-
公开(公告)号：US11799001B2
公开(公告)日：2023-10-24
申请号：US17327341
申请日：2021-05-21
IPC分类号： H01L29/41 , H01L29/417 , H01L21/48 , H01L23/522
CPC分类号： H01L29/41725 , H01L21/486 , H01L23/5226
摘要： A transistor and an interconnect structure disposed over the transistor. The interconnect structure includes a first dielectric layer, a first conductive feature in the first dielectric layer, a first etch stop layer (ESL) disposed over the first dielectric layer and the first conductive feature, a dielectric feature disposed in the first ESL, an electrode disposed over the dielectric feature, and a second ESL disposed on the first ESL and the electrode.
-
公开(公告)号：US11670501B2
公开(公告)日：2023-06-06
申请号：US17219173
申请日：2021-03-31
发明人： Hsiu-Wen Hsueh , Yu-Hsiang Chen , Wen-Sheh Huang , Chii-Ping Chen , Wan-Te Chen
IPC分类号： H01L21/02 , H01L21/762 , H01L27/06 , H01L23/64 , H01L21/304 , H01L27/08 , H01L23/522 , H01L49/02 , H01L23/528 , H01L23/34
CPC分类号： H01L21/022 , H01L21/304 , H01L21/762 , H01L23/5228 , H01L23/647 , H01L27/0635 , H01L27/0802 , H01L28/24 , H01L23/345 , H01L23/528 , H01L23/5226 , H01L28/20
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a first resistive element and a second resistive element over the semiconductor substrate. A topmost surface of the second resistive element is higher than a topmost surface of the first resistive element. The semiconductor device structure also includes a first conductive feature and a second conductive feature electrically connected to the first resistive element. The second resistive element is between and electrically isolated from the first conductive feature and the second conductive feature. The semiconductor device structure further includes a first dielectric layer surrounding the first conductive feature and the second conductive feature.
-
公开(公告)号：US12040178B2
公开(公告)日：2024-07-16
申请号：US18307197
申请日：2023-04-26
发明人： Hsiu-Wen Hsueh , Yu-Hsiang Chen , Wen-Sheh Huang , Chii-Ping Chen , Wan-Te Chen
IPC分类号： H01L21/02 , H01L21/304 , H01L21/762 , H01L23/522 , H01L23/64 , H01L27/06 , H01L27/08 , H01L49/02 , H01L23/00 , H01L23/34 , H01L23/528
CPC分类号： H01L21/022 , H01L21/304 , H01L21/762 , H01L23/5228 , H01L23/647 , H01L27/0635 , H01L27/0802 , H01L28/24 , H01L23/345 , H01L23/5226 , H01L23/528 , H01L24/05 , H01L28/20 , H01L2924/1305
摘要： A semiconductor device structure and method for manufacturing the same are provided. The method includes forming a first resistive element over a substrate, and the first resistive element has a first sidewall extending in a first direction and a second sidewall opposite to the first sidewall and extending in the first direction. The method further includes forming a first conductive feature and a second conductive feature over and electrically connected to the first resistive element and forming a second resistive element over the first resistive element and spaced apart from the first resistive element in a second direction. In addition, the second resistive element is located between the first sidewall and the second sidewall of the first resistive element in a top view, and the first resistive element and the second resistive element are made of different nitrogen-containing materials.
-
公开(公告)号：US20230369425A1
公开(公告)日：2023-11-16
申请号：US18360929
申请日：2023-07-28
IPC分类号： H01L29/417 , H01L21/48 , H01L23/522
CPC分类号： H01L29/41725 , H01L21/486 , H01L23/5226
摘要： a transistor and an interconnect structure disposed over the transistor. The interconnect structure includes a first dielectric layer, a first conductive feature in the first dielectric layer, a first etch stop layer (ESL) disposed over the first dielectric layer and the first conductive feature, a dielectric feature disposed in the first ESL, an electrode disposed over the dielectric feature, and a second ESL disposed on the first ESL and the electrode.
-
公开(公告)号：US11798848B2
公开(公告)日：2023-10-24
申请号：US17558078
申请日：2021-12-21
发明人： Wen-Sheh Huang , Hsiu-Wen Hsueh , Yu-Hsiang Chen , Chii-Ping Chen
IPC分类号： H01L21/768 , H01L21/762 , H01L27/06 , H01L21/311 , H01L49/02
CPC分类号： H01L21/76898 , H01L21/31105 , H01L21/762 , H01L21/76811 , H01L27/0629 , H01L28/24
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first dielectric layer over the substrate. The semiconductor device structure also includes a first conductive feature and a second conductive feature surrounded by the first dielectric layer and a second dielectric layer over the first dielectric layer. The semiconductor device structure further includes a resistive element having a first portion over the second dielectric layer and a second portion penetrating through the second dielectric layer to be electrically connected to the first conductive feature. In addition, the semiconductor device structure includes a conductive via penetrating through the second dielectric layer to be electrically connected to the second conductive feature. The second portion of the resistive element is wider than the conductive via.
-
公开(公告)号：US20230307356A1
公开(公告)日：2023-09-28
申请号：US17703710
申请日：2022-03-24
IPC分类号： H01L23/525
CPC分类号： H01L23/5252
摘要： a first dielectric layer, a first conductive feature and a second conductive feature in the first dielectric layer, a first dielectric feature disposed directly on the first conductive feature; a first etch stop layer (ESL) disposed over the first dielectric layer and the second conductive feature, a first conductive layer disposed on and in contact with the first dielectric feature, a second ESL disposed over the first conductive layer, a second dielectric layer disposed directly on the first ESL and the second ESL, a first via extending through the second dielectric layer and the second ESL to contact with the first conductive feature, and a second via extending through the second dielectric layer and the first ESL to contact with the second conductive feature.
-
公开(公告)号：US20220293749A1
公开(公告)日：2022-09-15
申请号：US17327341
申请日：2021-05-21
IPC分类号： H01L29/417 , H01L23/522 , H01L21/48
摘要： a transistor and an interconnect structure disposed over the transistor. The interconnect structure includes a first dielectric layer, a first conductive feature in the first dielectric layer, a first etch stop layer (ESL) disposed over the first dielectric layer and the first conductive feature, a dielectric feature disposed in the first ESL, an electrode disposed over the dielectric feature, and a second ESL disposed on the first ESL and the electrode.
-
公开(公告)号：US20240249991A1
公开(公告)日：2024-07-25
申请号：US18156779
申请日：2023-01-19
发明人： Yu-Hsiang Chen , Hsiu-Wen Hsueh , Szu-Lin Liu , Wen-Sheh Huang , Chloe Hsin-Yi Chen , Wei-Lin Lai
IPC分类号： H01L23/34 , H01L23/522 , H01L23/528
CPC分类号： H01L23/34 , H01L23/5226 , H01L23/5228 , H01L23/5283
摘要： A semiconductor structure includes a substrate having a front side and a back side, one or more dielectric layers over the front side, and a conductive structure. The one or more dielectric layers include a thermal sensor region and two dummy regions sandwiching the thermal sensor region along a second direction from a top view. The thermal sensor region and the two dummy regions extend longitudinally along a first direction generally perpendicular to the second direction from the top view. The conductive structure is embedded in the thermal sensor region of the one or more dielectric layers. The conductive structure includes conductive lines parallel to each other and extending longitudinally along the first direction, and conductive bars and vias electrically connecting the conductive lines. The conductive lines in a same dielectric layer of the one or more dielectric layers are electrically connected one by one zigzaggedly from the top view.
-
公开(公告)号：US12119262B2
公开(公告)日：2024-10-15
申请号：US18333124
申请日：2023-06-12
发明人： Wen-Sheh Huang , Hsiu-Wen Hsueh , Yu-Hsiang Chen , Chii-Ping Chen
IPC分类号： H01L21/768 , H01L21/311 , H01L21/762 , H01L27/06 , H01L49/02
CPC分类号： H01L21/76898 , H01L21/31105 , H01L21/762 , H01L21/76811 , H01L27/0629 , H01L28/24
摘要： A semiconductor device structure is provided. The semiconductor device structure includes a first dielectric layer and a first conductive feature and a second conductive feature surrounded by the first dielectric layer. The semiconductor device structure also includes a second dielectric layer over the first dielectric layer and a resistive element electrically connected to the first conductive feature. The second dielectric layer surrounds a portion of the resistive element. The semiconductor device structure further includes a conductive via electrically connected to the second conductive feature. The second dielectric layer surrounds a portion of the conductive via, and a contact area between the resistive element and the first conductive feature is wider than a contact area between the conductive via and the second conductive feature.
-
公开(公告)号：US12068377B2
公开(公告)日：2024-08-20
申请号：US18360929
申请日：2023-07-28
IPC分类号： H01L29/41 , H01L21/48 , H01L23/522 , H01L29/417
CPC分类号： H01L29/41725 , H01L21/486 , H01L23/5226
摘要： a transistor and an interconnect structure disposed over the transistor. The interconnect structure includes a first dielectric layer, a first conductive feature in the first dielectric layer, a first etch stop layer (ESL) disposed over the first dielectric layer and the first conductive feature, a dielectric feature disposed in the first ESL, an electrode disposed over the dielectric feature, and a second ESL disposed on the first ESL and the electrode.
-
-
-
-
-
-
-
-
-
搜索结果
10 条记录 (耗时 0.021 秒)
