公开(公告)号：US20160155672A1

公开(公告)日：2016-06-02

申请号：US15013585

申请日：2016-02-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Eric Chih-Fang Liu ,  Srisuda Thitinun ,  Dai-Lin Wu ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

IPC分类号： H01L21/8238 ,  H01L21/02 ,  H01L29/417 ,  H01L29/66

CPC分类号： H01L21/823814 ,  H01L21/02636 ,  H01L21/3065 ,  H01L21/76254 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

摘要： A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of the semiconductor substrate with an etch-tuning element. The first portion and the second portion of the semiconductor substrate are etched simultaneously to form a first opening and a second opening, respectively, in the semiconductor substrate. The method further includes epitaxially growing a first semiconductor region in the first opening, and epitaxially growing a second semiconductor region in the second opening.

公开(公告)号：US20150104913A1

公开(公告)日：2015-04-16

申请号：US14052160

申请日：2013-10-11

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Eric Chih-Fang Liu ,  Srisuda Thitinun ,  Dai-Lin Wu ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L27/092

CPC分类号： H01L21/823814 ,  H01L21/02636 ,  H01L21/3065 ,  H01L21/76254 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

摘要： A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of the semiconductor substrate with an etch-tuning element. The first portion and the second portion of the semiconductor substrate are etched simultaneously to form a first opening and a second opening, respectively, in the semiconductor substrate. The method further includes epitaxially growing a first semiconductor region in the first opening, and epitaxially growing a second semiconductor region in the second opening.

摘要翻译： 一种方法包括分别在半导体衬底的第一部分和第二部分上形成第一栅极堆叠和第二栅极堆叠，掩蔽半导体衬底的第一部分，并掩蔽半导体衬底的第一部分， 用蚀刻调谐元件注入半导体衬底的第二部分。 同时蚀刻半导体衬底的第一部分和第二部分，以在半导体衬底中分别形成第一开口和第二开口。 该方法还包括在第一开口中外延生长第一半导体区域，并且在第二开口中外延生长第二半导体区域。

公开(公告)号：US10269581B2

公开(公告)日：2019-04-23

申请号：US15722405

申请日：2017-10-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Chia-Wei Chang ,  Chao-Cheng Chen ,  Chun-Hung Lee ,  Dai-Lin Wu

IPC分类号： H01L21/3215 ,  H01L21/3213 ,  H01L21/266 ,  H01L21/033 ,  H01L21/28 ,  H01L21/265

摘要： A method of making a semiconductor structure, the method including forming a conductive layer over a substrate. The method further includes forming a first imaging layer over the conductive layer, where the first imaging layer comprises a plurality of layers. The method further includes forming openings in the first imaging layer to expose a first set of areas of the conductive layer. The method further includes implanting ions into each area of the first set of area. The method further includes forming a second imaging layer over the conductive layer. The method further includes forming openings in the second imaging layer to expose a second set of areas of the conductive layer, wherein the second set of areas is different from the first set of areas. The method further includes implanting ions into the each area of the second set of areas.

公开(公告)号：US09870954B2

公开(公告)日：2018-01-16

申请号：US15013585

申请日：2016-02-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Eric Chih-Fang Liu ,  Srisuda Thitinun ,  Dai-Lin Wu ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

IPC分类号： H01L21/3205 ,  H01L21/3213 ,  H01L21/322 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/3065 ,  H01L29/66 ,  H01L21/762 ,  H01L21/02 ,  H01L29/417

CPC分类号： H01L21/823814 ,  H01L21/02636 ,  H01L21/3065 ,  H01L21/76254 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

摘要： A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of the semiconductor substrate with an etch-tuning element. The first portion and the second portion of the semiconductor substrate are etched simultaneously to form a first opening and a second opening, respectively, in the semiconductor substrate. The method further includes epitaxially growing a first semiconductor region in the first opening, and epitaxially growing a second semiconductor region in the second opening.

公开(公告)号：US09779963B2

公开(公告)日：2017-10-03

申请号：US14813189

申请日：2015-07-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Tzu-Yen Hsieh ,  Ming-Ching Chang ,  Chia-Wei Chang ,  Chao-Cheng Chen ,  Chun-Hung Lee ,  Dai-Lin Wu

IPC分类号： H01L21/266 ,  H01L21/3215 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/033 ,  H01L21/265

CPC分类号： H01L21/3215 ,  H01L21/0338 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/28026 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/32134 ,  H01L21/32139

摘要： A method of making a semiconductor structure, the method including forming a conductive layer over a substrate. The method further includes forming a first imaging layer over the conductive layer, where the first imaging layer comprises a plurality of layers. The method further includes forming openings in the first imaging layer to expose a first set of areas of the conductive layer. The method further includes implanting ions into each area of the first set of area. The method further includes forming a second imaging layer over the conductive layer. The method further includes forming openings in the second imaging layer to expose a second set of areas of the conductive layer, wherein the second set of areas is different from the first set of areas. The method further includes implanting ions into the each area of the second set of areas.

公开(公告)号：US09263551B2

公开(公告)日：2016-02-16

申请号：US14052160

申请日：2013-10-11

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Eric Chih-Fang Liu ,  Srisuda Thitinun ,  Dai-Lin Wu ,  Ryan Chia-Jen Chen ,  Chao-Cheng Chen

IPC分类号： H01L21/3205 ,  H01L21/3213 ,  H01L21/322 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/8234 ,  H01L21/3065 ,  H01L21/762

CPC分类号： H01L21/823814 ,  H01L21/02636 ,  H01L21/3065 ,  H01L21/76254 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/41775 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

摘要： A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of the semiconductor substrate with an etch-tuning element. The first portion and the second portion of the semiconductor substrate are etched simultaneously to form a first opening and a second opening, respectively, in the semiconductor substrate. The method further includes epitaxially growing a first semiconductor region in the first opening, and epitaxially growing a second semiconductor region in the second opening.

摘要翻译： 一种方法包括分别在半导体衬底的第一部分和第二部分上形成第一栅极堆叠和第二栅极堆叠，掩蔽半导体衬底的第一部分，并掩蔽半导体衬底的第一部分， 用蚀刻调谐元件注入半导体衬底的第二部分。 同时蚀刻半导体衬底的第一部分和第二部分，以在半导体衬底中分别形成第一开口和第二开口。 该方法还包括在第一开口中外延生长第一半导体区域，并且在第二开口中外延生长第二半导体区域。