公开(公告)号：US5685907A

公开(公告)日：1997-11-11

申请号：US586825

申请日：1996-01-31

申请人： Takao Fujikawa ,  Katsuhiro Uehara ,  Yoshihiko Sakashita ,  Kazuya Suzuki ,  Hiroshi Okada ,  Takao Kawanaka ,  Seiichiro Ohmoto

发明人： Takao Fujikawa ,  Katsuhiro Uehara ,  Yoshihiko Sakashita ,  Kazuya Suzuki ,  Hiroshi Okada ,  Takao Kawanaka ,  Seiichiro Ohmoto

IPC分类号： C30B11/00 ,  C30B35/00

CPC分类号： C30B11/00 ,  C30B29/48 ,  Y10T117/102

摘要： A method and apparatus for the preparation of single crystals of group II-VI compounds such as ZnSe and CdTe and group III-V compounds such as InP and GaP or of ternary compounds thereof, from which some of their components are likely to be dissociated and evaporated during crystal growth at high temperatures. Single crystals are prepared which enable the preparation of high quality compound single crystals and prevent the contamination of furnace structures. The method includes melting a source material in a container by heating in a furnace body and solidifying the melt by cooling from the bottom to grow a single crystal. The container is enclosed by an airtight chamber communicating to the outside with a pressure equalizing passage. Heating is performed while the passage is held at a low temperature equal to or lower than the melting point of a high-dissociation-pressure component of the source material. The apparatus includes a container for holding the source material, a hermetical furnace body including a heater to heat the container, an airtight chamber inside the heater which encloses the container and a pressure equalizing passage communicating with the airtight chamber and forming a lower portion of the chamber.

摘要翻译： PCT No.PCT / JP95 / 01069 Sec。 371日期1996年1月31日 102（e）日期1996年1月31日PCT归档1995年6月1日PCT公布。 WO95 / 33873 PCT出版物 日期：1995年12月14日一种用于制备诸如ZnSe和CdTe的II-VI族化合物的单晶和InP和GaP的III-V族化合物或其三元化合物的方法和装置，其一些组分为 在高温下晶体生长期间可能会被解离和蒸发。 制备单晶，其可制备高质量的复合单晶并防止炉结构的污染。 该方法包括通过在炉体中加热熔化容器中的源材料并通过从底部冷却来固化熔体以生长单晶。 容器由与压力平衡通道连通的气密室封闭。 当通道保持在等于或低于源材料的高解离压分量的熔点的低温时进行加热。 该装置包括用于保持源材料的容器，包括用于加热容器的加热器的密封炉体，包围容器的加热器内的气密室和与气密室连通的压力平衡通道，并形成 房间。

公开(公告)号：US5679151A

公开(公告)日：1997-10-21

申请号：US604663

申请日：1996-02-21

申请人： Seiichiro Ohmoto ,  Katsuhiro Uehara ,  Hiroshi Okada ,  Yoshihiko Sakashita ,  Takao Kawanaka

发明人： Seiichiro Ohmoto ,  Katsuhiro Uehara ,  Hiroshi Okada ,  Yoshihiko Sakashita ,  Takao Kawanaka

IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B11/12

CPC分类号： C30B11/00 ,  C30B15/00 ,  C30B29/48 ,  Y10T117/1016 ,  Y10T117/1024

摘要： Method of forming a single crystal of ZnSe. A charge of material is loaded in a container. The charge of material is melted to create a melt of material. A single crystal is grown from the melt of material. Then, the grown crystal is brought out of contact with the wall surface of the container. The temperature of the crystal is varied across its phase transition temperature range while establishing a temperature gradient from one end of the grown crystal to the other end. This method is carried out, using a crystal grower comprising the container and an elevation member. The container is disposed inside a high-pressure vessel. The container tapers off downward and is provided with a hole extending from its lower end. The elevation member is inserted into the hole from below to push the grown crystal in a crucible upward. The container is composed of plural separable parts. After the growth of the crystal, the assembled parts are moved substantially horizontally outwardly so that the parts are separated from each other.

摘要翻译： 形成ZnSe单晶的方法。 物料装入容器中。 材料的充电被熔化以产生材料熔体。 从材料的熔体中生长单晶。 然后，将生长的晶体与容器的壁表面脱离接触。 晶体的温度在其相变温度范围内变化，同时建立从生长晶体的一端到另一端的温度梯度。 使用包括容器和升降构件的结晶器进行该方法。 容器设置在高压容器内。 容器向下逐渐变细并且设有从其下端延伸的孔。 升降构件从下方插入孔中，将生长的晶体向上推入坩埚中。 容器由多个可分离部分组成。 在晶体生长之后，组装的部件基本上水平地向外移动，使得部件彼此分离。

公开(公告)号：US5698029A

公开(公告)日：1997-12-16

申请号：US659013

申请日：1996-06-04

申请人： Takao Fujikawa ,  Katsuhiro Uehara ,  Yoshihiko Sakashita ,  Hiroshi Okada ,  Takao Kawanaka

发明人： Takao Fujikawa ,  Katsuhiro Uehara ,  Yoshihiko Sakashita ,  Hiroshi Okada ,  Takao Kawanaka

IPC分类号： C30B11/00 ,  C30B35/00

CPC分类号： C30B11/003 ,  C30B11/002 ,  C30B29/40 ,  Y10T117/10 ,  Y10T117/1016

摘要： A high-pressure container 1 as a furnace casing is equipped with insulating cylinder 2 of an inverted glass shape, and heater elements 18 individually mounted on heater mounting plates 16 arranged in parallel to section vertically the space for arranging the heater elements 18 at a given interval in the insulating cylinder 2. For the procedures of single crystal growth by heating in a high-pressure gas atmosphere, the insulating cylinder 2 and the heater mounting plates 16 can suppress the effects of spontaneous convection of a high-pressure gas and the effects of the radiation heat from an adjacent heater element, as less as possible, so that the temperature controllability of each heating zone can be improved whereby the vertical temperature distribution in the furnace can be controlled appropriately. Also, a heater element 18 of a larger aperture size can be maintained at a stably supported state, whereby a single crystal of a larger dimension can be grown.

摘要翻译： 作为炉壳的高压容器1配备有倒置玻璃形状的绝缘筒体2和加热器元件18，其单独地安装在加热器安装板16上，该加热器安装板16垂直地布置在用于将加热器元件18布置在给定的空间 绝缘筒2的间隔。对于通过在高压气体气氛中加热而实现单晶生长的步骤，绝缘筒2和加热器安装板16可以抑制高压气体的自发对流的效果和效果 的相邻加热器元件的辐射热量越少越好，从而可以提高每个加热区域的温度可控性，从而可以适当地控制炉内的垂直温度分布。 此外，可以将较大孔径的加热器元件18保持在稳定的支撑状态，从而可以生长更大尺寸的单晶。

公开(公告)号：US5445776A

公开(公告)日：1995-08-29

申请号：US814806

申请日：1991-12-31

申请人： Katuhiko Honma ,  Tsuneo Tatsuno ,  Hiroshi Okada ,  Masato Moritoki ,  Takao Fujikawa

发明人： Katuhiko Honma ,  Tsuneo Tatsuno ,  Hiroshi Okada ,  Masato Moritoki ,  Takao Fujikawa

IPC分类号： C04B35/593 ,  C04B35/58

CPC分类号： C04B35/593 ,  C04B35/5935

摘要： The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4, above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.

摘要翻译： 该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。 在第一步骤中，氮化硅粉末被压制成所需的形状。 通常在常压下第二步骤中预烧结，得到相对密度至少为92％的预烧结体。 在第三步骤中，在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下对预烧结体进行热等静压（HIP）。 由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。

公开(公告)号：US5665291A

公开(公告)日：1997-09-09

申请号：US463273

申请日：1995-06-05

申请人： Katuhiko Honma ,  Tsuneo Tatsuno ,  Hiroshi Okada ,  Masato Moritoki ,  Takao Fujikawa

发明人： Katuhiko Honma ,  Tsuneo Tatsuno ,  Hiroshi Okada ,  Masato Moritoki ,  Takao Fujikawa

IPC分类号： C04B35/593 ,  C04B35/584

CPC分类号： C04B35/593 ,  C04B35/5935

摘要： The specification describes a method for producing high density sintered silicon nitride (Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then pre-sintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing (HIP) in an inert gas atmosphere of 1500.degree.-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 --Al.sub.2 O.sub.3 --MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.

摘要翻译： 该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。 在第一步骤中，氮化硅粉末被压制成所需的形状。 通常在常压下在第二步骤中预烧结，得到相对密度至少为92％的预烧结体。 在第三步骤中，将预烧结体在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下进行热等静压（HIP）。 由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。

公开(公告)号：US5603876A

公开(公告)日：1997-02-18

申请号：US251052

申请日：1988-09-26

申请人： Katuhiko Honma ,  Tsuneo Tatsuno ,  Hiroshi Okada ,  Masato Moritoki ,  Takao Fujikawa

发明人： Katuhiko Honma ,  Tsuneo Tatsuno ,  Hiroshi Okada ,  Masato Moritoki ,  Takao Fujikawa

IPC分类号： C04B35/593 ,  C04B35/584

CPC分类号： C04B35/593 ,  C04B35/5935

摘要： The specification describes a method for producing high density sintered silicon nitride(Si.sub.3 N.sub.4) having a relative density of at least 98%. In a first step, silicon nitride powder is compacted into a desired shape. It is then presintered in a second step, generally, under normal pressure to obtain a presintered body having a relative density of at least 92%. In a third step, the presintered body is subjected to a hot isostatic pressing(HIP) in an inert gas atmosphere of 1500-2100.degree. C. and of nitrogen gas partial pressure of at least 500 atm. Since the presintering does not require any capsule, it is possible to produce high density sintered Si.sub.3 N.sub.4 of complex configurations. As a sintering aid, Y.sub.2 O.sub.3 -Al.sub.2 O.sub.3 -MgO system sintering aid is particularly effective. To improve the strength of sintered Si.sub.3 N.sub.4, it is effective to add a heat treatment step after the HIP and maintain the temperature of the sintered Si.sub.3 N.sub.4 above 500.degree. C. for a while. Between the second and third steps, the temperature of the presintered body is preferably maintained above 500.degree. C. These temperature controls are effective not only to improve the strength of sintered Si.sub.3 N.sub.4 but also to save the thermal energy and to shorten the production cycle.

摘要翻译： 该说明书描述了一种生产相对密度至少为98％的高密度烧结氮化硅（Si3N4）的方法。 在第一步骤中，氮化硅粉末被压制成所需的形状。 通常在常压下第二步骤中预烧结，得到相对密度至少为92％的预烧结体。 在第三步骤中，在1500-2100℃的惰性气体气氛和至少500atm的氮气分压下对预烧结体进行热等静压（HIP）。 由于预烧结不需要任何胶囊，因此可以生产复合结构的高密度烧结Si 3 N 4。 作为烧结助剂，Y2O3-Al2O3-MgO体系的烧结助剂特别有效。 为了提高烧结Si3N4的强度，在HIP之后添加热处理步骤并将烧结的Si 3 N 4的温度保持在500℃以上一段时间是有效的。 在第二和第三步骤之间，预烧结体的温度优选保持在500℃以上。这些温度控制不仅有效地提高了烧结Si 3 N 4的强度，而且有效地节约了热能并缩短了生产周期。

公开(公告)号：US08476894B2

公开(公告)日：2013-07-02

申请号：US12801051

申请日：2010-05-19

申请人： Hiroshi Okada

发明人： Hiroshi Okada

IPC分类号： G01R31/00

CPC分类号： G01R19/0092

摘要： A monitoring circuit of the present invention provides a monitor signal with which a magnitude of a current flowing across a photodetector, such as a photodiode, can be calculated accurately over a wide temperature range on the basis of a value of the monitor signal. The monitoring circuit of the present invention includes: a current mirror circuit for outputting a monitor current proportional to an input current, the current mirror circuit having an input point for receiving the input current, the input point being connected to a photodetector and a load resistor, which are connected thereto in parallel; and an output circuit for outputting a monitor signal indicating a difference between a monitor electric potential proportional to the monitor current, and an offset electric potential proportional to an offset current which flows across the load resistor concurrently with the monitor current.

摘要翻译： 本发明的监视电路提供一种监视信号，通过该监视信号，可以根据监视信号的值，在宽的温度范围内精确地计算流过光电探测器（例如光电二极管）的电流大小。 本发明的监视电路包括：电流镜电路，用于输出与输入电流成比例的监视电流，电流镜电路具有用于接收输入电流的输入点，输入点连接到光电检测器和负载电阻器 ，其并联连接; 以及输出电路，用于输出指示与监视电流成比例的监视电位之间的差异的监视信号和与监视电流同时流过负载电阻的偏移电流成比例的偏移电位。

公开(公告)号：US08367033B2

公开(公告)日：2013-02-05

申请号：US12297728

申请日：2007-04-20

申请人： Hiroshi Okada ,  Yoshinori Sibata ,  Kuniyoshi Yokoo ,  Yuzo Mizobuchi ,  Kenji Omote ,  Yasuhiko Kasama

发明人： Hiroshi Okada ,  Yoshinori Sibata ,  Kuniyoshi Yokoo ,  Yuzo Mizobuchi ,  Kenji Omote ,  Yasuhiko Kasama

IPC分类号： C01B31/02

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/15 ,  C01B32/152

摘要： In order to isolate and purify an endohedral fullerene, a solvent washing was performed using toluene to concentrate the endohedral fullerene in a residual, but endohedral fullerene could not be efficiently purified because impurities other than the endohedral fullerene could not be sufficiently removed. Thus, the endohedral fullerene is isolated and purified by using a solvent such as chloronaphthalene or tetralin having a high solubility for the endohedral fullerene and concentrating the endohedral fullerene in the solvent. The endohedral fullerene isolated and purified by solvent extraction has a cluster structure where the endohedral fullerene is surrounded with empty fullerenes. Thus, this endohedral fullerene is highly stable and is a useful material applicable to various fields such as medical care and electronics.

摘要翻译： 为了分离和纯化内生的富勒烯，使用甲苯进行溶剂洗涤，以将内嵌的富勒烯浓缩在残留物中，但是由于内部富勒烯以外的杂质不能被充分除去，因此不能有效地纯化内生的富勒烯。 因此，内嵌式富勒烯通过使用对内嵌式富勒烯具有高溶解度的溶剂如氯萘或四氢化萘并将内面富勒烯浓缩在溶剂中来分离和纯化。 通过溶剂萃取分离和纯化的内嵌富勒烯具有簇结构，其中内部富勒烯被空的富勒烯包围。 因此，该内嵌式富勒烯是高度稳定的，并且是适用于医疗和电子等各个领域的有用材料。

公开(公告)号：US08058642B2

公开(公告)日：2011-11-15

申请号：US12443575

申请日：2008-07-18

申请人： Yasuhiro Iguchi ,  Hiroshi Okada ,  Yuichi Kawamura

发明人： Yasuhiro Iguchi ,  Hiroshi Okada ,  Yuichi Kawamura

IPC分类号： H01L31/0352

CPC分类号： H01L31/035236 ,  B82Y20/00 ,  H01L27/14649 ,  H01L31/03046 ,  Y02E10/544

摘要： A light-receiving element device capable of receiving near infrared to mid-infrared light of 1.7 μm-3.5 μm is provided. A substrate is formed of InP, and a superlattice light-receiving layer is formed of a superlattice of a type 2 junction formed by alternately being stacked a falling layer of a Group III-V compound semiconductor including In, Ga, As, N and a rising layer of a Group III-V compound semiconductor including Ga, As, Sb. The film thickness of the falling layer and the rising layer is each 3 nm-10 nm. The entire thickness of the superlattice light-receiving layer is 2 μm-7 μm. The lattice mismatch of the constituent film of the superlattice light-receiving layer to InP is ±0.2% or less.

摘要翻译： 提供能够接收1.7μm〜3.5μm的近红外到中红外光的受光元件装置。 基板由InP形成，超晶格光接收层由通过交替堆叠包括In，Ga，As，N的III-V族化合物半导体的下降层形成的2型结的超晶格形成，并且 包含Ga，As，Sb的III-V族化合物半导体的上升层。 下降层和上升层的膜厚分别为3nm〜10nm。 超晶格光接收层的整个厚度为2μm-7μm。 超晶格光接收层的构成膜与InP的晶格失配为±0.2％以下。

公开(公告)号：US08008948B2

公开(公告)日：2011-08-30

申请号：US12000304

申请日：2007-12-11

申请人： Yasuaki Makino ,  Hiroshi Okada ,  Reiji Iwamoto ,  Nobukazu Oba ,  Shinji Nakatani ,  Norikazu Ohta ,  Hideki Hosokawa

发明人： Yasuaki Makino ,  Hiroshi Okada ,  Reiji Iwamoto ,  Nobukazu Oba ,  Shinji Nakatani ,  Norikazu Ohta ,  Hideki Hosokawa

IPC分类号： G01R19/00 ,  G06M1/10

CPC分类号： G01R19/04

摘要： A peak voltage detector circuit detects a peak voltage of an input voltage. The input voltage is input into a first input terminal of a comparator. A counter circuit counts up a counter value in synchronization with a first clock signal, when a signal output from the comparator is in a first state. The counter circuit counts down the counter value in synchronization with a second clock signal. A digital-analog conversion circuit outputs an output voltage corresponding to the counter value, and the output voltage is input into a second input terminal of the comparator. The first clock signal has a wave period shorter than that of the second clock signal.

摘要翻译： 峰值电压检测电路检测输入电压的峰值电压。 输入电压被输入到比较器的第一输入端。 当从比较器输出的信号处于第一状态时，计数器电路与第一时钟信号同步地计数计数器值。 计数器电路与第二个时钟信号同步地计数计数器值。 数字模拟转换电路输出对应于计数器值的输出电压，输出电压被输入到比较器的第二输入端。 第一时钟信号具有比第二时钟信号短的波周期。