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    SELF-ALIGNED DIELECTRIC LINER STRUCTURE FOR PROTECTION IN MEMS COMB ACTUATOR
    2.
    发明申请
    SELF-ALIGNED DIELECTRIC LINER STRUCTURE FOR PROTECTION IN MEMS COMB ACTUATOR 有权

    公开(公告)号：US20220311357A1

    公开(公告)日：2022-09-29

    申请号：US17842101

    申请日：2022-06-16

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Chiao-Chun Hsu ,  Chih-Ming Chen ,  Chung-Yi Yu ,  Lung Yuan Pan

    IPC分类号： H02N1/00

    摘要： In some embodiments, the present disclosure relates to a microelectromechanical system (MEMS) comb actuator including a comb structure. The comb structure includes a support layer having a first material and a plurality of protrusions extending away from a first surface of the support layer in a first direction. The plurality of protrusions are also made of the first material. The plurality of protrusions are separated along a second direction parallel to the first surface of the support layer. The MEMS comb actuator may further include a dielectric liner structure that continuously and completely covers the first surface of the support layer and outer surfaces of the plurality of protrusions. The dielectric liner structure includes a connective portion that continuously connects topmost surfaces of at least two of the plurality of protrusions.

    DIELECTRIC ANCHORS FOR ANCHORING A CONDUCTIVE PILLAR
    4.
    发明公开
    DIELECTRIC ANCHORS FOR ANCHORING A CONDUCTIVE PILLAR 审中-公开

    公开(公告)号：US20230275012A1

    公开(公告)日：2023-08-31

    申请号：US17682238

    申请日：2022-02-28

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Lung Yuan Pan

    IPC分类号： H01L23/498 ,  H01L23/00 ,  H01L21/768

    CPC分类号： H01L23/49827 ,  H01L23/49838 ,  H01L24/16 ,  H01L21/76898 ,  H01L2224/16146

    摘要： Various embodiments of the present disclosure are directed towards an apparatus comprising a semiconductor substrate. A conductive pillar is disposed in the semiconductor substrate. An isolation region is disposed in the semiconductor substrate and extends laterally around the conductive pillar. The isolation region is configured to electrically isolate the conductive pillar from a surrounding portion of the semiconductor substrate. An opening is disposed in the isolation region. A dielectric anchor is disposed in the isolation region. The dielectric anchor extends vertically through the semiconductor substrate along a side of the opening. The dielectric anchor anchors the conductive pillar to the semiconductor substrate.