ping Tsai

IPC分类号： G03F1/24

摘要： A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US12044959B2

公开(公告)日：2024-07-23

申请号：US18114848

申请日：2023-02-27

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Hung-Yi Tsai ,  Wei-Che Hsieh ,  Ta-Cheng Lien ,  Hsin-Chang Lee ,  Ping-Hsun Lin ,  Hao-Ping Cheng ,  Ming-Wei Chen ,  Szu-Ping Tsai

IPC分类号： G03F1/24

CPC分类号： G03F1/24

摘要： A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20230386826A1

公开(公告)日：2023-11-30

申请号：US18358508

申请日：2023-07-25

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Che Hsieh ,  Ching Yu Huang ,  Hsin-Hao Yeh ,  Chunyao Wang ,  Tze-Liang Lee

IPC分类号： H01L21/02 ,  H01L21/762 ,  H01L21/033 ,  H01L21/308 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78

CPC分类号： H01L21/0217 ,  H01L21/76224 ,  H01L21/0337 ,  H01L21/02208 ,  H01L21/3086 ,  H01L21/0228 ,  H01L29/66795 ,  H01L21/3081 ,  H01L29/66545 ,  H01L21/823431 ,  H01L29/785

摘要： A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.

公开(公告)号：US11830727B2

公开(公告)日：2023-11-28

申请号：US17809917

申请日：2022-06-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Che Hsieh ,  Ching Yu Huang ,  Hsin-Hao Yeh ,  Chunyao Wang ,  Tze-Liang Lee

IPC分类号： H01L21/02 ,  H01L29/66 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/033 ,  H01L21/308

CPC分类号： H01L21/0217 ,  H01L21/0228 ,  H01L21/02208 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/76224 ,  H01L21/823431 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

摘要： A method includes placing a wafer into a process chamber, and depositing a silicon nitride layer on a base layer of the wafer. The process of depositing the silicon nitride layer includes introducing a silicon-containing precursor into the process chamber, purging the silicon-containing precursor from the process chamber, introducing hydrogen radicals into the process chamber, purging the hydrogen radicals from the process chamber; introducing a nitrogen-containing precursor into the process chamber, and purging the nitrogen-containing precursor from the process chamber.