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公开(公告)号：US5580936A
公开(公告)日：1996-12-03
申请号：US536119
申请日：1995-09-29
IPC分类号： C08F8/00 , C08F8/14 , C08F12/00 , C08F212/14 , G03F7/027
CPC分类号： C08F8/12 , C08F2800/20
摘要： A partially tert-butoxylated poly(p-hydroxystyrene) is prepared by subjecting poly(p-tert-butoxystyrene) to reaction of eliminating some of the tert-butoxy groups in an organic solvent at a temperature of 30.degree.-100.degree. C. in the presence of an acid catalyst at a molar ratio of acid catalyst/t-BuO group of from 0.050 to 2.0. During the elimination reaction, a change of solubility of the resulting partially tert-butoxylated poly(p-hydroxystyrene) is determined to calculate a degree of elimination of tert-butoxy groups. The reaction is terminated when a desired degree of elimination is reached. Through a simple process, partially tert-butoxylated poly(p-hydroxystyrene) having a well controlled t-BuO content is produced in high yields.
摘要翻译： 通过使聚（对叔丁氧基苯乙烯）在有机溶剂中在30℃-100℃的温度下除去一些叔丁氧基进行反应来制备部分叔丁氧基化的聚（对羟基苯乙烯） 酸催化剂/ t-BuO基团的摩尔比为0.050至2.0的酸催化剂的存在。 在消除反应期间，测定所得部分叔丁氧基化聚（对羟基苯乙烯）的溶解度的变化，以计算叔丁氧基的消除程度。 当达到所需的消除程度时，终止反应。 通过简单的方法，产生具有良好控制的t-BuO含量的部分叔丁氧基化聚（对羟基苯乙烯），产率高。
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公开(公告)号：US06022665A
公开(公告)日：2000-02-08
申请号：US109084
申请日：1998-07-02
IPC分类号： C08F212/14 , G03C1/492
CPC分类号： C08F212/14 , Y10S430/115
摘要： The invention provides a novel polymer comprising a recurring unit of formula (1) wherein R.sup.1 is hydrogen or methyl, R.sup.2 is hydrogen or acid labile group, at least one R.sup.2 being hydrogen and at least one R.sup.2 being an acid labile group, and n=2 or 3. The polymer's Mw is 3,000-300,000. Blending the polymer as a base resin with an organic solvent and a photoacid generator yields a chemically amplified positive resist composition. ##STR1##
摘要翻译： 本发明提供一种包含式（1）的重复单元的新型聚合物，其中R 1是氢或甲基，R 2是氢或酸不稳定基团，至少一个R 2是氢，至少一个R 2是酸不稳定基团，n = 聚合物的Mw为3,000-300,000。 将聚合物作为基础树脂与有机溶剂和光酸发生剂混合产生化学放大的正性抗蚀剂组合物。
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公开(公告)号：US5844057A
公开(公告)日：1998-12-01
申请号：US630633
申请日：1996-04-11
IPC分类号： C08F212/14 , G03C1/492 , C08F12/24
CPC分类号： C08F212/14 , Y10S430/115
摘要： The invention provides a novel polymer comprising a recurring unit of formula. (1) wherein R.sup.1 is hydrogen or methyl, R.sup.2 is hydrogen or acid labile group, at least one R.sup.2 being hydrogen and at least one R.sup.2 being an acid labile group, and n=2 or 3. The polymer's Mw is 3,000-300,000. Blending the polymer as a base resin with an organic solvent and a photoacid generator yields a chemically amplified positive resist composition. ##STR1##
摘要翻译： 本发明提供一种包含式的重复单元的新型聚合物。 （1）其中R1是氢或甲基，R2是氢或酸不稳定基团，至少一个R2是氢，至少一个R2是酸不稳定基团，n = 2或3.聚合物的Mw为3,000-300,000。 将聚合物作为基础树脂与有机溶剂和光酸发生剂混合产生化学放大的正性抗蚀剂组合物。 （1）
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公开(公告)号：US5691396A
公开(公告)日：1997-11-25
申请号：US719011
申请日：1996-09-24
IPC分类号： G03F7/004 , C08G77/14 , C08G77/22 , C08G77/38 , C09D5/25 , C09D183/06 , G03F7/029 , G03F7/039 , G03F7/075 , G03F7/30 , H01L21/027 , C08J3/28
CPC分类号： G03F7/075 , C08G77/38 , C09D183/06
摘要： The invention provides a novel polysiloxane compound, typically polyhydroxybenzylsilsesquioxane, having some hydroxyl groups replaced by acetal groups and optionally acid labile groups. The polysiloxane compound is useful as an alkali soluble polymer for positive resist material.
摘要翻译： 本发明提供了一种新的聚硅氧烷化合物，典型的是多羟基苄基倍半硅氧烷，其中一些羟基被缩醛基团和任选的酸不稳定基团取代。 聚硅氧烷化合物可用作正性抗蚀剂材料的碱溶性聚合物。
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公开(公告)号：US5691112A
公开(公告)日：1997-11-25
申请号：US762861
申请日：1996-12-10
申请人： Satoshi Watanabe , Youichi Ohsawa , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Junji Shimada , Fujio Yagihashi , Katsuya Takemura
发明人： Satoshi Watanabe , Youichi Ohsawa , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Junji Shimada , Fujio Yagihashi , Katsuya Takemura
IPC分类号： C07C317/22 , C07C381/12 , G03F7/004
CPC分类号： G03F7/0045 , C07C317/22 , C07C381/12
摘要： Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.
摘要翻译： 三氟甲磺酸和对甲苯磺酸双或三（对叔丁氧基苯基）锍盐是新颖的。 它们由双（对叔丁氧基苯基）亚砜制备，也是新的。 含有锍盐作为光酸发生剂的化学增幅正性抗蚀剂组合物对深紫外线，电子束和X射线高度敏感，可以用碱性水溶液显影形成图案，因此适用于 使用精细图案化技术。
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公开(公告)号：US5633409A
公开(公告)日：1997-05-27
申请号：US379986
申请日：1995-01-27
申请人： Satoshi Watanabe , Youichi Ohsawa , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Junji Shimada , Fujio Yagihashi , Katsuya Takemura
发明人： Satoshi Watanabe , Youichi Ohsawa , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Junji Shimada , Fujio Yagihashi , Katsuya Takemura
IPC分类号： C07C317/22 , C07C381/12 , G03F7/004 , C07C319/00
CPC分类号： G03F7/0045 , C07C317/22 , C07C381/12
摘要： Trifluoromethanesulfonic and p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salts are novel. They are prepared from bis(p-tert-butoxyphenyl)sulfoxide which is also novel. A chemically amplified positive resist composition which contains the sulfonium salt as a photo-acid generator is highly sensitive to deep-UV rays, electron beams and X-rays, can be developed with alkaline aqueous solution to form a pattern, and is thus suitable for use in a fine patterning technique.
摘要翻译： 三氟甲磺酸和对甲苯磺酸双或三（对叔丁氧基苯基）锍盐是新颖的。 它们由双（对叔丁氧基苯基）亚砜制备，也是新的。 含有锍盐作为光酸发生剂的化学增幅正性抗蚀剂组合物对深紫外线，电子束和X射线高度敏感，可以用碱性水溶液显影形成图案，因此适用于 使用精细图案化技术。
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7.发明授权Resist composition with polymeric dissolution inhibitor and alkali soluble resin 失效抗溶剂组合物与聚合溶解抑制剂和碱溶性树脂
公开(公告)号：US5759739A
公开(公告)日：1998-06-02
申请号：US635856
申请日：1996-04-22
申请人： Katsuya Takemura , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Minoru Shigemitsu , Ken'ichi Itoh
发明人： Katsuya Takemura , Toshinobu Ishihara , Kazumasa Maruyama , Yoshihumi Takeda , Minoru Shigemitsu , Ken'ichi Itoh
CPC分类号： G03F7/039 , G03F7/0045 , Y10S430/111
摘要： A resist composition comprising an alkali-soluble resin, typically a partially t-butoxycarbonylated polyhydroxystyrene, a p-butoxystyrene/t-butylacrylate copolymer or p-butoxystyrene/maleic anhydride copolymer as a dissolution inhibitor, and a iodonium or sulfonium salt as a photoacid generator is effective for forming a resist film which can be precisely and finely patterned using high energy radiation such as a KrF excimer laser.
摘要翻译： 抗蚀剂组合物，其包含碱溶性树脂，通常为部分叔丁氧基羰基化的聚羟基苯乙烯，作为溶解抑制剂的对丁氧基苯乙烯/叔丁基丙烯酸酯共聚物或对丁氧基苯乙烯/马来酸酐共聚物，以及作为光酸产生剂的碘鎓盐或锍盐 对于形成可以使用高能辐射如KrF准分子激光器精确和精细地图案化的抗蚀剂膜是有效的。
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公开(公告)号：US5882844A
公开(公告)日：1999-03-16
申请号：US831301
申请日：1997-04-01
CPC分类号： G03F7/0757
摘要： A chemically amplified positive resist composition contains (A) an organic solvent, (B) a base resin in the form of a polysiloxane having phenolic hydroxyl groups some of which are protected with alkoxyalkyl groups and having a weight average molecular weight of 2,000-50,000, (C) a photoacid generator, and (D) a vinyl ether group-containing compound. The composition has high sensitivity to actinic radiation, is developable with aqueous base to form a resist pattern, and lends itself to fine patterning.
摘要翻译： 化学放大正性抗蚀剂组合物包含（A）有机溶剂，（B）具有酚羟基的聚硅氧烷形式的基础树脂，其中一些被烷氧基烷基保护并具有2,000-50,000的重均分子量， （C）光致酸产生剂，和（D）含乙烯基醚基的化合物。 该组合物对光化辐射具有高灵敏度，可用碱水溶液显影以形成抗蚀剂图案，并使其自身精细图案化。
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9.发明授权High molecular weight silicone compounds, chemically amplified positive resist compositions, and patterning method 失效高分子量硅氧烷化合物，化学放大正性抗蚀剂组合物和图案化方法
公开(公告)号：US6066433A
公开(公告)日：2000-05-23
申请号：US37023
申请日：1998-03-09
CPC分类号： C08G77/14 , G03F7/0045 , G03F7/0757 , Y10S430/106
摘要： In a silicone polymer having phenolic hydroxyl groups, the hydrogen atoms of some of the phenolic hydroxyl groups are replaced by acid labile groups of at least one type. The silicone polymer is crosslinked at some of the remaining phenolic hydroxyl groups with crosslinking groups having C--O--C linkages within a molecule and/or between molecules. The silicone polymer has a Mw of 5,000 to 50,000. A chemically amplified positive resist composition comprising the silicone polymer as a base resin has a high sensitivity and resolution so that it is suitable for fine patterning with electron beams or deep UV. Because of improved oxygen plasma etching resistance, the composition is suitable for use in the two-layer resist technique.
摘要翻译： 在具有酚羟基的硅氧烷聚合物中，一些酚羟基的氢原子被至少一种类型的酸不稳定基团取代。 硅氧烷聚合物在一些剩余的酚羟基上与在分子内和/或分子之间具有C-O-C键的交联基团交联。 有机硅聚合物的Mw为5,000至50,000。 包含作为基础树脂的硅氧烷聚合物的化学放大型正性抗蚀剂组合物具有高灵敏度和分辨率，使其适用于用电子束或深紫外线精细构图。 由于氧等离子体抗蚀刻性能的改善，组合物适用于双层抗蚀剂技术。
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公开(公告)号：US5612170A
公开(公告)日：1997-03-18
申请号：US569659
申请日：1995-12-08
申请人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
发明人： Katsuya Takemura , Junji Tsuchiya , Toshinobu Ishihara , Akinobu Tanaka , Yoshio Kawai , Jiro Nakamura
CPC分类号： G03F7/0045 , G03F7/0755 , G03F7/0757 , Y10S430/115 , Y10S430/122
摘要： A positive resist composition based on a silicone polymer contains a photo acid generator which will decompose to generate an acid upon exposure to radiation. The silicone polymer includes hydroxybenzyl units wherein some OH groups are replaced by t-butoxycarbonyl, t-butoxycarbonylmethyl, trimethylsilyl or tetrahydropyranyl groups. In a first form, the photo acid generator is a specific onium salt having at least one phenyl group with a t-alkoxy, t-butoxycarbonyloxy or t-butoxycarbonylmethoxy substituent. In a second form, the composition further contains a nitrogenous compound. In a third form, the composition further contains a dissolution inhibitor in the form of a specific silicone compound. The composition is sensitive to high energy radiation and has high sensitivity and resolution.
摘要翻译： 基于有机硅聚合物的正型抗蚀剂组合物含有光致酸产生剂，其将在暴露于辐射时分解产生酸。 有机硅聚合物包括其中一些OH基被叔丁氧基羰基，叔丁氧基羰基甲基，三甲基甲硅烷基或四氢吡喃基代替的羟基苄基单元。 在第一种形式中，光酸产生剂是具有至少一个具有叔烷氧基，叔丁氧基羰基氧基或叔丁氧基羰基甲氧基取代基的苯基的特定鎓盐。 在第二种形式中，组合物还含有含氮化合物。 在第三种形式中，组合物还含有特定硅氧烷化合物形式的溶解抑制剂。 该成分对高能辐射敏感，灵敏度高，分辨率高。
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