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公开(公告)号：USRE34025E
公开(公告)日：1992-08-11
申请号：US620536
申请日：1990-11-28
申请人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
发明人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
IPC分类号： H01L21/761 , H01L21/8249 , H01L27/06
CPC分类号： H01L21/8249 , H01L21/761 , H01L27/0623
摘要： A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.
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2.发明授权
公开(公告)号：US4879584A
公开(公告)日：1989-11-07
申请号：US154275
申请日：1988-02-10
申请人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
发明人： Yosuke Takagi , Yu Ohata , Koichi Kitahara , Tsuyoshi Kuramoto
IPC分类号： H01L21/76 , H01L21/8238 , H01L21/8249 , H01L27/06 , H01L27/088 , H01L27/092 , H01L29/78
CPC分类号： H01L21/8249 , H01L27/0623 , H01L27/088
摘要： A semiconductor device is provided which has a power insulated-gate MOS field effect transistor and a control semiconductor element formed in a common semiconductor substrate. A first area corresponding to a drain region of low resistance in the power MOS field effect transistor is different in resistivity than a second area corresponding to the control semiconductor element. The electrical characteristics of each element integrated in the devices is substantially equal to the same element in discrete form.
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3.发明授权Semiconductor device whose output characteristic can be adjusted by functional trimming 失效输出特性可以通过功能修整来调整的半导体器件
公开(公告)号：US5493148A
公开(公告)日：1996-02-20
申请号：US956466
申请日：1992-10-02
申请人： Yu Ohata , Koichi Kitahara , Yosuke Takagi
发明人： Yu Ohata , Koichi Kitahara , Yosuke Takagi
IPC分类号： H01L27/04 , H01C17/22 , H01L21/82 , H01L21/822 , H01L23/525 , H01L29/00
CPC分类号： H01C17/22 , H01L23/5256 , H01L2924/0002
摘要： A semiconductor device includes a resistor network having a plurality of trimming polysilicon resistors. The polysilicon resistors have the same width and different lengths and can be selectively fused according to the value of current which is caused to flow therein. The resultant resistance of the resistor network is changed by selectively fusing the polysilicon resistors. The output characteristic of the semiconductor device can be adjusted by changing the resultant resistance.
摘要翻译： 半导体器件包括具有多个微调多晶硅电阻器的电阻网络。 多晶硅电阻器具有相同的宽度和不同的长度，并且可以根据流过其中的电流的值选择性地熔化。 通过选择性地熔化多晶硅电阻来改变电阻网络的合成电阻。 可以通过改变所得到的电阻来调节半导体器件的输出特性。
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4.发明授权Semiconductor device capable of previously evaluating characteristics of power output element 失效能够预先评估功率输出元件的特性的半导体器件
公开(公告)号：US5418383A
公开(公告)日：1995-05-23
申请号：US143060
申请日：1993-10-29
申请人： Yosuke Takagi , Yu Ohata , Koichi Kitahara
发明人： Yosuke Takagi , Yu Ohata , Koichi Kitahara
IPC分类号： H01L21/66 , H01L21/822 , H01L21/8234 , H01L27/02 , H01L27/04 , H01L27/088 , H01L23/58 , H01L23/62 , H01L29/76 , H01L29/94
CPC分类号： H01L27/0255 , H01L2924/0002
摘要： At least one power output element made of an insulated gate semiconductor element, a surge protection element for an input electrode of the power output element, and a circuit element block for controlling the power output element, are formed on the same semiconductor substrate. A predetermined electrode of the power output element and one end of the surge protection element are connected to each other. In this state, first, second, and third electrode wiring layers are connected to an output terminal of the circuit element block, the other end of the surge protection element, and the input electrode of the power output element, respectively, and the first to third electrode wiring layers are formed separately from one another. In order to connect the first to third electrode wiring layers to each other, a fourth electrode wiring layer is formed thereon. Thus, a characteristic of the power output element is previously evaluated before the fourth electrode wiring layer is formed, using at least the third electrode wiring layer.
摘要翻译： 在同一半导体基板上形成由绝缘栅极半导体元件构成的至少一个功率输出元件，用于输出功率输出元件的输入电极的浪涌保护元件和用于控制功率输出元件的电路元件块。 功率输出元件的预定电极和浪涌保护元件的一端彼此连接。 在这种状态下，第一，第二和第三电极布线层分别连接到电路元件块的输出端子，浪涌保护元件的另一端和功率输出元件的输入电极，第一至第 第三电极布线层彼此分开地形成。 为了将第一至第三电极布线层彼此连接，在其上形成第四电极布线层。 因此，在形成第四电极布线层之前，至少使用第三电极布线层，预先评估功率输出元件的特性。
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5.发明授权Manufacture of a substrate structure for a composite semiconductor device using wafer bonding and epitaxial refill 失效使用晶片接合和外延填充的复合半导体器件的衬底结构的制造
公开(公告)号：US4948748A
公开(公告)日：1990-08-14
申请号：US396792
申请日：1989-08-21
申请人： Koichi Kitahara , Yu Ohata , Tsuyoshi Kuramoto
发明人： Koichi Kitahara , Yu Ohata , Tsuyoshi Kuramoto
IPC分类号： H01L21/02 , H01L21/20 , H01L21/762 , H01L27/088 , H01L27/12
CPC分类号： H01L21/76294 , H01L21/2007 , H01L21/76264 , H01L21/76275 , H01L21/76278 , H01L21/76286 , H01L27/088 , H01L2924/0002 , Y10S148/012 , Y10S148/135
摘要： A substrate structure for a composite semiconductor device comprises first and second semiconductor substrates whose major surfaces are bonded to each other with an insulating layer interposed therebetween. In this substrate structure, an epitaxial layer is grown from part of the second semiconductor substrate, forming one element area, and another element area is formed in the first semiconductor substrate area and isolated from the epitaxial layer.
摘要翻译： 用于复合半导体器件的衬底结构包括其主表面彼此接合的第一和第二半导体衬底，其间插入有绝缘层。 在该衬底结构中，从第二半导体衬底的一部分生长外延层，形成一个元件区域，并且在第一半导体衬底区域中形成另一个元件区域并与外延层隔离。
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公开(公告)号：US5670445A
公开(公告)日：1997-09-23
申请号：US409031
申请日：1995-03-23
摘要： A cleaning agent for removing acidic gases which are harmful materials from a harmful gas containing such acidic gases, and a cleaning method using the cleaning agent are disclosed. The cleaning agent comprises a molded product of a composition comprising strontium hydroxide and an iron oxide, and the harmful gas is passed through a cleaning column packed with the cleaning agent to contact the harmful gas with the cleaning agent, thereby removing the acidic gases from the harmful gas.
摘要翻译： 公开了一种用于从含有这种酸性气体的有害气体中除去作为有害物质的酸性气体的清洁剂和使用该清洁剂的清洁方法。 清洗剂包括由氢氧化锶和氧化铁组成的组合物的成型体，有害气体通过填充有清洗剂的清洗柱，以将有害气体与清洗剂接触，从而将酸性气体从 有害气体。
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公开(公告)号：US4985745A
公开(公告)日：1991-01-15
申请号：US293026
申请日：1989-01-03
IPC分类号： H01L27/06 , H01L21/762 , H01L21/8249
CPC分类号： H01L21/762 , H01L21/76264 , H01L21/76275 , H01L21/76286
摘要： The main surface of a first semiconductor substrate is bonded to the main surface of a second semiconductor substrate with an insulation film interposed therebetween to form a composite substrate. The first semiconductor substrate and insulation film are selectively etched to form an etched portion which reaches at least the second semiconductor substrate. An impurity layer with an impurity concentration different from that of the first semiconductor substrate is formed on or in the surface area exposed to the etched portion of the first and second semiconductor substrates. An epitaxial layer having an impurity concentration different from that of the impurity layer is formed in the etched portion. The first semiconductor substrate, impurity layer and epitaxial layer are planarized. The first semiconductor substrate, impurity layer and epitaxial layer are etched to make a pattern of the impurity layer on the surface of the composite substrate and the composite semiconductor substrate is aligned for formation of elements based on the pattern. The elements are formed in the composite substrate thus aligned.
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公开(公告)号：US4910001A
公开(公告)日：1990-03-20
申请号：US238068
申请日：1988-08-30
IPC分类号： B01D53/46
CPC分类号： B01D53/46
摘要： A method for cleaning a gas containing at least one toxic component selected from the group consisting of arsine, phosphine, monosilane, diborane, and hydrogen selenide, which comprises contacting the gas with a cleaning agent containing a molded composition comprising (1) manganese dioxide and (2) cupric oxide, having deposited thereon (3) a silver compound, wherein the weight ratio of cupric oxide to manganese dioxide ranges from 0.2 to 1.2 and the amount of the deposited silver compound ranges from 0.01 to 10.5% by weight based on the cleaning agent. By the cleaning method, the toxic component can be removed from a gas, e.g., air, at high efficiency and at a high rate even in case of sudden leakage of the toxic component out of a bomb.
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公开(公告)号：US5194233A
公开(公告)日：1993-03-16
申请号：US754462
申请日：1991-09-03
CPC分类号： C01B23/00
摘要： Highly purified rare gas (helium, neon, argon, krypton, xenon, etc.) is obtained by removing impurities contained therein, such as nitrogen, hydrocarbon, carbon monoxide, carbon dioxide, oxygen, hydrogen and water, at relatively low temperatures by the use of a getter. This getter is a two-component alloy of zirconium and vanadium, or a multi-component alloy containing, as well as zirconium and vanadium, at least one of chromium, nickel and cobalt.
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公开(公告)号：US4976942A
公开(公告)日：1990-12-11
申请号：US412750
申请日：1989-09-26
申请人： Koichi Kitahara , Takashi Shimada , Keiichi Iwata , Noboru Akita
发明人： Koichi Kitahara , Takashi Shimada , Keiichi Iwata , Noboru Akita
IPC分类号： C01B6/34 , C01B19/00 , C01B19/04 , C01B25/06 , C01B25/08 , C01B33/04 , C01B33/06 , C01B35/04
CPC分类号： C01B35/04 , C01B19/007 , C01B19/04 , C01B25/06 , C01B25/08 , C01B33/046 , C01B33/06 , C01B6/34
摘要： A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material from nickel arsenides, nickel phosphides, nickel silicides, nickel selenides, or nickel borides to remove oxygen contained in the crude gaseous hydride.
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