公开(公告)号：US12076831B2

公开(公告)日：2024-09-03

申请号：US18308878

申请日：2023-04-28

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Chen Wei ,  Jheng-Si Su ,  Shih-Ho Lin ,  Jen-Chieh Lai ,  Chun-Chieh Chan

IPC分类号： B24B37/005 ,  B24B37/04 ,  B24B37/20 ,  B24B37/32 ,  B24B49/10 ,  B24B49/16 ,  B24B49/18 ,  B24B53/00 ,  B24B53/007 ,  B24B53/017 ,  H01L21/321

CPC分类号： B24B37/20 ,  B24B37/005 ,  B24B37/04 ,  B24B37/32 ,  B24B49/10 ,  B24B49/16 ,  B24B49/18 ,  B24B53/001 ,  B24B53/017 ,  H01L21/3212

摘要： A chemical mechanical polishing (CMP) apparatus is provided, including a polishing pad and a polishing head. The polishing pad has a polishing surface. The polishing head is configured to hold a wafer in contact with the polishing surface during the polishing process. The polishing head includes a retaining ring, at least one fluid channel, and a vacuum pump. The retaining ring is arranged along the periphery of the polishing head and configured to retain the wafer. The at least one fluid channel is provided inside the polishing head, wherein the retaining ring includes a bottom surface facing the polishing surface and a plurality of holes in fluid communication with the bottom surface and the at least one fluid channel. The vacuum pump is fluidly coupled to the at least one fluid channel.

公开(公告)号：US12009222B2

公开(公告)日：2024-06-11

申请号：US17556032

申请日：2021-12-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Chen Wei ,  Chun-Chieh Chan ,  Chun-Jui Chu ,  Jen-Chieh Lai ,  Shih-Ho Lin

IPC分类号： H01L21/321 ,  H01L21/02 ,  H01L21/28 ,  H01L21/302 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/768

CPC分类号： H01L21/3212 ,  H01L21/02074 ,  H01L21/0228 ,  H01L21/28 ,  H01L21/302 ,  H01L21/32139 ,  H01L21/67046 ,  H01L21/67051 ,  H01L21/76829

摘要： A method for forming a semiconductor device structure is provided. The method includes forming a first layer over a substrate. The method includes forming a stop layer over the first layer. The method includes forming a second layer over the stop layer. The second layer is in direct contact with the stop layer. The method includes partially removing the second layer. The method includes performing an etching process to partially remove the stop layer and an upper portion of the first layer, wherein protrusion structures are formed over a lower portion of the first layer after the etching process, and the protrusion structures include the stop layer and the upper portion of the first layer remaining after the etching process. The method includes removing the protrusion structures.

公开(公告)号：US11251063B2

公开(公告)日：2022-02-15

申请号：US17065022

申请日：2020-10-07

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Jheng-Si Su ,  Yu-Chen Wei ,  Chih-Yuan Yang ,  Shih-Ho Lin ,  Jen-Chieh Lai

IPC分类号： H01L21/677 ,  H01L21/683 ,  H01L21/687 ,  B25J15/06 ,  B65G61/00 ,  B24B37/20 ,  H01L21/67 ,  B25J11/00

摘要： A transporter for transporting an article used in semiconductor fabrication is provided. The transporter includes a robotic arm. The transporter further includes two platens connected to the robotic arm. Each of the two platens an inner surface facing the other, and a number of gas holes are formed on each of the inner surfaces of the two platens. The transporter also includes a gas supplier placed in communication with the gas holes. The gas supplier is used to control the flow of gas through the gas holes.

公开(公告)号：US11673223B2

公开(公告)日：2023-06-13

申请号：US17711724

申请日：2022-04-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yu-Chen Wei ,  Jheng-Si Su ,  Shih-Ho Lin ,  Jen-Chieh Lai ,  Chun-Chieh Chan

IPC分类号： B24B49/18 ,  B24B49/16 ,  B24B49/10 ,  B24B37/005 ,  B24B37/32 ,  B24B53/017 ,  B24B37/20 ,  B24B37/04 ,  H01L21/321 ,  B24B53/00

CPC分类号： B24B37/20 ,  B24B37/005 ,  B24B37/04 ,  B24B37/32 ,  B24B49/10 ,  B24B49/16 ,  B24B49/18 ,  B24B53/001 ,  B24B53/017 ,  H01L21/3212

摘要： A chemical mechanical polishing method is provided, including polishing a batch of wafers in sequence on a polishing surface of a polishing pad; conditioning the polishing surface with a pad conditioner, wherein the pad conditioner is operable to apply downward force according to a predetermined downward force stored in a controller to condition the polishing surface; measuring the downward force applied by the pad conditioner with a measurement tool when the pad conditioner is at a home position and after conditioning the polishing surface; comparing the downward force measured by the measurement tool and the predetermined downward force with the controller to determine whether a difference between the downward force measured by the measurement tool and the predetermined downward force exceeds a range of acceptable values; and calibrating the downward force applied by the pad conditioner with the controller when the difference exceeds the range of acceptable values.