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    Resist composition and patterning process
    8.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US07232638B2

    公开(公告)日：2007-06-19

    申请号：US10427939

    申请日：2003-05-02

    申请人： Jun Hatakeyama ,  Hideshi Kurihara ,  Takanobu Takeda ,  Osamu Watanabe

    发明人： Jun Hatakeyama ,  Hideshi Kurihara ,  Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0758 ,  G03F7/0397

    摘要： Chemically amplified positive resist compositions comprising a polymer obtained by copolymerizing a silicon-containing monomer with a polar monomer having a value of LogP or cLogP of up to 0.6 and optionally hydroxystyrene, a photoacid generator and an organic solvent are sensitive to high-energy radiation and have a high sensitivity and resolution at a wavelength of less than 300 nm and improved resistance to oxygen plasma etching.

    摘要翻译： 包含通过使含硅单体与LogP或cLogP值高达0.6的极性单体和任选的羟基苯乙烯，光酸产生剂和有机溶剂共聚获得的聚合物的化学扩增的正性抗蚀剂组合物对高能辐射敏感， 在小于300nm的波长下具有高灵敏度和分辨率，并且改善了耐氧等离子体蚀刻的耐受性。

    Polymer, resist composition and patterning process
    9.
    发明授权
    Polymer, resist composition and patterning process 有权
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US07135269B2

    公开(公告)日：2006-11-14

    申请号：US10765919

    申请日：2004-01-29

    申请人： Jun Hatakeyama ,  Takanobu Takeda ,  Osamu Watanabe

    发明人： Jun Hatakeyama ,  Takanobu Takeda ,  Osamu Watanabe

    IPC分类号： G03C1/73 ,  G03F7/039 ,  G03F7/30 ,  G03F7/36 ,  C08F30/08 ,  C08F24/00

    CPC分类号： G03F7/0395 ,  C08F220/28 ,  C08F222/20 ,  C08F230/08 ,  C08F232/08 ,  G03F7/0397 ,  G03F7/0758

    摘要： A polymer comprising recurring units containing silicon and recurring units having a substituent group of formula (1) is novel wherein A1 is a divalent group selected from furandiyl, tetrahydrofurandiyl and oxanorbornanediyl, R1 and R2 are selected from monovalent C1–C10 hydrocarbon groups, or R1 and R2 taken together may form an aliphatic hydrocarbon ring with the carbon atom, and R3 is hydrogen or a monovalent C1–C10 hydrocarbon group which may contain a hetero atom. The polymer is useful as a base resin to formulate a resist composition which is sensitive to high-energy radiation, and has excellent sensitivity and resolution at a wavelength of less than 300 nm as well as satisfactory oxygen plasma etching resistance.

    摘要翻译： 含有硅的重复单元和具有式（1）的取代基的重复单元的聚合物是新颖的，其中A 1是选自呋喃二基，四氢呋喃基和氧杂甘露二烷基的二价基团，R 1， SUP>和R 2选自单价C 1 -C 10烃基或R 1和R 2 一起可以与碳原子一起形成脂族烃环，R 3是氢或一价C 1 -C 1 - 10个可以含有杂原子的烃基。 聚合物可用作基础树脂以配制对高能辐射敏感的抗蚀剂组合物，并且在小于300nm的波长下具有优异的灵敏度和分辨率以及满意的氧等离子体耐蚀刻性。

    Resist composition and patterning process
    10.
    发明授权
    Resist composition and patterning process 有权
    抗蚀剂组成和图案化工艺

    公开(公告)号：US06746817B2

    公开(公告)日：2004-06-08

    申请号：US09984726

    申请日：2001-10-31

    申请人： Takanobu Takeda ,  Jun Hatakeyama ,  Osamu Watanabe ,  Hiroshi Kubota

    发明人： Takanobu Takeda ,  Jun Hatakeyama ,  Osamu Watanabe ,  Hiroshi Kubota

    IPC分类号： G03C173

    CPC分类号： C08K5/13 ,  C08F232/08 ,  C08K5/36 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/111 ,  Y10S430/115

    摘要： A polymer comprises recurring units of formula (1) and recurring units having acid labile groups which units increase alkali solubility as a result of the acid labile groups being decomposed under the action of acid, and has a Mw of 1,000-500,000. R1 and R2 each are hydrogen, hydroxyl, hydroxyalkyl, alkyl, alkoxy or halogen, and n is 0, 1, 2, 3 or 4. The polymer is useful as a base resin to form a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, and high etching resistance and is best suited as a micropatterning material for use in VLSI manufacture.

    摘要翻译： 聚合物包含式（1）的重复单元和具有酸不稳定基团的重复单元，该单元由于酸不稳定基团在酸的作用下分解而增加碱溶解度，并且具有1,000-500,000的Mw .R <1 >和R 2各自为氢，羟基，羟基烷基，烷基，烷氧基或卤素，n为0,1,2,3或4.该聚合物可用作基础树脂以形成化学增强正性抗蚀剂组合物 其具有显着增强曝光前后碱溶解速度对比度，高灵敏度，高分辨率和高耐腐蚀性的优点，并且最适用于用于VLSI制造的微图案材料。