公开(公告)号：US4638109A

公开(公告)日：1987-01-20

申请号：US731276

申请日：1985-05-07

申请人： Takashi Ishihara ,  Kazuhiro Okaniwa ,  Genshiro Nakamura

发明人： Takashi Ishihara ,  Kazuhiro Okaniwa ,  Genshiro Nakamura

IPC分类号： H01L25/16 ,  H01L31/042 ,  H01L31/075 ,  H01L31/076 ,  H01L31/06 ,  H01L27/14

CPC分类号： H01L31/076 ,  H01L31/0443 ,  H01L31/0504 ,  H01L31/075 ,  H01L2224/48091 ,  H01L2224/49109 ,  Y02E10/548

摘要： A sun light electricity generator comprising an amorphous sun light battery, which comprises: a conductive substrate which also constitutes an output electrode; amorphous semiconductor layers provided on the substrate, said layers constituting a p-i-n junction structure for a sun battery element and for a protection diode; an electrode for the sun battery element and an electrode for the protection diode, both provided on the light incident amorphous layer but separated from each other; and an electrode for connection to another generator provided on a region of the substrate where the amorphous layers are not provided.

摘要翻译： 一种太阳光发电机，包括非晶太阳能电池，其包括：也构成输出电极的导电基板; 设置在基板上的非晶半导体层，所述层构成太阳电池元件和保护二极管的p-i-n结结构; 太阳能电池元件的电极和用于保护二极管的电极都设置在光入射非晶层上但彼此分离; 以及用于与设置在不设置非晶层的基板的区域上的另一发生器连接的电极。

公开(公告)号：US5221221A

公开(公告)日：1993-06-22

申请号：US644996

申请日：1991-01-22

申请人： Kazuhiro Okaniwa

发明人： Kazuhiro Okaniwa

IPC分类号： H01J9/02

CPC分类号： H01J9/025

摘要： A process for fabricating an electron emitting vacuum type device having a tipped electron emitter supported on a substrate and disposed in a vacuum for emitting electrons. The process utilizes a substrate having opposed substantially planar front and rear surfaces. The front surface, carrying a series of conical depressions, is plated with a metallic layer of electron emitting material which lines the apertures to form metallic structures having tips buried in the substrate. A first material removal process, comprising grinding, is performed on the rear of the substrate to remove the bulk of the substrate but leaving the tips protected within the substrate. A second operation comprising a finishing operation is then applied to the rear surface to advance the plane of the rear surface from an as-ground to an as-finished position. The finishing operation employs a wet etching solution, and may employ mechanical friction (free of abrasive particles) to assist the speed of etching and uniformity of the finished surface. The as-finished plane of the surface serves to expose the metallic tips so that they can serve as emitters in a vacuum tube device.

摘要翻译： 一种用于制造电子发射真空型器件的方法，其具有支撑在衬底上的尖端电子发射器，并且设置在用于发射电子的真空中。 该方法利用具有相对的基本平坦的前表面和后表面的基底。 带有一系列锥形凹陷的前表面镀有金属层的电子发射材料，其中电子发射材料线形成孔，以形成具有掩埋在基底中的尖端的金属结构。 在衬底的后部执行包括研磨的第一材料去除工艺，以去除衬底的大部分，但是将衬垫保护在衬底内。 然后将包括精加工操作的第二操作施加到后表面，以将后表面的平面从地面推进到最终位置。 精加工操作采用湿蚀刻溶液，并且可以采用机械摩擦（不含磨料颗粒）来帮助蚀刻速度和成品表面的均匀性。 表面的最终平面用于暴露金属尖端，使得它们可以用作真空管装置中的发射器。

公开(公告)号：US5438212A

公开(公告)日：1995-08-01

申请号：US201224

申请日：1994-02-24

申请人： Kazuhiro Okaniwa

发明人： Kazuhiro Okaniwa

IPC分类号： H01L21/306 ,  H01L21/338 ,  H01L23/34 ,  H01L23/367 ,  H01L23/48 ,  H01L23/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/812 ,  H01L29/40 ,  H01L29/423 ,  H01L29/772

CPC分类号： H01L29/4175 ,  H01L23/34 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/66 ,  H01L29/0657 ,  H01L29/1075 ,  H01L29/41758 ,  H01L2224/29144 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/10158

摘要： A semiconductor device includes a heat generating element disposed on a front surface of a semiconductor substrate and a cavity disposed within the semiconductor substrate opposite the heat generating element. In this structure, heat generated by the heat generating element is conducted through the substrate to the cavity, whereby the thermal conductivity of the device is improved. In a method for producing the semiconductor device, portions of the substrate at opposite sides of the heat generating element are selectively etched in a direction perpendicular to the front surface to form first holes (first etching process). Thereafter, the substrate is selectively etched from the front surface to form second holes beneath the respective first holes (second etching process). During the second etching process, the second holes are connected to each other, resulting in the cavity for heat radiation.

摘要翻译： 半导体器件包括设置在半导体衬底的前表面上的发热元件和设置在与发热元件相对的半导体衬底内的空腔。 在该结构中，由发热元件产生的热量通过基板传导到空腔，从而提高了器件的导热性。 在制造半导体器件的方法中，在垂直于前表面的方向上选择性地蚀刻发热元件相对两侧的基片部分，以形成第一孔（第一蚀刻工艺）。 此后，从前表面选择性地蚀刻衬底，以在相应的第一孔下方形成第二孔（第二蚀刻工艺）。 在第二蚀刻工艺期间，第二孔彼此连接，导致用于热辐射的空腔。

公开(公告)号：US5800665A

公开(公告)日：1998-09-01

申请号：US589084

申请日：1996-01-23

申请人： Kazuhiro Okaniwa ,  Iwao Hayase

发明人： Kazuhiro Okaniwa ,  Iwao Hayase

IPC分类号： C09J5/00 ,  B23Q3/08 ,  B32B43/00 ,  C09J191/06 ,  C09J193/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  B32B31/00

CPC分类号： B32B43/00 ,  H01L21/67017 ,  Y10S134/902 ,  Y10S156/93 ,  Y10T156/11 ,  Y10T156/19 ,  Y10T29/49819 ,  Y10T29/49822

摘要： A method of fabricating a semiconductor device includes preparing a semiconductor substrate having a surface and a mechanical strength; adhering a reinforcing plate to the surface of the semiconductor substrate with an adhesive to increase the mechanical strength of the semiconductor substrate and processing the semiconductor substrate; and immersing the semiconductor substrate with the reinforcing plate in a heated solvent to melt and dissolve the adhesive, thereby separating the semiconductor substrate from the reinforcing plate. An apparatus for performing the methods includes a holder for holding the semiconductor substrate with the reinforcing plate; a container for accommodating the holder and for containing a solvent that dissolves the adhesive and a heater for heating the solvent. When the adhesive between the semiconductor substrate and the reinforcing plate is sufficiently dissolved by the solvent, the semiconductor substrate is separated from the reinforcing plate. Therefore, no force is applied to the semiconductor substrate in the direction perpendicular to the surface of the semiconductor substrate, so that unwanted damage of the semiconductor substrate, such as cracking, is avoided.

摘要翻译： 制造半导体器件的方法包括制备具有表面和机械强度的半导体衬底; 用粘合剂将增强板粘附到半导体衬底的表面，以增加半导体衬底的机械强度并处理半导体衬底; 并将具有加强板的半导体衬底浸入加热溶剂中以熔化并溶解粘合剂，从而将半导体衬底与增强板分离。 一种用于执行该方法的装置包括用于将半导体衬底保持在加强板上的保持器; 用于容纳保持器并容纳溶解粘合剂的溶剂的容器和用于加热溶剂的加热器。 当半导体衬底和加强板之间的粘合剂被溶剂充分溶解时，半导体衬底与加强板分离。 因此，在与半导体衬底的表面垂直的方向上不对半导体衬底施加力，因此避免了半导体衬底的不必要的损坏，例如破裂。

公开(公告)号：US5770513A

公开(公告)日：1998-06-23

申请号：US433528

申请日：1995-05-02

申请人： Kazuhiro Okaniwa

发明人： Kazuhiro Okaniwa

IPC分类号： H01L21/306 ,  H01L21/338 ,  H01L23/34 ,  H01L23/367 ,  H01L23/48 ,  H01L23/66 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/812 ,  H01L21/3205

CPC分类号： H01L29/4175 ,  H01L23/34 ,  H01L23/3677 ,  H01L23/481 ,  H01L23/66 ,  H01L29/0657 ,  H01L29/1075 ,  H01L29/41758 ,  H01L2224/29144 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/10158

摘要： A semiconductor device includes a heat generating element disposed on a front surface of a semiconductor substrate and a cavity disposed within the semiconductor substrate opposite the heat generating element. In this structure, heat generated by the heat generating element is conducted through the substrate to the cavity, whereby the thermal conductivity of the device is improved. In a method for producing the semiconductor device, portions of the substrate at opposite sides of the heat generating element are selectively etched in a direction perpendicular to the front surface to form first holes (first etching process). Thereafter, the substrate is selectively etched from the front surface to form second holes beneath the respective first holes (second etching process). During the second etching process, the second holes are connected to each other, resulting in the cavity for heat radiation.

摘要翻译： 半导体器件包括设置在半导体衬底的前表面上的发热元件和设置在与发热元件相对的半导体衬底内的空腔。 在该结构中，由发热元件产生的热量通过基板传导到空腔，从而提高了器件的导热性。 在制造半导体器件的方法中，在垂直于前表面的方向上选择性地蚀刻发热元件相对两侧的基片部分，以形成第一孔（第一蚀刻工艺）。 此后，从前表面选择性地蚀刻衬底，以在相应的第一孔下方形成第二孔（第二蚀刻工艺）。 在第二蚀刻工艺期间，第二孔彼此连接，导致用于热辐射的空腔。