公开(公告)号：US4398040A

公开(公告)日：1983-08-09

申请号：US388234

申请日：1982-06-14

申请人： Takashi Suzuki ,  Koichi Kitahara ,  Susumu Naito ,  Tomoji Tsuji

发明人： Takashi Suzuki ,  Koichi Kitahara ,  Susumu Naito ,  Tomoji Tsuji

IPC分类号： B01J23/00 ,  C07B61/00 ,  C07C51/00 ,  C07C51/265 ,  C07C63/307 ,  C07C67/00 ,  C07C51/16

CPC分类号： C07C51/265

摘要： Trimellitic acid is produced in higher yield by liquid phase air oxidation of pseudocumene in acetic acid as a solvent in the presence of cobalt, manganese, and bromine as a catalyst, where the oxidation is carried out at two stages comprising a first stage of reaction at a temperature of 110.degree. to 170.degree. C. and a second stage of reaction at a temperature of 180.degree. to 240.degree. C. while maintaining a reaction pressure under a condition of the following formula throughout the reaction:1.20 Psolv.ltoreq.P.ltoreq.2.20 Psolvwherein P represents a reaction pressure as absolute pressure and Psolv represents a total vapor pressure of acetic acid and water present in a reaction system at a given reaction temperature.

摘要翻译： 在钴，锰和溴作为催化剂的存在下，在乙酸作为溶剂中的假枯烯的液相空气氧化产生偏苯三酸，其中氧化在两个阶段进行，包括第一阶段的反应 温度为110〜170℃，在180〜240℃的温度下进行第二阶段反应，同时在整个反应条件下保持反应压力为下列公式：1.20 Psolv < / = 2.20 Psolv其中P表示作为绝对压力的反应压力，Psolv表示在给定反应温度下反应体系中存在的乙酸和水的总蒸气压。

公开(公告)号：US4948748A

公开(公告)日：1990-08-14

申请号：US396792

申请日：1989-08-21

申请人： Koichi Kitahara ,  Yu Ohata ,  Tsuyoshi Kuramoto

发明人： Koichi Kitahara ,  Yu Ohata ,  Tsuyoshi Kuramoto

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L27/088 ,  H01L27/12

CPC分类号： H01L21/76294 ,  H01L21/2007 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76278 ,  H01L21/76286 ,  H01L27/088 ,  H01L2924/0002 ,  Y10S148/012 ,  Y10S148/135

摘要： A substrate structure for a composite semiconductor device comprises first and second semiconductor substrates whose major surfaces are bonded to each other with an insulating layer interposed therebetween. In this substrate structure, an epitaxial layer is grown from part of the second semiconductor substrate, forming one element area, and another element area is formed in the first semiconductor substrate area and isolated from the epitaxial layer.

摘要翻译： 用于复合半导体器件的衬底结构包括其主表面彼此接合的第一和第二半导体衬底，其间插入有绝缘层。 在该衬底结构中，从第二半导体衬底的一部分生长外延层，形成一个元件区域，并且在第一半导体衬底区域中形成另一个元件区域并与外延层隔离。

公开(公告)号：US5670445A

公开(公告)日：1997-09-23

申请号：US409031

申请日：1995-03-23

申请人： Koichi Kitahara ,  Kenji Otsuka ,  Toshiya Hatakeyama ,  Hideki Fukuda

发明人： Koichi Kitahara ,  Kenji Otsuka ,  Toshiya Hatakeyama ,  Hideki Fukuda

IPC分类号： B01D53/34 ,  B01D53/40 ,  B01D53/68 ,  B01J20/02 ,  B01J23/40 ,  B01J23/42 ,  B01J23/58

CPC分类号： B01D53/40 ,  B01D53/68

摘要： A cleaning agent for removing acidic gases which are harmful materials from a harmful gas containing such acidic gases, and a cleaning method using the cleaning agent are disclosed. The cleaning agent comprises a molded product of a composition comprising strontium hydroxide and an iron oxide, and the harmful gas is passed through a cleaning column packed with the cleaning agent to contact the harmful gas with the cleaning agent, thereby removing the acidic gases from the harmful gas.

摘要翻译： 公开了一种用于从含有这种酸性气体的有害气体中除去作为有害物质的酸性气体的清洁剂和使用该清洁剂的清洁方法。 清洗剂包括由氢氧化锶和氧化铁组成的组合物的成型体，有害气体通过填充有清洗剂的清洗柱，以将有害气体与清洗剂接触，从而将酸性气体从 有害气体。

公开(公告)号：US4985745A

公开(公告)日：1991-01-15

申请号：US293026

申请日：1989-01-03

申请人： Koichi Kitahara ,  Yoshinori Natsume ,  Yoshinori Hosoki

发明人： Koichi Kitahara ,  Yoshinori Natsume ,  Yoshinori Hosoki

IPC分类号： H01L27/06 ,  H01L21/762 ,  H01L21/8249

CPC分类号： H01L21/762 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76286

摘要： The main surface of a first semiconductor substrate is bonded to the main surface of a second semiconductor substrate with an insulation film interposed therebetween to form a composite substrate. The first semiconductor substrate and insulation film are selectively etched to form an etched portion which reaches at least the second semiconductor substrate. An impurity layer with an impurity concentration different from that of the first semiconductor substrate is formed on or in the surface area exposed to the etched portion of the first and second semiconductor substrates. An epitaxial layer having an impurity concentration different from that of the impurity layer is formed in the etched portion. The first semiconductor substrate, impurity layer and epitaxial layer are planarized. The first semiconductor substrate, impurity layer and epitaxial layer are etched to make a pattern of the impurity layer on the surface of the composite substrate and the composite semiconductor substrate is aligned for formation of elements based on the pattern. The elements are formed in the composite substrate thus aligned.

公开(公告)号：US4910001A

公开(公告)日：1990-03-20

申请号：US238068

申请日：1988-08-30

申请人： Koichi Kitahara ,  Noboru Akita ,  Takashi Shimada ,  Kohhei Sasaki ,  Tadashi Hiramoto

发明人： Koichi Kitahara ,  Noboru Akita ,  Takashi Shimada ,  Kohhei Sasaki ,  Tadashi Hiramoto

IPC分类号： B01D53/46

CPC分类号： B01D53/46

摘要： A method for cleaning a gas containing at least one toxic component selected from the group consisting of arsine, phosphine, monosilane, diborane, and hydrogen selenide, which comprises contacting the gas with a cleaning agent containing a molded composition comprising (1) manganese dioxide and (2) cupric oxide, having deposited thereon (3) a silver compound, wherein the weight ratio of cupric oxide to manganese dioxide ranges from 0.2 to 1.2 and the amount of the deposited silver compound ranges from 0.01 to 10.5% by weight based on the cleaning agent. By the cleaning method, the toxic component can be removed from a gas, e.g., air, at high efficiency and at a high rate even in case of sudden leakage of the toxic component out of a bomb.

公开(公告)号：US5194233A

公开(公告)日：1993-03-16

申请号：US754462

申请日：1991-09-03

申请人： Koichi Kitahara ,  Kenji Ohtsuka ,  Noboru Takemasa ,  Shinobu Kamiyama

发明人： Koichi Kitahara ,  Kenji Ohtsuka ,  Noboru Takemasa ,  Shinobu Kamiyama

IPC分类号： B01D53/14 ,  B01D53/28 ,  B01J20/02 ,  C01B23/00 ,  C22C16/00 ,  C22C27/02

CPC分类号： C01B23/00

摘要： Highly purified rare gas (helium, neon, argon, krypton, xenon, etc.) is obtained by removing impurities contained therein, such as nitrogen, hydrocarbon, carbon monoxide, carbon dioxide, oxygen, hydrogen and water, at relatively low temperatures by the use of a getter. This getter is a two-component alloy of zirconium and vanadium, or a multi-component alloy containing, as well as zirconium and vanadium, at least one of chromium, nickel and cobalt.

公开(公告)号：USRE34025E

公开(公告)日：1992-08-11

申请号：US620536

申请日：1990-11-28

申请人： Yosuke Takagi ,  Yu Ohata ,  Koichi Kitahara ,  Tsuyoshi Kuramoto

发明人： Yosuke Takagi ,  Yu Ohata ,  Koichi Kitahara ,  Tsuyoshi Kuramoto

IPC分类号： H01L21/761 ,  H01L21/8249 ,  H01L27/06

CPC分类号： H01L21/8249 ,  H01L21/761 ,  H01L27/0623

摘要： A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.

公开(公告)号：US4976942A

公开(公告)日：1990-12-11

申请号：US412750

申请日：1989-09-26

申请人： Koichi Kitahara ,  Takashi Shimada ,  Keiichi Iwata ,  Noboru Akita

发明人： Koichi Kitahara ,  Takashi Shimada ,  Keiichi Iwata ,  Noboru Akita

IPC分类号： C01B6/34 ,  C01B19/00 ,  C01B19/04 ,  C01B25/06 ,  C01B25/08 ,  C01B33/04 ,  C01B33/06 ,  C01B35/04

CPC分类号： C01B35/04 ,  C01B19/007 ,  C01B19/04 ,  C01B25/06 ,  C01B25/08 ,  C01B33/046 ,  C01B33/06 ,  C01B6/34

摘要： A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material from nickel arsenides, nickel phosphides, nickel silicides, nickel selenides, or nickel borides to remove oxygen contained in the crude gaseous hydride.

公开(公告)号：US4879584A

公开(公告)日：1989-11-07

申请号：US154275

申请日：1988-02-10

申请人： Yosuke Takagi ,  Yu Ohata ,  Koichi Kitahara ,  Tsuyoshi Kuramoto

发明人： Yosuke Takagi ,  Yu Ohata ,  Koichi Kitahara ,  Tsuyoshi Kuramoto

IPC分类号： H01L21/76 ,  H01L21/8238 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/088 ,  H01L27/092 ,  H01L29/78

CPC分类号： H01L21/8249 ,  H01L27/0623 ,  H01L27/088

摘要： A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.

公开(公告)号：US5493148A

公开(公告)日：1996-02-20

申请号：US956466

申请日：1992-10-02

申请人： Yu Ohata ,  Koichi Kitahara ,  Yosuke Takagi

发明人： Yu Ohata ,  Koichi Kitahara ,  Yosuke Takagi

IPC分类号： H01L27/04 ,  H01C17/22 ,  H01L21/82 ,  H01L21/822 ,  H01L23/525 ,  H01L29/00

CPC分类号： H01C17/22 ,  H01L23/5256 ,  H01L2924/0002

摘要： A semiconductor device includes a resistor network having a plurality of trimming polysilicon resistors. The polysilicon resistors have the same width and different lengths and can be selectively fused according to the value of current which is caused to flow therein. The resultant resistance of the resistor network is changed by selectively fusing the polysilicon resistors. The output characteristic of the semiconductor device can be adjusted by changing the resultant resistance.

摘要翻译： 半导体器件包括具有多个微调多晶硅电阻器的电阻网络。 多晶硅电阻器具有相同的宽度和不同的长度，并且可以根据流过其中的电流的值选择性地熔化。 通过选择性地熔化多晶硅电阻来改变电阻网络的合成电阻。 可以通过改变所得到的电阻来调节半导体器件的输出特性。