公开(公告)号：US20200279751A1

公开(公告)日：2020-09-03

申请号：US16878473

申请日：2020-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Yang-Chun Cheng

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.

公开(公告)号：US11637021B2

公开(公告)日：2023-04-25

申请号：US17323951

申请日：2021-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Chi-Hsiang Shen ,  Te-Ming Kung ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Yang-Chun Cheng ,  William Weilun Hong ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/321 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US11037799B2

公开(公告)日：2021-06-15

申请号：US16400620

申请日：2019-05-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  Te-Ming Kung ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Chun-Wei Hsu ,  Yang-Chun Cheng

IPC: H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/321 ,  H01L21/768 ,  C09G1/02

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US20200098591A1

公开(公告)日：2020-03-26

申请号：US16400620

申请日：2019-05-01

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  Te-Ming Kung ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Chun-Wei Hsu ,  Yang-Chun Cheng

IPC: H01L21/321 ,  H01L23/535 ,  H01L23/528 ,  H01L23/532 ,  H01L21/768

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US12224179B2

公开(公告)日：2025-02-11

申请号：US18184438

申请日：2023-03-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Jen Liu ,  Chi-Hsiang Shen ,  Te-Ming Kung ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Yang-Chun Cheng ,  William Weilun Hong ,  Liang-Guang Chen ,  Kei-Wei Chen

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L23/535

Abstract: The current disclosure describes techniques of protecting a metal interconnect structure from being damaged by subsequent chemical mechanical polishing processes used for forming other metal structures over the metal interconnect structure. The metal interconnect structure is receded to form a recess between the metal interconnect structure and the surrounding dielectric layer. A metal cap structure is formed within the recess. An upper portion of the dielectric layer is strained to include a tensile stress which expands the dielectric layer against the metal cap structure to reduce or eliminate a gap in the interface between the metal cap structure and the dielectric layer.

公开(公告)号：US11633829B2

公开(公告)日：2023-04-25

申请号：US16573957

申请日：2019-09-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Sheng Lin ,  Chi-Hsiang Shen ,  Chi-Jen Liu ,  Chun-Wei Hsu ,  Yang-Chun Cheng ,  Kei-Wei Chen

IPC: B24B37/015 ,  B24B37/20 ,  B24B53/017 ,  B24B57/02 ,  B24B49/14

Abstract: A chemical mechanical polishing (CMP) system includes a polishing pad configured to polish a substrate. The CMP system further includes a heating system configured to adjust a temperature of the polishing pad. The heating system comprises at least one heating element spaced apart from the polishing pad. The CMP system further includes a sensor configured to measure the temperature of the polishing pad.

公开(公告)号：US11094555B2

公开(公告)日：2021-08-17

申请号：US16878473

申请日：2020-05-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wei Hsu ,  Chi-Jen Liu ,  Kei-Wei Chen ,  Liang-Guang Chen ,  William Weilun Hong ,  Chi-Hsiang Shen ,  Chia-Wei Ho ,  Yang-Chun Cheng

IPC: H01L21/321 ,  C09G1/02 ,  H01L21/768 ,  H01L23/532

Abstract: The current disclosure describes a metal surface chemical mechanical polishing technique. A complex agent or micelle is included in the metal CMP slurry. The complex agent bonds with the oxidizer contained in the CMP slurry to form a complex, e.g., a supramolecular assembly, with an oxidizer molecule in the core of the assembly and surrounded by the complex agent molecule(s). The formed complexes have an enlarged size.

公开(公告)号：US20210183688A1

公开(公告)日：2021-06-17

申请号：US17187059

申请日：2021-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC: H01L21/768 ,  H01L21/3105 ,  C09G1/02 ,  H01L21/02

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

公开(公告)号：US20220384245A1

公开(公告)日：2022-12-01

申请号：US17881938

申请日：2022-08-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC: H01L21/768 ,  C09G1/02 ,  H01L21/8234

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.

公开(公告)号：US11482450B2

公开(公告)日：2022-10-25

申请号：US17187059

申请日：2021-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia Hsuan Lee ,  Chun-Wei Hsu ,  Chia-Wei Ho ,  Chi-Hsiang Shen ,  Li-Chieh Wu ,  Jian-Ci Lin ,  Chi-Jen Liu ,  Yi-Sheng Lin ,  Yang-Chun Cheng ,  Liang-Guang Chen ,  Kuo-Hsiu Wei ,  Kei-Wei Chen

IPC: H01L21/768 ,  H01L21/3105 ,  C09G1/02 ,  H01L21/02

Abstract: Methods of forming a slurry and methods of performing a chemical mechanical polishing (CMP) process utilized in manufacturing semiconductor devices, as described herein, may be performed on semiconductor devices including integrated contact structures with ruthenium (Ru) plug contacts down to a semiconductor substrate. The slurry may be formed by mixing a first abrasive, a second abrasive, and a reactant with a solvent. The first abrasive may include a first particulate including titanium dioxide (TiO2) particles and the second abrasive may include a second particulate that is different from the first particulate. The slurry may be used in a CMP process for removing ruthenium (Ru) materials and dielectric materials from a surface of a workpiece resulting in better WiD loading and planarization of the surface for a flat profile.