CELL LAYOUT OF SEMICONDUCTOR DEVICE
    1.
    发明公开

    公开(公告)号:US20230153508A1

    公开(公告)日:2023-05-18

    申请号:US18156912

    申请日:2023-01-19

    CPC classification number: G06F30/392 G06F30/394 G06F30/398 G06F30/396

    Abstract: A device is disclosed. The cell block includes a pin disposed at a Nth metal layer in a cell layout. The first metal interconnect is disposed at a (N+1)th metal layer above the Nth metal layer and stacked over the pin, and electrically coupled to the pin. The second interconnects are disposed at a (N+2)th metal layer and stacked over the first metal interconnect, and parallel to each other. The second metal interconnects are electrically coupled to the first metal interconnect, and forming an equivalent tapping point of the pin of the cell block. The equivalent tapping point and the pin are vertically overlapped with each other, and fabrication of the device is initiated after a DRC or a SEM simulation test is passed. A first width of at least one first metal interconnect is different from a second width of one of the plurality of second metal interconnects.

    METHOD FOR OPTIMIZING FLOOR PLAN FOR AN INTEGRATED CIRCUIT

    公开(公告)号:US20220366118A1

    公开(公告)日:2022-11-17

    申请号:US17875139

    申请日:2022-07-27

    Abstract: A method is provided and includes several operations: forming a first group of macros in a first region, wherein the first group of macros are aligned with a first boundary of a channel that is coupled thereto through pins of the first group of macros; forming a second group of macros in the first region to align with a second boundary of the channel that is coupled thereto through pins of the second group of macros, wherein the first and second groups of macros are coupled to a first register; and forming a third group of macros in a second region different from the first region. A first macro and a second macro that are in the third group of macros are aligned with the first and second boundaries respectively. The third group of macros are coupled to a second register different from the first register.

    CONSTRAINT DETERMINATION SYSTEM AND METHOD FOR SEMICONDUCTOR CIRCUIT

    公开(公告)号:US20210365620A1

    公开(公告)日:2021-11-25

    申请号:US16917600

    申请日:2020-06-30

    Abstract: A method, for determining constraints related to a target circuit, includes following operations. First circuit speed results of the target circuit under different candidate constraint configurations are accumulated. Breakthrough probability distributions relative to each of the candidate constraint configurations are determined according to the first circuit speed results. First selected constraint configurations are determined from the candidate constraint configurations by sampling the breakthrough probability distributions. A first budget distribution is determined among the first selected constraint configurations. In response to that the first budget distribution is converged, the first selected constraint configurations in the first budget distribution is utilized for implementing the target circuit and generating an updated circuit speed result of the target circuit.

    Machine-Learning Design Enablement Platform
    4.
    发明申请

    公开(公告)号:US20200272777A1

    公开(公告)日:2020-08-27

    申请号:US16871841

    申请日:2020-05-11

    Abstract: Electronic design automation (EDA) of the present disclosure, in various embodiments, optimizes designing, simulating, analyzing, and verifying of one or more electronic architectural designs for an electronic device. The EDA of the present disclosure identifies one or more electronic architectural features from the one or more electronic architectural designs. In some situations, the EDA of the present disclosure can manipulate one or more electronic architectural models over multiple iterations using a machine learning process until one or more electronic architectural models from among the one or more electronic architectural models satisfy one or more electronic design targets. The EDA of the present disclosure substitutes the one or more electronic architectural models that satisfy the one or more electronic design targets for the one or more electronic architectural features in the one or more electronic architectural designs to optimize the one or more electronic architectural designs. The EDA of the present disclosure can substitute the one or more electronic architectural models before, during, and/or after designing, simulating, analyzing, and/or verifying of the one or more electronic architectural designs to effectively decrease the time to market (TTM) for the electronic device.

    CELL LAYOUT OF SEMICONDUCTOR DEVICE
    5.
    发明申请

    公开(公告)号:US20170083654A1

    公开(公告)日:2017-03-23

    申请号:US14859162

    申请日:2015-09-18

    CPC classification number: G06F17/5072 G06F17/5077 G06F17/5081 G06F2217/62

    Abstract: A cell layout, a cell layout library and a synthesizing method are disclosed. The cell layout includes a cell block and a tapping connector. The cell block has a pin. The pin being disposed at a Nth metal layer in the cell layout. The tapping connector is disposed at a (N+1)th metal layer and a (N+2)th metal layer and stacked above the pin of the cell block. The tapping connector is electrically connected to the pin and forms an equivalent tapping point of the pin of the cell block. N is a positive integer greater than or equal to 1.

    CELL LAYOUT OF SEMICONDUCTOR DEVICE
    9.
    发明申请

    公开(公告)号:US20190108302A1

    公开(公告)日:2019-04-11

    申请号:US16210808

    申请日:2018-12-05

    Abstract: A device is disclosed that includes a cell block, at least one first metal interconnect, and second metal interconnects. The cell block includes a pin disposed at a Nth metal layer in a cell layout. The at least one first metal interconnect is disposed at a (N+1)th metal layer above the Nth metal layer and stacked over the pin, and electrically coupled to the pin. The second interconnects are disposed at a (N+2)th metal layer and stacked over the at least one first metal interconnect, and parallel to each other. The second metal interconnects are electrically coupled to the at least one first metal interconnect, and forming an equivalent tapping point of the pin of the cell block. The equivalent tapping point and the pin are vertically overlapped with each other, and fabrication of the device is initiated after a DRC or a SEM simulation test is passed.

    RULE CHECK VIOLATION PREDICTION SYSTEMS AND METHODS

    公开(公告)号:US20240394460A1

    公开(公告)日:2024-11-28

    申请号:US18790306

    申请日:2024-07-31

    Abstract: Systems and methods are provided for predicting systematic design rule check (DRC) violations in a placement layout before routing is performed on the placement layout. A systematic DRC violation prediction system includes DRC violation prediction circuitry. The DRC violation prediction circuitry receives placement data associated with a placement layout. The DRC violation prediction circuitry inspects the placement data associated with the placement layout, and the placement data may include data associated with a plurality of regions of the placement layout, which may be inspected on a region-by-region basis. The DRC violation prediction circuitry predicts whether one or more systematic DRC violations would be present in the placement layout due to a subsequent routing of the placement layout.

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