公开(公告)号：US11282707B2

公开(公告)日：2022-03-22

申请号：US16842673

申请日：2020-04-07

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Bo-Tsung Tsai

IPC: H01L21/265 ,  H01L21/66 ,  H01J37/317

Abstract: A method includes: receiving a first wafer; defining a first zone and a second zone on the first wafer and a plurality of first areas; defining a plurality of first areas and second areas for the first and second zones, respectively; projecting first ion beams onto the first areas and receiving first thermal waves in response to the first ion beams; rotating the first wafer by a twist angle; projecting second ion beams onto the second areas and receiving second thermal waves in response to the second ion beams; and estimating a first crystalline orientation angle of the first wafer based on the first and second ion beams and the first and second thermal waves.

公开(公告)号：US12021103B2

公开(公告)日：2024-06-25

申请号：US17870865

申请日：2022-07-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Bo-Tsung Tsai

IPC: H01L27/146 ,  H01L21/78 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L25/00

CPC classification number: H01L27/14634 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/08 ,  H01L24/89 ,  H01L24/94 ,  H01L25/50 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469 ,  H01L23/53228 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/80011 ,  H01L2224/8012 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011

Abstract: A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

公开(公告)号：US20220359601A1

公开(公告)日：2022-11-10

申请号：US17870865

申请日：2022-07-22

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Bo-Tsung Tsai

IPC: H01L27/146 ,  H01L23/528 ,  H01L23/00 ,  H01L21/78 ,  H01L23/522 ,  H01L25/00

Abstract: A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

公开(公告)号：US12183767B2

公开(公告)日：2024-12-31

申请号：US18151917

申请日：2023-01-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bo-Tsung Tsai

IPC: H01L27/146 ,  H01L21/265 ,  H01L21/266 ,  H01L29/78

Abstract: A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion is above the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes an isolation structure in the protrusion, wherein the isolation structure surrounds the protrusion doping region. The pixel further includes a photosensitive device, wherein the photosensitive device is in the bulk and the protrusion.

公开(公告)号：US20240313026A1

公开(公告)日：2024-09-19

申请号：US18674904

申请日：2024-05-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Bo-Tsung Tsai

IPC: H01L27/146 ,  H01L21/78 ,  H01L23/00 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L25/00

CPC classification number: H01L27/14634 ,  H01L21/78 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/08 ,  H01L24/89 ,  H01L24/94 ,  H01L25/50 ,  H01L27/14603 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/1469 ,  H01L23/53228 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2224/08146 ,  H01L2224/80011 ,  H01L2224/8012 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011

Abstract: A hybrid bonded structure including a first integrated circuit component and a second integrated circuit component is provided. The first integrated circuit component includes a first dielectric layer, first conductors and isolation structures. The first conductors and the isolation structures are embedded in the first dielectric layer. The isolation structures are electrically insulated from the first conductors and surround the first conductors. The second integrated circuit component includes a second dielectric layer and second conductors. The second conductors are embedded in the second dielectric layer. The first dielectric layer is bonded to the second dielectric layer and the first conductors are bonded to the second conductors.

公开(公告)号：US11581360B2

公开(公告)日：2023-02-14

申请号：US17081609

申请日：2020-10-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bo-Tsung Tsai

IPC: H01L27/146 ,  H01L21/266 ,  H01L29/78 ,  H01L21/265

Abstract: A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a protrusion doping region in the protrusion. The pixel further includes a photosensitive device comprising a plurality of first regions, wherein each of the plurality of first regions is in the bulk and the protrusion.

公开(公告)号：US11557626B2

公开(公告)日：2023-01-17

申请号：US17212865

申请日：2021-03-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bo-Tsung Tsai

IPC: H01L27/146 ,  H01L21/266 ,  H01L29/78 ,  H01L21/265

Abstract: A pixel includes a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a floating diffusion node in the protrusion. The pixel further includes a gate structure over the bulk, wherein a top surface of the gate structure is above a top surface of the floating diffusion node. The pixel further includes a photosensitive device in the bulk. The pixel further includes an isolation well surrounding the photosensitive device.

公开(公告)号：US10854668B2

公开(公告)日：2020-12-01

申请号：US16415870

申请日：2019-05-17

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bo-Tsung Tsai

IPC: H01L27/146 ,  H01L21/266 ,  H01L29/78 ,  H01L21/265

Abstract: A pixel including a workpiece having a protrusion and a bulk, wherein the protrusion extends from an upper surface of the bulk. The pixel further includes a floating diffusion node in the protrusion. The pixel further includes a photosensitive device in the bulk. The pixel further includes an isolation well surrounding the photosensitive device.

公开(公告)号：US10297636B2

公开(公告)日：2019-05-21

申请号：US15718318

申请日：2017-09-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Bo-Tsung Tsai

IPC: H01L29/78 ,  H01L27/146 ,  H01L21/266 ,  H01L21/265

Abstract: A method of fabricating an image sensor includes implanting a first dopant in a substrate, removing a portion of the substrate to define a protrusion, forming a conductive feature over the protrusion, and implanting a second dopant in the protrusion. The removal of the portion of the substrate defines a first surface surrounding the protrusion. The second dopant has a same conductivity type as the first dopant.